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公开(公告)号：US20080318157A1
公开(公告)日：2008-12-25
申请号：US12199607
申请日：2008-08-27
申请人： Ali Afzali-Ardankani , Cherie R. Kagan , Laura L. Kosbar , Sally A. Swanson , Charan Srinivasan
发明人： Ali Afzali-Ardankani , Cherie R. Kagan , Laura L. Kosbar , Sally A. Swanson , Charan Srinivasan
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译： 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。
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公开(公告)号：US20120308933A1
公开(公告)日：2012-12-06
申请号：US13586475
申请日：2012-08-15
IPC分类号： G03F7/20
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译： 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。
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公开(公告)号：US07531293B2
公开(公告)日：2009-05-12
申请号：US11445326
申请日：2006-06-02
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译： 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着到选自金属，金属氧化物或半导体材料的基板上。
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公开(公告)号：US20070278179A1
公开(公告)日：2007-12-06
申请号：US11445326
申请日：2006-06-02
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译： 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。
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公开(公告)号：US08273886B2
公开(公告)日：2012-09-25
申请号：US12199607
申请日：2008-08-27
IPC分类号： C07F7/02 , C07F9/06 , C07F9/02 , C07D213/22
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译： 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。
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公开(公告)号：US20150179267A1
公开(公告)日：2015-06-25
申请号：US14139219
申请日：2013-12-23
CPC分类号： G11C11/5642 , G11C11/5628 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/107 , G11C16/28 , G11C16/3454
摘要： Embodiments of methods and systems disclosed herein provide a NAND cell programming technique that results in a substantially reduced Tprog to complete a programming operation. In particular, embodiments of the subject matter disclosed herein utilize two Vpgm programming pulses during each programming iteration, or loop. One of the two programming pulses corresponds to a conventional programming Vpgm pulse and the second pulse comprises a programming pulse that having a greater Vpgm that is greater than the conventional programming Vpgm so that the slow cells are programmed to PV in fewer pulses (iterations), thereby effectively simultaneously programming and verifying cells having different programming speeds.
摘要翻译： 本文公开的方法和系统的实施例提供NAND单元编程技术，其导致基本上减少的T程序以完成编程操作。 特别地，本文公开的主题的实施例在每个编程迭代期间利用两个Vpgm编程脉冲或循环。 两个编程脉冲之一对应于常规编程Vpgm脉冲，第二脉冲包括具有比常规编程Vpgm更大的Vpgm的编程脉冲，使得慢单元以更少的脉冲（迭代）被编程为PV， 从而有效地同时编程和验证具有不同编程速度的单元。
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公开(公告)号：US08982625B2
公开(公告)日：2015-03-17
申请号：US13600623
申请日：2012-08-31
申请人： Akira Goda , Mark Helm , Pranav Kalavade , Charan Srinivasan
发明人： Akira Goda , Mark Helm , Pranav Kalavade , Charan Srinivasan
IPC分类号： G11C16/04
CPC分类号： G11C16/3427 , G11C16/0483 , G11C16/10 , G11C16/26 , G11C16/30 , G11C16/3418 , G11C16/3454 , G11C16/3459
摘要： Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying, during a first pass of programming, a first bias voltage value to a source select gate to isolate memory cells from a source, applying a programming voltage to an access line of a page of the memory cells during the first pass of programming, and applying a second bias voltage value to the source select gate to isolate the memory cells from the source during a second pass of programming. Further devices, systems, and methods are disclosed.
摘要翻译： 一些实施例包括存储器设备和编程存储器设备的存储器单元的方法。 一种这样的方法可以包括在编程的第一次通过期间将第一偏置电压值应用于源极选择栅极以将存储器单元与源极隔离，在第一次处理期间将编程电压施加到存储器单元的页面的访问线 编程的通过，以及在源选择栅极施加第二偏置电压值以在第二次编程期间隔离存储器单元与源极。 公开了其它装置，系统和方法。
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公开(公告)号：US20150043275A1
公开(公告)日：2015-02-12
申请号：US13963629
申请日：2013-08-09
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/10 , G11C16/3418 , G11C16/3427 , G11C2211/5621
摘要： Embodiments of the present disclosure include techniques and configurations for multi-pulse programming of a memory device. In one embodiment, a method includes applying multiple pulses to program one or more multi-level cells (MLCs) of a memory device, wherein individual pulses of the multiple pulses correspond with individual levels of the one or more MLCs and subsequent to applying the multiple pulses, verifying the programming of the individual levels of the one or more MLCs. Other embodiments may be described and/or claimed.
摘要翻译： 本公开的实施例包括用于存储器件的多脉冲编程的技术和配置。 在一个实施例中，一种方法包括应用多个脉冲来对存储器件的一个或多个多电平单元（MLC）进行编程，其中多个脉冲的各个脉冲与一个或多个MLC的各个级别对应，并且在施加多个 脉冲，验证一个或多个MLC的各个级别的编程。 可以描述和/或要求保护其他实施例。
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公开(公告)号：US20150378815A1
公开(公告)日：2015-12-31
申请号：US14314663
申请日：2014-06-25
申请人： Akira Goda , Pranav Kalavade , Charan Srinivasan
发明人： Akira Goda , Pranav Kalavade , Charan Srinivasan
IPC分类号： G06F11/10
CPC分类号： G06F11/1068 , G06F11/1072 , G11C11/5628 , G11C11/5642 , G11C16/3454 , G11C2029/0411
摘要： Technology for programming a page of memory in a NAND memory device is disclosed and described. In an example, a method may include applying initial programming pulses for lower page programming of the page and pre-reading data of the lower page. The method may further include determining whether to apply an error recovery operation to the data of the lower page. Data indicative of secondary programming pulses to be used for programming upper page data are stored and the upper page data is programmed based on the secondary programming pulses and the data of the lower page.
摘要翻译： 公开并描述了用于对NAND存储器件中的存储器页进行编程的技术。 在一个示例中，方法可以包括应用用于页面的较低页面编程和下部页面的预读数据的初始编程脉冲。 该方法还可以包括确定是否对下部页面的数据应用错误恢复操作。 存储表示用于编程上页数据的辅助编程脉冲的数据，并且基于次要编程脉冲和下部页面的数据对高位页数据进行编程。
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公开(公告)号：US20140063960A1
公开(公告)日：2014-03-06
申请号：US13600623
申请日：2012-08-31
申请人： Akira Goda , Mark Helm , Pranav Kalavade , Charan Srinivasan
发明人： Akira Goda , Mark Helm , Pranav Kalavade , Charan Srinivasan
CPC分类号： G11C16/3427 , G11C16/0483 , G11C16/10 , G11C16/26 , G11C16/30 , G11C16/3418 , G11C16/3454 , G11C16/3459
摘要： Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying, during a first pass of programming, a first bias voltage value to a source select gate to isolate memory cells from a source, applying a programming voltage to an access line of a page of the memory cells during the first pass of programming, and applying a second bias voltage value to the source select gate to isolate the memory cells from the source during a second pass of programming. Further devices, systems, and methods are disclosed.
摘要翻译： 一些实施例包括存储器设备和编程存储器设备的存储器单元的方法。 一种这样的方法可以包括在编程的第一次通过期间将第一偏置电压值应用于源极选择栅极以将存储器单元与源极隔离，在第一次处理期间将编程电压施加到存储器单元的页面的访问线 编程的通过，以及在源选择栅极施加第二偏置电压值以在第二次编程期间隔离存储器单元与源极。 公开了其它装置，系统和方法。
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