公开(公告)号：US09025132B2

公开(公告)日：2015-05-05

申请号：US13406828

申请日：2012-02-28

Applicant: Sang-Hyun Yun ,  Cha-Dong Kim ,  Jung-In Park ,  Su-Yeon Sim ,  Hi-Kuk Lee

Inventor： Sang-Hyun Yun ,  Cha-Dong Kim ,  Jung-In Park ,  Su-Yeon Sim ,  Hi-Kuk Lee

IPC: G03B27/54 ,  G03B27/42 ,  G03F7/20

CPC classification number: G03F7/70275

Abstract: A digital exposure apparatus includes a displaceable stage, a light source part, a digital micro mirror part and a micro lens part. A substrate is disposed on the stage. The light source part generates a first light. The digital micro mirror part is disposed over the stage. The digital micro mirror part includes a plurality of digital micro mirrors. The digital micro mirror converts the first light into one or more second light beams. The micro lens part is disposed between the stage and the digital micro mirror part and includes a plurality of micro lenses. The micro lenses convert the one or more second light beams into one or more third light beams which are irradiated upon the substrate. The third light has an oval cross sectional shape.

Abstract translation: 数字曝光装置包括可位移台，光源部分，数字微镜部分和微透镜部分。 衬底设置在平台上。 光源部分产生第一光。 数字微镜部分设置在舞台上。 数字微镜部分包括多个数字微镜。 数字微镜将第一光转换成一个或多个第二光束。 微透镜部分设置在平台和数字微镜部分之间并且包括多个微透镜。 微透镜将一个或多个第二光束转换成照射在基板上的一个或多个第三光束。 第三个光具有椭圆形横截面形状。

公开(公告)号：US08625109B2

公开(公告)日：2014-01-07

申请号：US12902745

申请日：2010-10-12

Applicant: Sang-Hyun Yun ,  Hi-Kuk Lee ,  Sang-Woo Bae ,  Cha-Dong Kim ,  Jung-In Park

Inventor： Sang-Hyun Yun ,  Hi-Kuk Lee ,  Sang-Woo Bae ,  Cha-Dong Kim ,  Jung-In Park

IPC: G01B11/14 ,  G03B27/32 ,  G03F9/00 ,  G03C5/00

CPC classification number: G01B11/14 ,  G03F7/70291 ,  G03F7/70475

Abstract: An apparatus and a method for determining an overlap distance of an optical head is disclosed. Positions and light amount distributions of each light spot can be measured, which may be provided from an optical head to a substrate. Gaussian distribution may be applied to the positions and the light amount distributions to calculate a compensation model of each of the light spots. A first accumulated light amount corresponding to each first area of the substrate may be calculated if the optical head is scanning along a first direction of the substrate using the compensation model. A second accumulated light amount corresponding to each second area overlapped with the each first area is calculated if the optical head is scanning along the first direction, which is moved in a second direction by a first distance using the compensation model. An overlap distance may be determined based on a uniformity of summations of the first and second accumulated light amount.

Abstract translation: 公开了一种用于确定光学头的重叠距离的装置和方法。 可以测量每个光点的位置和光量分布，其可以从光学头到基底提供。 高斯分布可以应用于位置和光量分布，以计算每个光点的补偿模型。 如果光头使用补偿模型沿着衬底的第一方向扫描，则可以计算对应于衬底的每个第一区域的第一累积光量。 如果光头沿着使用补偿模型在第二方向上以第一距离移动的第一方向进行扫描，则计算与每个第一区域重叠的每个第二区域对应的第二累积光量。 可以基于第一和第二累积光量的相加的均匀性来确定重叠距离。

公开(公告)号：US08557620B2

公开(公告)日：2013-10-15

申请号：US12421555

申请日：2009-04-09

Applicant: Pil-Soon Hong ,  Jung-In Park ,  Hi-Kuk Lee

Inventor： Pil-Soon Hong ,  Jung-In Park ,  Hi-Kuk Lee

IPC: H01L21/00

CPC classification number: H01L27/1288 ,  H01L27/3248 ,  H01L2227/323

Abstract: Provided is a method of manufacturing a display substrate. In the method, a gate line, a data line crossing the gate line, and a switching device are formed on a base substrate. A passivation layer, a first resist layer and a second resist layer are formed on the base substrate. The first resist layer and the second resist layer are patterned to form a resist pattern and an etch-stop pattern, the etch-stop pattern having a sidewall protruding from a sidewall of the resist pattern. A portion of the passivation layer is removed to form a contact hole on a drain electrode of the switching device. A pixel electrode electrically connected to the switching device through the contact hole is formed. Thus, an undercut between an etch-stop pattern and a resist pattern may be more easily formed without over-etching a passivation layer.

