公开(公告)号：USD647494S1

公开(公告)日：2011-10-25

申请号：US29385934

申请日：2011-02-23

申请人： Hsiang-Szu Chang ,  Nien-Tze Yeh ,  Kuen-Pu Lu ,  Chia-Hsun Chen

设计人： Hsiang-Szu Chang ,  Nien-Tze Yeh ,  Kuen-Pu Lu ,  Chia-Hsun Chen

公开(公告)号：US07598105B2

公开(公告)日：2009-10-06

申请号：US11963517

申请日：2007-12-21

申请人： Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

发明人： Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

摘要： The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

摘要翻译： 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以形成化学反应层。 接下来，蚀刻基板以形成具有化学反应层顶部的多个凹区域和多个凸区域。 接下来，去除化学反应层，以形成衬底表面上的凹区和凸区的不规则几何形状。 然后，在衬底的表面上外延形成半导体发光结构。 因此，本发明可以实现具有改善的内部和外部量子效率的发光二极管结构。

公开(公告)号：US07579202B2

公开(公告)日：2009-08-25

申请号：US11963580

申请日：2007-12-21

申请人： Wen-Chieh Hsu ,  Yu-Chuan Liu ,  Jenn-Hwa Fu ,  Shih-Hung Lee ,  Tai-Chun Wang

发明人： Wen-Chieh Hsu ,  Yu-Chuan Liu ,  Jenn-Hwa Fu ,  Shih-Hung Lee ,  Tai-Chun Wang

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L33/22 ,  Y10S438/945

摘要： The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.

摘要翻译： 本发明公开了一种用于制造发光二极管元件的方法，该方法结合了外延工艺和蚀刻工艺，以便从底部向下蚀刻LED外延层并形成侧突出结构，由此LED外延层具有非矩形倾斜， 解决全反射问题，提高光提取效率。 此外，本发明的方法具有简单的制造工艺，其可以有益于批量生产和降低成本。

公开(公告)号：US07335523B2

公开(公告)日：2008-02-26

申请号：US11339251

申请日：2006-01-25

申请人： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

发明人： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC分类号： H01L21/00

CPC分类号： H01L33/507 ,  H01L25/0756 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device comprising a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

摘要翻译： 一种发光装置，包括包括多个第一连接焊盘的发光单元，包括多个第二连接焊盘的基板，以及将所述发光单元的第一连接焊盘连接到所述发光单元的多个导电凸块 基底基板的第二连接焊盘。 在制造过程中，执行回流处理以将导电凸块接合到第一和第二连接焊盘。 发光单元被配置为在施加电流时发射第一光辐射，并且基底基板被配置为当被第一光辐射刺激时发射第二光辐射。

公开(公告)号：US07253061B2

公开(公告)日：2007-08-07

申请号：US11005193

申请日：2004-12-06

申请人： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

发明人： Lung-Han Peng ,  Han-Ming Wu ,  Jing-Yi Lin

IPC分类号： H01L21/336

CPC分类号： H01L21/02241 ,  H01L21/02258 ,  H01L21/02337 ,  H01L21/3143 ,  H01L21/31679 ,  H01L29/78681

摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

摘要翻译： 在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓 并进行快速热退火处理。 光辅助电化学方法在约5.5和7.5之间的pH下使用包括缓冲CH 3 COOH的电解质浴。 快速热退火工艺在O 2 O 2环境中在约500℃至800℃的温度下进行。

公开(公告)号：US20030211645A1

公开(公告)日：2003-11-13

申请号：US10410989

申请日：2003-04-08

申请人： Tekcore Co., Ltd.

发明人： Chia-Ming Lee ,  Jen-Inn Chyi

IPC分类号： H01L021/00

CPC分类号： H01L33/025 ,  H01L33/0016 ,  H01L33/02 ,  H01L33/14

摘要： According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an nnullnull layer disposed non-extensively and flush on one side of the n layer. Furthermore, a pnull layer is disposed co-extensively on the nnullnull layer of the LED according to the invention, with a p layer further disposed co-extensively on the pnull layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An nnull layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite nnullnull layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the nnull layer.

摘要翻译： 根据本发明的优选实施例，提供了一种新颖且最佳的半导体发光器件，其包括基底，共同设置在基底上的n层，非广泛地并且齐平地设置的n ++层 n层的一边。 此外，根据本发明，p +层被共同设置在LED的n ++层上，其中p层进一步同时设置在p +层上。 p包层共同设置在p层上。 多量子阱（MQW）层共同设置在p包覆层上，并且n包覆层进一步同时布置在MQW层上。 第n层被共同设置在n包层上。 根据本发明，n + +层共同地布置在LED的第二n层上。 在部分蚀刻该器件之后，在n层的表面上非广泛地形成n电极，n +电极在n +层上非广泛地（无蚀刻）形成。

公开(公告)号：US08679881B1

公开(公告)日：2014-03-25

申请号：US13934846

申请日：2013-07-03

申请人： Tekcore Co., Ltd.

