公开(公告)号：US20210320324A1

公开(公告)日：2021-10-14

申请号：US17185159

申请日：2021-02-25

Applicant: Zhongchun WANG ,  Arvind KAMATH

Inventor： Zhongchun WANG ,  Arvind KAMATH

IPC: H01M10/0562 ,  H01M10/0525 ,  H01M10/0585 ,  H01M4/36 ,  H01M4/62

Abstract: A multilayer solid-state electrolyte, solid-state battery cells including the same, and methods of making the electrolyte and the battery cells are disclosed. The multi-layer solid-state electrolyte includes a solid bulk electrolyte layer comprising carbon-doped lithium phosphorus oxynitride (LiPON) or WO3+x (where 0≤x≤1), and a solid anode interface layer comprising LiPON or a metal oxide that forms a stable complex oxide with lithium oxide and conducts lithium ions when lithiated. The anode interface layer has a thickness less than that of the bulk electrolyte layer. The method of making the multi-layer solid-state electrolyte includes depositing one of the solid bulk electrolyte layer and the solid anode interface layer on an active layer of a battery cell, then depositing the other layer on the one layer. As for the solid-state electrolyte, the anode interface layer has a thickness less than that of the bulk electrolyte layer.

公开(公告)号：US20180205135A1

公开(公告)日：2018-07-19

申请号：US15916774

申请日：2018-03-09

Applicant: Mao TAKASHIMA ,  Aditi CHANDRA ,  Somnath MUKHERJEE ,  Gloria WONG ,  Khanh VAN TU ,  Joey LI ,  Anton POPIOLEK ,  Arvind KAMATH

Inventor： Mao TAKASHIMA ,  Aditi CHANDRA ,  Somnath MUKHERJEE ,  Gloria WONG ,  Khanh VAN TU ,  Joey LI ,  Anton POPIOLEK ,  Arvind KAMATH

IPC: H01Q1/22 ,  H01Q7/06

CPC classification number: H01Q1/2291 ,  H01Q1/2225 ,  H01Q7/06

Abstract: A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.

公开(公告)号：US09165238B2

公开(公告)日：2015-10-20

申请号：US12689703

申请日：2010-01-19

Applicant: James Montague Cleeves ,  J. Devin MacKenzie ,  Arvind Kamath

Inventor： James Montague Cleeves ,  J. Devin MacKenzie ,  Arvind Kamath

IPC: H01L21/3205 ,  G06K19/077 ,  H01F17/00

CPC classification number: H01L27/1255 ,  G06K19/073 ,  G06K19/07749 ,  H01F17/0006 ,  H01L23/13 ,  H01L23/142 ,  H01L23/66 ,  H01L27/127 ,  H01L27/1292 ,  H01L28/60 ,  H01L29/66143 ,  H01L29/66742 ,  H01L29/78696 ,  H01L29/872 ,  H01L2223/6611 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Radio frequency identification (RFID) tags and processes for manufacturing the same. The RFID device generally includes (1) a metal antenna and/or inductor; (2) a dielectric layer thereon, to support and insulate integrated circuitry from the metal antenna and/or inductor; (3) a plurality of diodes and a plurality of transistors on the dielectric layer, the diodes having at least one layer in common with the transistors; and (4) a plurality of capacitors in electrical communication with the metal antenna and/or inductor and at least some of the diodes, the plurality of capacitors having at least one layer in common with the plurality of diodes and/or with contacts to the diodes and transistors. The method preferably integrates liquid silicon-containing ink deposition into a cost effective, integrated manufacturing process for the manufacture of RFID circuits. Furthermore, the present RFID tags generally provide higher performance (e.g., improved electrical characteristics) as compared to tags containing organic electronic devices.

Abstract translation: 射频识别（RFID）标签及其制造方法。 RFID设备通常包括（1）金属天线和/或电感器; （2）其上的介电层，用于支撑和绝缘来自金属天线和/或电感器的集成电路; （3）介电层上的多个二极管和多个晶体管，二极管具有至少一个与晶体管共同的层; 和（4）与金属天线和/或电感器以及至少一些二极管电连通的多个电容器，所述多个电容器具有与所述多个二极管共同的至少一个层和/或与所述多个二极管的触点 二极管和晶体管。 该方法优选将液态含硅油墨沉积物集成到用于制造RFID电路的成本有效的集成制造工艺中。 此外，与含有机电子器件的标签相比，本RFID标签通常提供更高的性能（例如，改进的电气特性）。

