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    METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE USING BOND PAD DAM AND WAVELENGTH CONVERSION LAYERS
    21.
    发明申请
    METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE USING BOND PAD DAM AND WAVELENGTH CONVERSION LAYERS 审中-公开
    使用BOND PAD DAM和WAVELENGTH转换层制造发光二极管（LED）的方法

    公开(公告)号：US20140048766A1

    公开(公告)日：2014-02-20

    申请号：US13585968

    申请日：2012-08-15

    申请人： Chen-Fu CHU ,  Feng-Hsu FAN

    发明人： Chen-Fu CHU ,  Feng-Hsu FAN

    IPC分类号： H01L33/06 ,  H01L33/50

    CPC分类号： H01L33/505 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2924/12041 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A method for fabricating light emitting diode (LED) dice includes the step of forming a light emitting diode (LED) die having a multiple quantum well (MQW) layer configured to emit electromagnetic radiation, and a confinement layer on the multiple quantum well (MQW) layer having a wire bond pad. The method also includes the steps of forming a dam on the wire bond pad configured to protect a wire bond area on the wire bond pad, forming an adhesive layer on the confinement layer and the wire bond pad with the dam protecting the wire bond area, and forming a wavelength conversion layer on the adhesive layer. A light emitting diode (LED) die includes the dam on the wire bond pad, the adhesive layer on the confinement layer and the wavelength conversion layer on the adhesive layer configured to convert the electromagnetic radiation to a second spectral region.

    摘要翻译： 一种用于制造发光二极管（LED）裸片的方法包括形成具有配置成发射电磁辐射的多量子阱（MQW）层的发光二极管（LED）裸片的步骤，以及多量子阱上的约束层 ）层。 该方法还包括以下步骤：在引线接合焊盘上形成阻挡层，其构造成保护引线接合焊盘上的引线接合区域，在限制层上形成粘合剂层，并且引线接合焊盘与保护引线接合区域的焊盘接合， 并在粘合剂层上形成波长转换层。 发光二极管（LED）管芯包括引线接合焊盘上的堤坝，约束层上的粘合剂层和粘合剂层上的波长转换层，其被配置为将电磁辐射转换成第二光谱区域。

    PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES
    26.
    发明申请
    PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
    金属器件外延结构的保护

    公开(公告)号：US20120074384A1

    公开(公告)日：2012-03-29

    申请号：US13310552

    申请日：2011-12-02

    申请人： FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

    发明人： FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

    IPC分类号： H01L33/06

    CPC分类号： H01L33/0079 ,  H01L33/405 ,  H01L33/44 ,  H01L33/64

    摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

    摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

    LIGHT EMITTING DIODE DEVICE
    27.
    发明申请
    LIGHT EMITTING DIODE DEVICE 有权
    发光二极管装置

    公开(公告)号：US20110114966A1

    公开(公告)日：2011-05-19

    申请号：US12939142

    申请日：2010-11-03

    申请人： Wen-Huang Liu ,  Li-Wei Shan ,  Chen-Fu Chu

    发明人： Wen-Huang Liu ,  Li-Wei Shan ,  Chen-Fu Chu

    IPC分类号： H01L33/32 ,  H01L33/60

    CPC分类号： H01L33/60 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405

    摘要： A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

    摘要翻译： 具有向外定位的金属电极的高亮度垂直发光二极管（LED）装置。 LED器件通过以下方式形成：使用诸如物理气相沉积（PVD），化学气相沉积（CVD），蒸发，电镀或沉积法的沉积方法在LED外延结构的表面的边缘上形成金属电极 其任何组合; 然后执行包装过程。 LED的组成可以是氮化物，磷化物或砷化物。 本发明的LED具有以下优点：提高电流扩散性能，降低金属电极的光吸收，增加亮度，提高效率，从而提高能量效率。 金属电极位于器件的边缘和发光侧。 金属电极具有两个侧壁，其中一个侧壁可以从另一个侧壁接收来自该装置的更多的发射光。

    VERTICAL LIGHT EMITTING DIODE HAVING AN OUTWARDLY DISPOSED ELECTRODE
    28.
    发明申请
    VERTICAL LIGHT EMITTING DIODE HAVING AN OUTWARDLY DISPOSED ELECTRODE 有权
    具有外部电极的垂直发光二极管

    公开(公告)号：US20110108851A1

    公开(公告)日：2011-05-12

    申请号：US12939984

    申请日：2010-11-04

    申请人： Chen-Fu Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng

    发明人： Chen-Fu Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng

    IPC分类号： H01L33/32 ,  H01L33/62

    CPC分类号： H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.

    摘要翻译： 本发明涉及一种具有向外设置的电极的垂直发光二极管（VLED），垂直发光二极管包括导电基底，形成在导电基底上的半导体外延结构，形成在半导体外延结构周边的钝化层 以及形成在钝化层上并与半导体外延结构的上表面的边缘接触的导电框架，使得导电框架电连接到半导体外延结构。

    Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
    29.
    发明授权
    Method of making light-emitting diodes (LEDs) with improved light extraction by roughening 有权
    通过粗糙化制造具有改进的光提取的发光二极管（LED）的方法

    公开(公告)号：US07563625B2

    公开(公告)日：2009-07-21

    申请号：US11618468

    申请日：2006-12-29

    申请人： Chuong Anh Tran ,  Trung Tri Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

    发明人： Chuong Anh Tran ,  Trung Tri Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  H01L33/0095

    摘要： Methods for fabricating a semiconductor light-emitting diode (LED) device with increased light extraction are provided. The method generally includes applying a mask to a surface of an LED wafer, etching the surface of the LED wafer such that etched pits are formed in the surface, removing the mask, and roughening or texturing the surface of the LED wafer including the etched pits. In this manner, the surface area of the LED device may be increased when compared to a conventional LED device, and less emitted light may experience total internal reflection (TIR) according to Snell's law, thereby leading to increased light extraction.

    摘要翻译： 提供了用于制造具有增加的光提取的半导体发光二极管（LED）装置的方法。 该方法通常包括将掩模施加到LED晶片的表面，蚀刻LED晶片的表面，使得在表面形成蚀刻的凹坑，去除掩模，以及使包含蚀刻凹坑的LED晶片的表面变粗糙或纹理化 。 以这种方式，与传统的LED器件相比，LED器件的表面积可以增加，并且较少的发射光可以根据斯涅耳定律经历全内反射（TIR），从而导致增加的光提取。