公开(公告)号：US20110308969A1

公开(公告)日：2011-12-22

申请号：US12820574

申请日：2010-06-22

Applicant: Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

Inventor： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

IPC: G01N17/04

CPC classification number: G01N17/04

Abstract: The present invention provides a method of reducing corrosion and water decomposition on a surface of an electrode having a titanium nitride conductive layer disposed on a substrate and estimating extent of reduction thereof. The electrode is immersed into a solution containing a hydroxyl-functional compound. Thereafter, a voltage is applied to the titanium nitride conductive layer of the electrode. The extent of oxidation of the titanium nitride conductive layer is correlated with the extent of formation of oxide of titanium nitride and/or the extent of oxidation of the titanium nitride conductive layer is correlated with the increase of surface roughness. The extent of water decomposition is correlated with formation of hydrogen and oxygen bubbles.

Abstract translation: 本发明提供了在具有设置在基板上的具有氮化钛导电层的电极的表面上减少腐蚀和水分解的方法，并且估计其还原程度。 将电极浸入含有羟基官能化合物的溶液中。 然后，向电极的氮化钛导电层施加电压。 氮化钛导电层的氧化程度与氮化钛的氧化物的形成程度和/或氮化钛导电层的氧化程度与表面粗糙度的增加有关。 水分解的程度与氢气和氧气泡的形成有关。

公开(公告)号：US08026560B2

公开(公告)日：2011-09-27

申请号：US12837119

申请日：2010-07-15

Applicant: Ali Afzali-Ardakani ,  Sudhir Gowda ,  Supratik Guha ,  Hendrik F. Hamann ,  Emanuel Tutuc

Inventor： Ali Afzali-Ardakani ,  Sudhir Gowda ,  Supratik Guha ,  Hendrik F. Hamann ,  Emanuel Tutuc

IPC: H01L29/84

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  Y10S977/724 ,  Y10S977/953

Abstract: Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.

公开(公告)号：US20110124187A1

公开(公告)日：2011-05-26

申请号：US12625835

申请日：2009-11-25

Applicant: Ali Afzali-Ardakani ,  Damon B. Farmer ,  Lidija Sekaric

Inventor： Ali Afzali-Ardakani ,  Damon B. Farmer ,  Lidija Sekaric

IPC: H01L21/22

CPC classification number: H01L21/2254

Abstract: A process of doping a silicon layer with dopant atoms generally includes reacting a vapor of a dopant precursor with oxide and/or hydroxide reactive sites present on the silicon layer to form a self assembled monolayer of dopant precursor; hydrolyzing the self assembled monolayer of the dopant precursor with water vapor to form pendant hydroxyl groups on the dopant precursor; capping the self assembled monolayer with an oxide layer; and annealing the silicon layer at a temperature effective to diffuse dopant atoms from the dopant precursor into the silicon layer. Additional monolayers can be formed in a similar manner, thereby providing controlled layer-by-layer vapor phase deposition of the dopant precursor compounds for controlled doping of silicon.

Abstract translation: 用掺杂剂原子掺杂硅层的方法通常包括使掺杂剂前体的蒸气与存在于硅层上的氧化物和/或氢氧化物反应性位点反应以形成掺杂剂前体的自组装单层; 用水蒸汽水解掺杂剂前体的自组装单层以在掺杂剂前体上形成侧基羟基; 用氧化物层封闭自组装单层; 以及在有效地将掺杂剂原子从掺杂剂前体扩散到硅层中的温度下退火硅层。 可以以类似的方式形成另外的单层，由此提供受控的掺杂剂前体化合物的逐层气相沉积用于硅的受控掺杂。

公开(公告)号：US07932128B2

公开(公告)日：2011-04-26

申请号：US11771854

申请日：2007-06-29

Applicant: Ali Afzali-Ardakani ,  Cherie R. Kagan

Inventor： Ali Afzali-Ardakani ,  Cherie R. Kagan

IPC: H01L51/40

CPC classification number: H01L51/0508 ,  C08F12/22 ,  C08F12/26 ,  C08F12/30 ,  C08F112/32 ,  C09D125/18 ,  H01L51/004 ,  H01L51/0558 ,  C08F220/18 ,  C08F212/32

Abstract: A method of forming a polymeric material with a pendant polycyclic aromatic compound precursor includes forming a polycyclic aromatic compound precursor (e.g., a pentacene precursor) including at least one polymerizable functionality, and polymerizing the polymerizable functionality to form the polymeric material with the pendant precursor.

