Developer-soluble metal alkoxide coatings for microelectronic applications
    21.
    发明申请
    Developer-soluble metal alkoxide coatings for microelectronic applications 有权
    用于微电子应用的显影剂可溶性金属醇盐涂料

    公开(公告)号:US20030235786A1

    公开(公告)日:2003-12-25

    申请号:US10180625

    申请日:2002-06-25

    Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers of the composition include recurring units having the formula 1 where X is a light-attenuating moiety, M is a metal, and each R is individually selected from the group consisting of hydrogen, alkyls, aryls, alkoxys, and phenoxys. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.

    Abstract translation: 提供了抗反射组合物和使用这些组合物形成电路的方法。 组合物包含溶解或分散在溶剂体系中的聚合物。 在优选的实施方案中,组合物的聚合物包括具有下式的重复单元:其中X是光衰减部分,M是金属,并且每个R各自选自氢,烷基,芳基,烷氧基和 苯氧基 所得到的组合物是旋转碗相容的(即,它们在微光刻工艺的烘烤阶段之前或在室温下储存期间不交联)是湿显影的并且具有优异的光学性能。

    Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
    22.
    发明申请
    Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition 有权
    通过等离子体增强化学气相沉积沉积的聚合抗反射涂层

    公开(公告)号:US20030219541A1

    公开(公告)日:2003-11-27

    申请号:US10411046

    申请日:2003-04-09

    CPC classification number: G02B1/11 G02B1/111 G03F7/091

    Abstract: An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The most preferred starting monomers are 4-fluorostyrene, 2,3,4,5,6-pentafluorostyrene, and allylpentafluorobenzene. The PECVD processes comprise subjecting the monomers to sufficient electric current and pressure so as to cause the monomers to sublime to form a vapor which is then changed to the plasma state by application of an electric current. The vaporized monomers are subsequently polymerized onto a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflective coatings on large surface substrates having super submicron (0.25 nullm or smaller) features. The process provides a much faster deposition rate than conventional chemical vapor deposition (CVD) methods, is environmentally friendly, and is economical

    Abstract translation: 提供了一种用于将聚合物抗反射涂层施加到基底表面和所得前体结构的改进方法。 广泛地,这些方法包括在衬底表面上的等离子体增强化学气相沉积(PECVD)聚合物。 最优选的起始单体是4-氟苯乙烯,2,3,4,5,6-五氟苯乙烯和烯丙基五氟苯。 PECVD方法包括使单体经受足够的电流和压力,以使单体升华以形成蒸汽,然后通过施加电流将其转化为等离子体状态。 蒸发的单体随后在沉积室中聚合到基底表面上。 本发明的方法可用于在具有超亚微米(0.25μm或更小)特征的大表面基底上提供高保形抗反射涂层。 该方法提供比常规化学气相沉积(CVD)方法更快的沉积速率,是环境友好的并且是经济的

    Lithography pattern shrink process and articles
    23.
    发明申请
    Lithography pattern shrink process and articles 有权
    平版印刷图案收缩工艺和文章

    公开(公告)号:US20030203320A1

    公开(公告)日:2003-10-30

    申请号:US10378435

    申请日:2003-03-03

    Abstract: Novel processes of applying a thin, uniform, conformal organic polymeric film by a wide variety of deposition processes into lithography pattern substrates are provided. The inventive processes result in shrinking of the gaps in the lithography pattern equally, thus producing a smaller dimension. The amount of pattern shrinkage is selectively controlled by controlling the deposition rate to provide the desired final structure dimension. A wide variety of organic films is used as materials for these films. The inventive methods are applicable to any patterning technique used in lithography to provide a reduction in pattern sizes. Examples of the applicable device levels include the production of gate layers, ion implantation of active device layers and substantive metal layers, dielectric patterning, interconnect processes produced by damascene, dual damascene, backend packaging layers, and devices requiring multiple layers deposited by electrodeposition, CVD or sputtering. The inventive methods are useful for providing highly conformal coatings on large surface substrates having super submicron (i.e., 0.15 nullm or smaller) features. The process is environmentally friendly and relatively low cost compared to other options.

