摘要:
The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
摘要:
In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要:
A projection objective has an object surface and an image surface. The projection objective includes a plurality of optical elements arranged along an optical axis and configured so that during operation the projection objective images a pattern arranged in the object surface onto the image surface. The optical elements include a concave mirror a first deflecting mirror and a second deflecting mirror. The first deflecting mirror is tilted relative to the optical axis by a first tilt angle, t1, about a first tilt axis so that during operation the first deflecting mirror deflects light at a wavelength λ from the object surface towards the concave mirror or deflects light at λ from the concave mirror towards the image surface. The second deflecting mirror is tilted relative to the optical axis by a second tilt angle, t2, about a second tilt axis. For a pattern including a grating having a line width of 45 nm and a pitch, p, the projection objective images the pattern to the image surface such that for a first orientation of the pattern and a second orientation of the pattern a difference, ΔHV, between the imaged line width is 1.2 nm or less for 100 nm
摘要:
An objective and a method for operating an objective, in particular a projection objective or an illumination objective for microlithography for imaging a reticle onto a wafer, with a plurality of optical elements that are arranged along a ray path, wherein at least one optical element of a first kind (1) is provided, which is irradiated only partially by a ray bundle, wherein the one or more optical element(s) of the first kind are rotatably mounted or positionable about the optical axis or an axis parallel thereto, wherein, for each optical element of the first kind at least two mounting positions are provided, and wherein the rotation angle between the two mounting positions is defined by the surface (7) irradiated by the ray bundle such that, in the various mounting positions, the surfaces irradiated by the ray path do not overlap.
摘要:
The disclosure relates to an optical correction device with thermal actuators for influencing the temperature distribution in the optical correction device. The optical correction device is constructed from at least two partial elements which differ with regard to their ability to transport heat. Furthermore, the disclosure relates to methods for influencing the temperature distribution in an optical element.
摘要:
A projection objective for applications in microlithography, a microlithography projection exposure apparatus with a projection objective, a microlithographic manufacturing method for microstructured components, and a component manufactured using such a manufacturing method are disclosed.
摘要:
The disclosure relates to a method for improving the imaging properties of an optical system, such as a projection objective for microlithography. The disclosure also relates to an optical system, such as a projection objective for microlithography.
摘要:
A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane; disposing a substrate carrying a resist in a region of the image plane and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要:
Objective, in particular a projection objective for a microlithography projection-exposure installation, with at least one fluoride crystal lens. A reduction in the detrimental influence of birefringence is achieved if this lens is a (100)-lens with a lens axis which is approximately perpendicular to the {100} crystallographic planes or to the crystallographic planes equivalent thereto of the fluoride crystal. In the case of objectives with at least two fluoride crystal lenses, it is favorable if the fluoride crystal lenses are arranged such that they are rotated with respect to one another. The lens axes of the fluoride crystal lenses may in this case point not only in the crystallographic direction but also in the crystallographic direction or in the crystallographic direction. A further reduction in the detrimental influence of birefringence is achieved by the simultaneous use of groups with (100)-lenses rotated with respect to one another and groups with (111)-lenses or (110)-lenses rotated with respect to one another. A further reduction in the detrimental influence of birefringence is obtained by covering an optical element with a compensation coating.
摘要:
A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.