Abstract translation: 用侧基多环芳族化合物前体形成聚合物材料的方法包括形成包含至少一种可聚合官能团的多环芳族化合物前体（如并五苯前体），并聚合可聚合官能团以形成具有侧挂前体的聚合物材料。

公开(公告)号：US20100327259A1

公开(公告)日：2010-12-30

申请号：US12837119

申请日：2010-07-15

Applicant: Ali Afzali-Ardakani ,  Sudhir Gowda ,  Supratik Guha ,  Hendrik F. Hamann ,  Emanuel Tutuc

Inventor： Ali Afzali-Ardakani ,  Sudhir Gowda ,  Supratik Guha ,  Hendrik F. Hamann ,  Emanuel Tutuc

IPC: H01L29/775

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  Y10S977/724 ,  Y10S977/953

Abstract: Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.

Abstract translation: 提供了超灵敏检测技术。 一方面，提供一种检测装置。 检测装置包括源; 排水 纳米线，其包括半导体材料，所述半导体材料具有夹在所述源极上的第一端和夹在所述漏极上并在其间自由悬挂的第二端; 和靠近纳米线的门。

公开(公告)号：US20100044678A1

公开(公告)日：2010-02-25

申请号：US12195524

申请日：2008-08-21

Applicant: Ali Afzali-Ardakani ,  Supratik Guha ,  Cherie R. Kagan ,  George S. Tulevski ,  Emanuel Tutuc

Inventor： Ali Afzali-Ardakani ,  Supratik Guha ,  Cherie R. Kagan ,  George S. Tulevski ,  Emanuel Tutuc

IPC: H01L51/05 ,  H01L51/40

CPC classification number: H01L51/0049 ,  B82Y10/00 ,  H01L51/0012

Abstract: A method of placing a functionalized semiconducting nanostructure, includes functionalizing a semiconducting nanostructure including one of a nanowire and a nanocrystal, with an organic functionality including a functional group for bonding to a bonding surface, dispersing the functionalized semiconducting nanostructure in a solvent to form a dispersion, and depositing the dispersion onto the bonding surface.

Abstract translation: 放置功能化半导体纳米结构的方法包括使包括纳米线和纳米晶体之一的半导体纳米结构官能化，具有包括键合表面的官能团的有机官能团，将官能化的半导体纳米结构分散在溶剂中以形成分散体 ，并将该分散体沉积到粘合表面上。

公开(公告)号：US20090300914A1

公开(公告)日：2009-12-10

申请号：US12533766

申请日：2009-07-31

Applicant: Gareth Geoffrey Hougham ,  Ali Afzali ,  Steven Allen Cordes ,  Paul W. Coteus ,  Matthew J. Farinelli ,  Sherif A. Goma ,  Alphonso P. Lanzetta ,  Daniel Peter Morris ,  Joanna Rosner ,  Nisha Yohannan

Inventor： Gareth Geoffrey Hougham ,  Ali Afzali ,  Steven Allen Cordes ,  Paul W. Coteus ,  Matthew J. Farinelli ,  Sherif A. Goma ,  Alphonso P. Lanzetta ,  Daniel Peter Morris ,  Joanna Rosner ,  Nisha Yohannan

IPC: H01R43/16

CPC classification number: H01R13/2414 ,  G01R1/07378 ,  H05K3/326 ,  H05K3/4007 ,  H05K3/4038 ,  H05K7/1061

Abstract: Techniques for forming enhanced electrical connections are provided. In one aspect, a method of forming an electrical connecting device includes the steps of: depositing an elastomeric material on an electrically insulating carrier; and metallizing the elastomeric material so as to form an electrically conductive layer running continuously through a plane of the carrier and along a surface of the elastomeric material.

