Abstract:
Probes with fiducial marks, probe systems including the same, and associated methods. The probes include a beam portion and a probe tip that is configured to contact a device under test (DUT), and further include a fiducial mark formed on the beam portion that is configured to facilitate alignment of the probe and the DUT. The fiducial mark is configured to be visible to an optical assembly, and is in focus to the optical assembly within a depth of field of the optical assembly that is smaller than a depth of field over which the beam portion is in focus to the optical assembly. The methods include methods of utilizing and/or manufacturing the probes.
Abstract:
In a method and a device for testing a test substrate under defined thermal conditions, a substrate that is to be tested is held by a temperature-controllable chuck and is set to a defined temperature; the test substrate is positioned relative to test probes by at least one positioning device; and the test probes make contact with the test substrate for testing purposes. At least one component of the positioning device that is present in the vicinity of the temperature-controlled test substrate is set to a temperature that is independent of the temperature of the test substrate by a temperature-controlling device, and this temperature is held constant.
Abstract:
Systems and methods for on-wafer dynamic testing of electronic devices. The systems include a probe head assembly, a probe-side contacting structure, a chuck, and a chuck-side contacting structure. The probe head assembly includes a probe configured to electrically contact a first side of a device under test (DUT). The probe-side contacting structure includes a probe-side contacting region. The chuck includes an electrically conductive support surface configured to support a substrate that includes the DUT and to electrically contact a second side of the DUT. The probe head assembly and the chuck are configured to translate relative to one another to selectively establish electrical contact between the probe and the DUT. The chuck-side contacting structure includes a chuck-side contacting region that is in electrical communication with the electrically conductive support surface and opposed to the probe-side contacting structure. The methods may include methods of operating the system or systems.
Abstract:
Resilient electrical interposers that may be utilized to form a plurality of electrical connections between a first device and a second device, as well as systems that may utilize the resilient electrical interposers and methods of use and/or fabrication thereof. The resilient electrical interposers may include a resilient dielectric body with a plurality of electrical conduits contained therein. The plurality of electrical conduits may be configured to provide a plurality of electrical connections between a first surface of the electrical interposer and/or the resilient dielectric body and a second, opposed, surface of the electrical interposer and/or the resilient dielectric body. The systems and methods disclosed herein may provide for improved vertical compliance, improved contact force control, and/or improved dimensional stability of the resilient electrical interposers.
Abstract:
A prober for testing devices in a repeat structure on a substrate is provided with a probe holder plate, probe holders mounted on the plate, and a test probe associated with each holder. Each test probe is displaceable via a manipulator connected to a probe holder, and a substrate carrier fixedly supports the substrate. Testing of devices, which are situated in a repeat structure on a substrate, in sequence without a substrate movement and avoiding individual manipulation of the test probes in relation to the contact islands on the devices, is achieved in that the probe holders are fastened on a shared probe holder plate and the probe holder plate is moved in relation to the test substrate.
Abstract:
Disclosed systems and methods for testing a device under test (DUT) with a probe system are selected to test a DUT at a temperature below the dew point of the ambient environment surrounding the probe system. Probe systems include a measurement chamber configured to isolate a cool, dry testing environment and a measurement chamber door configured to selectively isolate the internal volume of the measurement chamber. When a DUT, that is or is included on a substrate, is tested at a low temperature, systems and methods are selected to heat the substrate in a dry environment, at least partially isolated from the measurement chamber, to at least a temperature above the dew point and/or the frost point of the ambient environment.
Abstract:
Probe systems and methods are disclosed herein. The methods include directly measuring a distance between a first manipulated assembly and a second manipulated assembly, contacting first and second probes with first and second contact locations, providing a test signal to an electrical structure, and receiving a resultant signal from the electrical structure. The methods further include characterizing at least one of a probe system and the electrical structure based upon the distance. In one embodiment, the probe systems include a measurement device configured to directly measure a distance between a first manipulated assembly and a second manipulated assembly. In another embodiment, the probe systems include a probe head assembly including a platen, a manipulator operatively attached to the platen, a vector network analyzer (VNA) extender operatively attached to the manipulator, and a probe operatively attached to the VNA extender.
Abstract:
A chuck for testing an integrated circuit includes an upper conductive layer having a lower surface and an upper surface suitable to support a device under test. An upper insulating layer has an upper surface at least in partial face-to-face contact with the lower surface of the upper conductive layer, and a lower surface. A middle conductive layer has an upper surface at least in partial face-to-face contact with the lower surface of the upper insulating layer, and a lower surface.
Abstract:
Wafer-handling end effectors and semiconductor manufacturing devices that include and/or are utilized with wafer-handling end effectors are disclosed herein. The end effectors include an end effector body and a plurality of wafer-contacting surfaces that is supported by the end effector body and configured to form an at least partially face-to-face contact with a wafer. The end effectors further include a vacuum distribution manifold that extends between a robot-proximal end of the end effector body and the plurality of wafer-contacting surfaces. The end effectors also include a plurality of vacuum openings that is defined within the plurality of wafer-contacting surfaces and extends between the plurality of wafer-contacting surfaces and the vacuum distribution manifold. The end effectors further include a plurality of sealing structures each of which is associated with a respective one of the plurality of wafer-contacting surfaces.
Abstract:
Resilient electrical interposers that may be utilized to form a plurality of electrical connections between a first device and a second device, as well as systems that may utilize the resilient electrical interposers and methods of use and/or fabrication thereof. The resilient electrical interposers may include a resilient dielectric body with a plurality of electrical conduits contained therein. The plurality of electrical conduits may be configured to provide a plurality of electrical connections between a first surface of the electrical interposer and/or the resilient dielectric body and a second, opposed, surface of the electrical interposer and/or the resilient dielectric body. The systems and methods disclosed herein may provide for improved vertical compliance, improved contact force control, and/or improved dimensional stability of the resilient electrical interposers.