Abstract translation: 提供一种制造显示基板的方法。 在该方法中，在基底基板上形成栅极线，与栅极线交叉的数据线以及开关元件。 在基底基板上形成钝化层，第一抗蚀剂层和第二抗蚀剂层。 图案化第一抗蚀剂层和第二抗蚀剂层以形成抗蚀剂图案和蚀刻停止图案，该蚀刻停止图案具有从抗蚀剂图案的侧壁突出的侧壁。 去除钝化层的一部分以在开关器件的漏电极上形成接触孔。 形成通过接触孔与开关装置电连接的像素电极。 因此，可以更容易地形成蚀刻停止图案和抗蚀剂图案之间的底切，而不会过度蚀刻钝化层。

公开(公告)号：US08519393B2

公开(公告)日：2013-08-27

申请号：US12823043

申请日：2010-06-24

Applicant: Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

Inventor： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

IPC: H01L27/146 ,  H01L29/786

CPC classification number: H01L29/66765 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。 半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。 源电极和漏极设置在半导体的第二部分和栅极绝缘层上。

公开(公告)号：US08477288B2

公开(公告)日：2013-07-02

申请号：US12906623

申请日：2010-10-18

Applicant: Sang-Hyun Yun ,  Hi-Kuk Lee ,  Sang-Woo Bae ,  Cha-Dong Kim ,  Jung-In Park

Inventor： Sang-Hyun Yun ,  Hi-Kuk Lee ,  Sang-Woo Bae ,  Cha-Dong Kim ,  Jung-In Park

IPC: G03B27/54 ,  G03B27/42

CPC classification number: G03B27/526 ,  G03B27/52 ,  G03F7/70291 ,  G03F7/70508 ,  G03F7/70541

Abstract: A digital exposure method and a digital exposure device for performing the method are disclosed. In the method, a graphic data system file is produced in correspondence with each of a plurality of patterns formed on a substrate. Then, a digital micromirror device on/off data is generated from the graphic data system file. Then, the substrate is exposed in response to the digital micromirror device on/off data. Thus, at least a first exposure for forming a first pattern of a display panel, and a second exposure for forming identification numbers of a substrate and each display panel and removing an edge portion of the substrate may be simultaneously performed, to simplify the exposure process decrease costs.

Abstract translation: 公开了一种用于执行该方法的数字曝光方法和数字曝光装置。 在该方法中，与形成在基板上的多个图案中的每一个对应地生成图形数据系统文件。 然后，从图形数据系统文件生成数字微镜装置开/关数据。 然后，响应于数字微镜装置的开/关数据曝光基板。 因此，可以同时执行用于形成显示面板的第一图案的第一曝光和用于形成基板和每个显示面板的识别号和去除基板的边缘部分的第二曝光，以简化曝光过程 降低成本

公开(公告)号：US08257905B2

公开(公告)日：2012-09-04

申请号：US12685545

申请日：2010-01-11

Applicant: Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

Inventor： Yeong-Beom Lee ,  Hi-Kuk Lee ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

IPC: G03F7/004 ,  G03F7/30

CPC classification number: H01L27/1288 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/40 ,  H01L27/1214

Abstract: A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:

Abstract translation: 提供了制造其中使用的薄膜晶体管基板和负型光致抗蚀剂组合物的方法，其可以降低图案劣化。 制造薄膜晶体管基板的方法包括在基板上形成由导电材料构成的导电膜，在导电膜上形成由负性光致抗蚀剂组合物构成的蚀刻图案，并使用该导电膜蚀刻导电膜形成导电图案 蚀刻图案作为蚀刻掩模，其中负性光致抗蚀剂组合物包含10-50重量份的包含可溶于碱显影液的羟基的酚醛清漆树脂，0.5-10重量份由 按照下式（1），将0.5-10重量份由下式（2）表示的第二光酸反应产物，1-20重量份的交联剂和10-90重量份的溶剂 ：

公开(公告)号：US20110286818A1

公开(公告)日：2011-11-24

申请号：US13110435

申请日：2011-05-18

Applicant: Ul Tae Kim ,  Sang Hyun Park ,  Hi Kuk Lee ,  Sang Don Jang

Inventor： Ul Tae Kim ,  Sang Hyun Park ,  Hi Kuk Lee ,  Sang Don Jang

IPC: B65G49/05

CPC classification number: H01L21/6734 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/68742

Abstract: According to an example embodiment a substrate processing apparatus includes a supporting unit, a lifting unit on at least a side of the supporting unit, a tray supported by the lifting unit, and a transfer unit configured to transfer a substrate to the tray such that the substrate is positioned on the tray. The lifting unit moves the tray up and down to load or unload the substrate located on the tray on or from the supporting unit.