Abstract translation: 提供了用于形成增强的电连接的技术。 一方面，一种形成电连接装置的方法包括以下步骤：将弹性体材料沉积在电绝缘载体上; 以及对弹性体材料进行金属化，以便形成连续穿过载体的平面并且沿弹性体材料的表面延伸的导电层。

公开(公告)号：US20090053908A1

公开(公告)日：2009-02-26

申请号：US12127418

申请日：2008-05-27

Applicant: Gareth Geoffrey Hougham ,  Ali Afzali ,  Steven Allen Cordes ,  Paul W. Coteus ,  Matthew J. Farinelli ,  Sherif A. Goma ,  Alphonso P. Lanzetta ,  Daniel Peter Morris ,  Joanna Rosner ,  Nisha Yohannan

Inventor： Gareth Geoffrey Hougham ,  Ali Afzali ,  Steven Allen Cordes ,  Paul W. Coteus ,  Matthew J. Farinelli ,  Sherif A. Goma ,  Alphonso P. Lanzetta ,  Daniel Peter Morris ,  Joanna Rosner ,  Nisha Yohannan

IPC: H01R12/00

CPC classification number: H01R9/09 ,  G01R1/07378 ,  H01R13/2414 ,  H05K3/326 ,  H05K3/4007 ,  H05K3/4038 ,  H05K7/1061 ,  Y10S439/931

Abstract: Techniques for forming enhanced electrical connections are provided. In one aspect, an electrical connecting device comprises an electrically insulating carrier having one or more contact structures traversing a plane thereof. Each contact structure comprises an elastomeric material having an electrically conductive layer running along at least one surface thereof continuously through the plane of the carrier.

Abstract translation: 提供了用于形成增强的电连接的技术。 一方面，电连接装置包括具有穿过其平面的一个或多个接触结构的电绝缘载体。 每个接触结构包括具有连续穿过载体平面的至少一个表面延伸的导电层的弹性体材料。

公开(公告)号：US20080318157A1

公开(公告)日：2008-12-25

申请号：US12199607

申请日：2008-08-27

Applicant: Ali Afzali-Ardankani ,  Cherie R. Kagan ,  Laura L. Kosbar ,  Sally A. Swanson ,  Charan Srinivasan

Inventor： Ali Afzali-Ardankani ,  Cherie R. Kagan ,  Laura L. Kosbar ,  Sally A. Swanson ,  Charan Srinivasan

IPC: G03F7/004 ,  G03F7/20

CPC classification number: C23C22/02 ,  B82Y10/00 ,  G03F7/165 ,  G03F7/405

Abstract: The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.

Abstract translation: 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。

公开(公告)号：US20080265381A1

公开(公告)日：2008-10-30

申请号：US12133043

申请日：2008-06-04

Applicant: Ali Afzali-Ardakani ,  Stephen M. Gates ,  Alfred Grill ,  Deborah A. Neumayer ,  Son Nguyen ,  Vishnubhai V. Patel

Inventor： Ali Afzali-Ardakani ,  Stephen M. Gates ,  Alfred Grill ,  Deborah A. Neumayer ,  Son Nguyen ,  Vishnubhai V. Patel

IPC: H01L21/469 ,  H01L23/58

CPC classification number: H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound.

Abstract translation: 可用于半导体器件制造的多孔复合材料，其中孔的直径（或特征尺寸）和孔径分布（PSD）以纳米级方式进行控制，并且其表现出改进的内聚强度（或等效地提高的断裂韧性或 降低脆性），并且提供了诸如应力腐蚀开裂，Cu进入和其它关键性能等性能的降低的耐水分性。 多孔复合材料是利用至少一种双功能有机致孔剂作为前体化合物制造的。