公开(公告)号：US20140299883A1

公开(公告)日：2014-10-09

申请号：US14311044

申请日：2014-06-20

Applicant: Joerg ROCKENBERGER ,  James Montague Cleeves ,  Arvind Kamath

Inventor： Joerg ROCKENBERGER ,  James Montague Cleeves ,  Arvind Kamath

IPC: H01L29/786

CPC classification number: H01L29/7866 ,  B82Y10/00 ,  H01L27/1248 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78681 ,  H01L29/7869

Abstract: A self-aligned top-gate thin film transistor (TFT) and a method of forming such a thin film transistor, by forming a semiconductor thin film layer; printing a doped glass pattern thereon, a gap in the doped glass pattern defining a channel region of the TFT; forming a gate electrode on or over the channel region, the gate electrode comprising a gate dielectric film and a gate conductor thereon; and diffusing a dopant from the doped glass pattern into the semiconductor thin film layer.

Abstract translation: 一种自对准顶栅薄膜晶体管（TFT）和通过形成半导体薄膜层形成这种薄膜晶体管的方法; 在其上印刷掺杂的玻璃图案，所述掺杂玻璃图案中的间隙限定所述TFT的沟道区域; 在沟道区域上或上方形成栅电极，栅电极在其上包括栅介质膜和栅极导体; 并且将掺杂剂从掺杂的玻璃图案扩散到半导体薄膜层中。

公开(公告)号：US20130189823A1

公开(公告)日：2013-07-25

申请号：US13791721

申请日：2013-03-08

Applicant: Arvind KAMATH ,  Erik SCHER ,  Patrick SMITH ,  Aditi CHANDRA ,  Steven MOLESA

Inventor： Arvind KAMATH ,  Erik SCHER ,  Patrick SMITH ,  Aditi CHANDRA ,  Steven MOLESA

IPC: H01L21/36

CPC classification number: H01L21/36 ,  C23C18/08 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1295 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/28273 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76871 ,  H01L21/76895 ,  H01L27/1285 ,  H01L27/1292 ,  H01L28/40 ,  H01L29/0657 ,  H01L29/66143 ,  H01L29/6675 ,  H01L29/7881 ,  H01L29/872 ,  H05K1/16 ,  H05K1/162 ,  H05K3/125 ,  H05K2201/098

Abstract: The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, etc.) having dielectric, conductor, and/or semiconductor layers with smooth and/or dome-shaped profiles and methods of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition that includes a semiconductor, metal, or dielectric precursor. The smooth and/or dome-shaped cross-sectional profile allows for smooth topological transitions without sharp steps, preventing feature discontinuities during deposition and allowing for more complete step coverage of subsequently deposited structures. The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures. Such oxide layers may have a uniform thickness and provide substantially complete coverage of the underlying electrically active feature. Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.

公开(公告)号：US20130069785A1

公开(公告)日：2013-03-21

申请号：US13590006

申请日：2012-08-20

Applicant: Vivek SUBRAMANIAN ,  Patrick Smith ,  Vikram Pavate ,  Arvind Kamath ,  Criswell Choi ,  Aditi Chandra ,  James Montague Cleeves

Inventor： Vivek SUBRAMANIAN ,  Patrick Smith ,  Vikram Pavate ,  Arvind Kamath ,  Criswell Choi ,  Aditi Chandra ,  James Montague Cleeves

IPC: G08B13/24 ,  G06K19/067

CPC classification number: G08B13/2431 ,  G06K19/067 ,  G06K19/07749 ,  G08B13/242 ,  G08B13/2437

Abstract: The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.

公开(公告)号：US20120307569A1

公开(公告)日：2012-12-06

申请号：US13585673

申请日：2012-08-14

Applicant: Arvind KAMATH ,  Patrick Smith ,  James Montague Cleeves

Inventor： Arvind KAMATH ,  Patrick Smith ,  James Montague Cleeves

IPC: H01L29/788 ,  G11C16/10 ,  G11C16/04 ,  H01L21/336

CPC classification number: H01L21/28518 ,  H01L21/288 ,  H01L21/76801 ,  H01L21/76895 ,  H01L27/115 ,  H01L27/11558 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/7881

Abstract: A nonvolatile memory cell is disclosed, having first and second semiconductor islands at the same horizontal level and spaced a predetermined distance apart, the first semiconductor island providing a control gate and the second semiconductor island providing source and drain terminals; a gate dielectric layer on at least part of the first semiconductor island; a tunneling dielectric layer on at least part of the second semiconductor island; a floating gate on at least part of the gate dielectric layer and the tunneling dielectric layer; and a metal layer in electrical contact with the control gate and the source and drain terminals. In one advantageous embodiment, the nonvolatile memory cell may be manufactured using an “all-printed” process technology.