发明人： Jen-Inn Chyi ,  Lung-Chieh Cheng ,  Hsueh-Hsing Liu ,  Geng-Yen Lee

IPC分类号： H01L21/00

CPC分类号： H01L21/02639 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02554

摘要： A growth method for reducing defect density of GaN includes steps of: sequentially forming a buffer growth layer, a stress release layer and a first nanometer cover layer on a substrate, wherein the first nanometer cover layer has multiple openings interconnected with the stress release layer; growing a first island in each of the openings; growing a first buffer layer and a second nanometer cover layer on the first island; and growing a second island to form a dislocated island structure. Thus, through the first nanometer cover layer and the second nanometer cover layer, multiple dislocated island structures can be directly formed to reduce manufacturing complexity as well as increase yield rate by decreasing manufacturing environment variation. Further, the epitaxial lateral over growth (ELOG) approach also effectively enhances characteristics of GaN optoelectronic semiconductor elements.

摘要翻译： 用于降低GaN的缺陷密度的生长方法包括以下步骤：在衬底上依次形成缓冲生长层，应力释放层和第一纳米覆盖层，其中第一纳米覆盖层具有与应力释放层互连的多个开口; 在每个开口生长第一个岛; 在第一岛上生长第一缓冲层和第二纳米覆盖层; 并增长第二个岛屿，形成一个错位的岛屿结构。 因此，通过第一纳米覆盖层和第二纳米覆盖层，可以直接形成多个位错岛结构，以降低制造复杂性，并通过减少制造环境变化来提高产率。 此外，外延横向增长（ELOG）方法还有效地增强GaN光电子半导体元件的特性。

公开(公告)号：USD647495S1

公开(公告)日：2011-10-25

申请号：US29385937

申请日：2011-02-23

申请人： Hsiang-Szu Chang ,  Nien-Tze Yeh ,  Kuen-Pu Lu ,  Chia-Hsun Chen ,  Yu-Ting Huang

设计人： Hsiang-Szu Chang ,  Nien-Tze Yeh ,  Kuen-Pu Lu ,  Chia-Hsun Chen ,  Yu-Ting Huang

公开(公告)号：US07981705B2

公开(公告)日：2011-07-19

申请号：US12846999

申请日：2010-07-30

申请人： Wei-Jung Chung ,  Shih-Hung Lee ,  Cheng-Hsien Li ,  Wen-Hsien Lin ,  Nien-Tze Yeh

发明人： Wei-Jung Chung ,  Shih-Hung Lee ,  Cheng-Hsien Li ,  Wen-Hsien Lin ,  Nien-Tze Yeh

IPC分类号： H01L21/00 ,  H01L27/148

CPC分类号： H01L33/0079 ,  H01L33/007 ,  Y10S428/917

摘要： In a method of manufacturing a vertical type light-emitting diode, a multilayered structure of group III nitride semiconductor compounds is epitaxy deposited on an irregular surface of a substrate. The substrate is then removed to expose an irregular surface of the multilayered structure corresponding to the irregular surface of the substrate. A portion of the exposed irregular surface of the multilayered structure is then etched for forming an electrode contact surface on which an electrode layer is subsequently formed. With this method, no specific planarized region is required on the irregular surface of the substrate. As a result, planarization treatment of the substrate is not necessary. The same substrate with the irregular surface can be reused for fabricating vertical and horizontal light-emitting diodes.

摘要翻译： 在制造垂直型发光二极管的方法中，III族氮化物半导体化合物的多层结构外延沉积在基板的不规则表面上。 然后去除衬底以暴露对应于衬底的不规则表面的多层结构的不规则表面。 然后蚀刻多层结构的暴露的不规则表面的一部分，以形成随后形成电极层的电极接触表面。 利用该方法，在基板的不规则表面上不需要特定的平坦化区域。 结果，不需要基板的平坦化处理。 具有不规则表面的相同基板可以重新用于制造垂直和水平发光二极管。

公开(公告)号：US20110097831A1

公开(公告)日：2011-04-28

申请号：US12846999

申请日：2010-07-30

申请人： Wei-Jung CHUNG ,  Shih-Hung Lee ,  Cheng-Hsien Li ,  Wen-Hsien Lin ,  Nien-Tze Yeh

发明人： Wei-Jung CHUNG ,  Shih-Hung Lee ,  Cheng-Hsien Li ,  Wen-Hsien Lin ,  Nien-Tze Yeh

IPC分类号： H01L33/04

CPC分类号： H01L33/0079 ,  H01L33/007 ,  Y10S428/917

摘要： In a method of manufacturing a vertical type light-emitting diode, a multilayered structure of group III nitride semiconductor compounds is epitaxy deposited on an irregular surface of a substrate. The substrate is then removed to expose an irregular surface of the multilayered structure corresponding to the irregular surface of the substrate. A portion of the exposed irregular surface of the multilayered structure is then etched for forming an electrode contact surface on which an electrode layer is subsequently formed. With this method, no specific planarized region is required on the irregular surface of the substrate. As a result, planarization treatment of the substrate is not necessary. The same substrate with the irregular surface can be reused for fabricating vertical and horizontal light-emitting diodes.

摘要翻译： 在制造垂直型发光二极管的方法中，III族氮化物半导体化合物的多层结构外延沉积在基板的不规则表面上。 然后去除衬底以暴露对应于衬底的不规则表面的多层结构的不规则表面。 然后蚀刻多层结构的暴露的不规则表面的一部分，以形成随后形成电极层的电极接触表面。 利用该方法，在基板的不规则表面上不需要特定的平坦化区域。 结果，不需要基板的平坦化处理。 具有不规则表面的相同基板可以重新用于制造垂直和水平发光二极管。