Abstract translation: 根据示例性实施例，基板处理装置包括支撑单元，在支撑单元的至少一侧上的提升单元，由提升单元支撑的托盘以及被配置为将基板传送到托盘的转移单元， 衬底位于托盘上。 提升单元上下移动托盘，以将位于托盘上的基板装载或卸载到支撑单元上或从支撑单元卸载。

公开(公告)号：US20110236825A1

公开(公告)日：2011-09-29

申请号：US13010688

申请日：2011-01-20

Applicant: Jung-In PARK ,  Hi-Kuk Lee ,  Sang-Hyun Yun ,  Cha-Dong Kim ,  Shi-Jin Sung ,  Sung-Yeol Jin ,  Sang-Tae Kim ,  Yong-Il Kim ,  Eun-Sang Lee

Inventor： Jung-In PARK ,  Hi-Kuk Lee ,  Sang-Hyun Yun ,  Cha-Dong Kim ,  Shi-Jin Sung ,  Sung-Yeol Jin ,  Sang-Tae Kim ,  Yong-Il Kim ,  Eun-Sang Lee

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0226

Abstract: In a photoresist composition suitable for forming a photoresist pattern having a high profile angle, and a method of forming a photoresist pattern using the same, the photoresist composition includes an alkali-soluble resin, a quinone diazide containing compound, a compound represented by Formula 1, and a solvent: wherein R1, R2 and R3 are independently H, C1-4 alkyl, C2-4 alkenyl, C3-8 cycloalkyl, or C6-12 aryl.

Abstract translation: 在适于形成具有高轮廓角的光致抗蚀剂图案的光致抗蚀剂组合物中，以及使用其形成光致抗蚀剂图案的方法，光致抗蚀剂组合物包括碱溶性树脂，含醌二化合物，由式1表示的化合物 和溶剂：其中R 1，R 2和R 3独立地为H，C 1-4烷基，C 2-4烯基，C 3-8环烷基或C 6-12芳基。

公开(公告)号：US20110230019A1

公开(公告)日：2011-09-22

申请号：US12900936

申请日：2010-10-08

Applicant: Sang-Hyun YUN ,  Cha-Dong KIM ,  Jung-In PARK ,  Hi-Kuk LEE

Inventor： Sang-Hyun YUN ,  Cha-Dong KIM ,  Jung-In PARK ,  Hi-Kuk LEE

IPC: H01L21/336

CPC classification number: H01L27/1288 ,  H01L27/1214

Abstract: An approach for patterning and etching without a mask is provided in a manufacturing a thin-film transistor, a gate electrode, a gate insulating layer, a semiconductor layer, an ohmic contact layer and source metal layer of a substrate. A first photoresist pattern including a first photo pattern and a second photo pattern is formed using a digital exposure device by generating a plurality of spot beams, the first photo pattern is formed to a first region of the base substrate and has a first thickness, and the second photo pattern is formed to a second region adjacent to the first region, and has a second thickness and a width in a range of about 50% to about 60% of a diameter of the spot beam. The source metal layer is patterned to form a source electrode and a drain electrode, and the source electrode and the drain electrode are spaced apart from each other in the first region of an active pattern.

Abstract translation: 在制造薄膜晶体管，栅极电极，栅极绝缘层，半导体层，欧姆接触层和源极金属层的衬底的制造中提供了用于没有掩模的图案化和蚀刻的方法。 使用数字曝光装置通过产生多个点光来形成包括第一照片图案和第二照片图案的第一光致抗蚀剂图案，第一照片图案形成于基底基板的第一区域并具有第一厚度，并且 第二照片图案形成在与第一区域相邻的第二区域上，并且具有第二厚度和在点光束直径的约50％至约60％的范围内的宽度。 图案化源极金属层以形成源电极和漏电极，并且源电极和漏电极在活性图案的第一区域中彼此间隔开。

公开(公告)号：US07989136B2

公开(公告)日：2011-08-02

申请号：US12059113

申请日：2008-03-31

Applicant: Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Yoon ,  Ki-Hyuk Koo

Inventor： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Yoon ,  Ki-Hyuk Koo

IPC: G03F7/028 ,  G03F7/038

CPC classification number: G03F7/038 ,  Y10S430/121 ,  Y10S430/123 ,  Y10S430/128

Abstract: A photoresist composition comprises about 0.5 to about 20 parts by weight of a photo-acid generator, about 10 to about 70 parts by weight of a novolac resin containing a hydroxyl group, about 1 to about 40 parts by weight of a cross-linker that comprises an alkoxymethylmelamine compound, and about 10 to about 150 parts by weight of a solvent.

Abstract translation: 光致抗蚀剂组合物包含约0.5至约20重量份的光酸发生剂，约10至约70重量份的含有羟基的酚醛清漆树脂，约1至约40重量份的交联剂， 包括烷氧基甲基蜜胺化合物和约10至约150重量份的溶剂。