Abstract translation: 公开了一种非易失性存储器单元，其具有在相同水平位置处并且间隔开预定距离的第一和第二半导体岛，所述第一半岛具有提供控制栅极和所述第二半岛岛提供源极和漏极端子; 在所述第一半导体岛的至少一部分上的栅介质层; 在所述第二半导体岛的至少一部分上的隧道介电层; 至少部分栅极电介质层和隧道电介质层上的浮栅; 以及与控制栅极以及源极和漏极端子电接触的金属层。 在一个有利的实施例中，非易失性存储单元可以使用全印刷工艺技术来制造。

公开(公告)号：US20120181636A1

公开(公告)日：2012-07-19

申请号：US13427091

申请日：2012-03-22

Applicant: Aditi Chandra ,  Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Mao Takashima ,  Erik Scher

Inventor： Aditi Chandra ,  Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Mao Takashima ,  Erik Scher

IPC: H01L29/772 ,  H01L23/485 ,  H01L21/336

CPC classification number: H01L21/288 ,  H01L21/28518 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76838 ,  H01L21/76873 ,  H01L21/76895 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/78618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.

Abstract translation: 公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。 可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。 金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子 。 这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。

公开(公告)号：US20100244133A1

公开(公告)日：2010-09-30

申请号：US12797274

申请日：2010-06-09

Applicant: Arvind KAMATH ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zürcher

Inventor： Arvind KAMATH ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zürcher

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L21/316 ,  H01L21/02211 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/3165 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/78621

Abstract: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

Abstract translation: 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一电介质层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

公开(公告)号：US20100148859A1

公开(公告)日：2010-06-17

申请号：US12689703

申请日：2010-01-19

Applicant: James Montague CLEEVES ,  J. Devin MacKenzie ,  Arvind Kamath

Inventor： James Montague CLEEVES ,  J. Devin MacKenzie ,  Arvind Kamath

IPC: H01L25/00 ,  H01L27/06

CPC classification number: H01L27/1255 ,  G06K19/073 ,  G06K19/07749 ,  H01F17/0006 ,  H01L23/13 ,  H01L23/142 ,  H01L23/66 ,  H01L27/127 ,  H01L27/1292 ,  H01L28/60 ,  H01L29/66143 ,  H01L29/66742 ,  H01L29/78696 ,  H01L29/872 ,  H01L2223/6611 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Radio frequency identification (RFID) tags and processes for manufacturing the same. The RFID device generally includes (1) a metal antenna and/or inductor; (2) a dielectric layer thereon, to support and insulate integrated circuitry from the metal antenna and/or inductor; (3) a plurality of diodes and a plurality of transistors on the dielectric layer, the diodes having at least one layer in common with the transistors; and (4) a plurality of capacitors in electrical communication with the metal antenna and/or inductor and at least some of the diodes, the plurality of capacitors having at least one layer in common with the plurality of diodes and/or with contacts to the diodes and transistors. The method preferably integrates liquid silicon-containing ink deposition into a cost effective, integrated manufacturing process for the manufacture of RFID circuits. Furthermore, the present RFID tags generally provide higher performance (e.g., improved electrical characteristics) as compared to tags containing organic electronic devices.

Abstract translation: 射频识别（RFID）标签及其制造方法。 RFID设备通常包括（1）金属天线和/或电感器; （2）其上的介电层，用于支撑和绝缘来自金属天线和/或电感器的集成电路; （3）介电层上的多个二极管和多个晶体管，二极管具有至少一个与晶体管共同的层; 和（4）与金属天线和/或电感器以及至少一些二极管电连通的多个电容器，所述多个电容器具有与所述多个二极管共同的至少一个层和/或与所述多个二极管的触点 二极管和晶体管。 该方法优选将液态含硅油墨沉积物集成到用于制造RFID电路的成本有效的集成制造工艺中。 此外，与含有机电子器件的标签相比，本RFID标签通常提供更高的性能（例如，改进的电气特性）。