    Abstract translation: 提供了通过各种各样的沉积工艺将薄的,均匀的共形有机聚合物膜应用于光刻图案衬底的新方法。 本发明的方法导致平版印刷图案中间隙的缩小,从而产生更小的尺寸。 通过控制沉积速率以提供期望的最终结构尺寸来选择性地控制图案收缩量。 使用各种有机薄膜作为这些薄膜的材料。 本发明的方法适用于在光刻中使用的任何图案化技术以提供图案尺寸的减小。 可应用的器件级别的实例包括栅极层的生产,有源器件层的离子注入和实质金属层,电介质图案化,由镶嵌生成的互连工艺,双镶嵌,后端封装层以及需要通过电沉积沉积多层的器件 或溅射。 本发明的方法可用于在具有超亚微米(即0.15μm或更小)特征的大表面基底上提供高保形涂层。 与其他选项相比,该过程是环保的,成本相对较低。

    Anti-reflective coating compositions comprising polymerized aminoplasts

    公开(公告)号:US20030065164A1

    公开(公告)日:2003-04-03

    申请号:US10003558

    申请日:2001-10-24

    CPC classification number: H04B1/403 C08L61/28 G02B1/111 H04B1/30

    Abstract: Improved anti-reflective coating compositions for use in integrated circuit manufacturing processes and methods of forming these compositions are provided. Broadly, the compositions are formed by heating a solution comprising a compound including specific compounds (e.g., alkoxy alkyl melamines, alkoxy alkyl benzoguanamines) under acidic conditions so as to polymerize the compounds and form polymers having an average molecular weight of at least about 1,000 Daltons. The monomers of the resulting polymers are joined to one another via linkage groups (e.g., nullCH2null, nullCH2nullOnullCH2null) which are bonded to nitrogen atoms on the respective monomers. The polymerized compound is mixed with a solvent and applied to a substrate surface after which it is baked to form an anti-reflective layer. The resulting layer has high k values and can be formulated for both conformal and planar applications.

    DIFFERENTIAL CURRENT LIMITING FOR VOLTAMMETRY SENSOR LIFETIME EXTENSION

    公开(公告)号:US20240003845A1

    公开(公告)日:2024-01-04

    申请号:US17855866

    申请日:2022-07-01

    CPC classification number: G01N27/4163 G01N27/48

    Abstract: In one embodiment, a voltammetry sensor measurement system includes one or more potentiostats configured to transmit an electrical input to a working electrode of a voltammetry sensor and to measure an electrical output from the voltammetry sensor in response to the electrical input, the electrical input including a square wave electrical input, the measured electrical output including a differential current through the working electrode. A controller is coupled with the potentiostats to monitor, in real time, the differential current through the working electrode. The controller is configured to determine if the monitored differential current will exceed a preset differential current threshold of the voltammetry sensor, using a predictive algorithm based on the monitored differential current, before the differential current reaches the threshold; and to generate a signal when the monitored differential current is determined to exceed the threshold, to preserve the voltammetry sensor before the differential current reaches the threshold.

    ARSENIC DETECTOR AND METHOD OF USE
    26.
    发明公开

    公开(公告)号:US20230176003A1

    公开(公告)日:2023-06-08

    申请号:US17856687

    申请日:2022-07-01

    CPC classification number: G01N27/301 G01N27/333 G01N33/1813

    Abstract: Composites comprising metal-oxide-functionalized carbon nanotubes with metal nanoparticles deposited thereon are provided. These composites can be used as a working electrode in an electrochemical sensor to detect arsenite in aqueous solutions. The composite can electrochemically reduce As3+ to As0 due to increasing adsorption capability. In one embodiment, Au nanoparticles are deposited on the TiOx/CNT electrode to facilitate the adsorption of As3+ on the electrode surface for further electrochemical reduction process. Square wave voltammetry (SWV) is performed to detect the electrochemical reduction of arsenite in water.

    IS-FET NITRATE SENSOR AND METHOD OF USE

    公开(公告)号:US20230003684A1

    公开(公告)日:2023-01-05

    申请号:US17856932

    申请日:2022-07-01

    Abstract: A carbon nanotube (CNT) ion-selective field effect transistor (IS-FET) integrated device is used to detect nitrate ion in water. The device is operated as an IS-FET sensor, holding the measured potential between the drain electrode and an external reference electrode constant with a potentiometric circuit. Transduction occurs by changes in the effective CNT film gate potential with changes in the phase boundary potential of an ion-selective membrane (ISM) film. Moreover, the nitrate ISM film makes the device highly selective towards nitrate sensing. This printable IS-FET nitrate sensor enables real-time and high-resolution measurements and recording of nitrate ion in water at low cost.

    Underlayers for EUV lithography
    28.
    发明授权

    公开(公告)号:US11361967B2

    公开(公告)日:2022-06-14

    申请号:US16999223

    申请日:2020-08-21

    Abstract: New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

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