Electrolytic capacitor
    21.
    发明授权
    Electrolytic capacitor 有权
    电解电容器

    公开(公告)号:US06885547B2

    公开(公告)日:2005-04-26

    申请号:US10813332

    申请日:2004-03-30

    IPC分类号: C08G61/12 H01G9/02 H01G9/14

    CPC分类号: H01G9/02

    摘要: A dielectric oxide film-having anode foil and a cathode foil put opposite to each other via a separator therebetween are coiled up to construct a capacitor device. In this, the separator is coated with an electroconductive polymer formed through chemical oxidation polymerization of a polymerizing monomer in a solution that contains at least a non-transition metal-based oxidizing agent and an organic acid compound. Even when the electrolytic capacitor with the capacitor device is driven in a high-humidity atmosphere and a large amount of water penetrates into it, the capacitor is free from a trouble of dedoping, and therefore keeps its high voltage-proofness and leak current stability. The electrolytic capacitor is resistant to heat and its ESR is low in a high-frequency region.

    摘要翻译: 具有通过隔膜间隔开的彼此相对的具有阳极箔和阴极箔的电介质氧化膜卷起来构成电容器装置。 在此,分离器涂覆有通过聚合单体在至少含有非过渡金属基氧化剂和有机酸化合物的溶液中进行化学氧化聚合形成的导电聚合物。 即使当电容器装置的电解电容器在高湿度气氛中被驱动并且大量的水渗入其中时,电容器也没有脱掺杂的问题,因此保持其高的电压和漏电流的稳定性。 电解电容器耐高温,其高频区域的ESR低。

    Pulse pattern generating apparatus
    22.
    发明申请
    Pulse pattern generating apparatus 失效
    脉冲图案生成装置

    公开(公告)号:US20050058190A1

    公开(公告)日:2005-03-17

    申请号:US10897073

    申请日:2004-07-23

    CPC分类号: G01R31/3171 G01R31/31928

    摘要: An object of this invention is to realize a pulse pattern generating apparatus that outputs a test signal of high waveform quality even when the shape of an eye pattern is changed. This invention is an improvement of a pulse pattern generating apparatus that generates a test signal of a predetermined pattern by using plural digital-analog converters and outputs the test signal to a test subject. The apparatus includes: a parameter setting unit for setting values of plural parameters that determine the shape of an eye pattern of the test signal; a storage unit for storing output values to the digital-analog converters corresponding to the values of the parameters; an arithmetic operation unit for calculating output values to the digital-analog converters from the values of the parameters from the parameter setting unit and the output values in the storage unit; and a voltage value setting unit for setting, for the digital-analog converters, voltage values to be outputted from the digital-analog converters on the basis of the result of calculation by the arithmetic operation unit.

    摘要翻译: 本发明的一个目的是实现即使当眼图的形状改变时也输出高波形质量的测试信号的脉冲图形生成装置。 本发明是通过使用多个数模转换器生成预定模式的测试信号并将测试信号输出给测试对象的脉冲图案生成装置的改进。 该装置包括:参数设置单元,用于设置确定测试信号的眼图的形状的多个参数的值; 存储单元,用于根据参数的值存储对数模转换器的输出值; 算术运算单元,用于根据来自参数设定单元的参数值和存储单元中的输出值计算出数字模拟转换器的输出值; 以及电压值设定单元,用于根据算术运算单元的计算结果,对数模转换器设定从数模转换器输出的电压值。

    Method of correcting the phase and shading in a nuclear magnetic
resonance tomographic device
    23.
    发明授权
    Method of correcting the phase and shading in a nuclear magnetic resonance tomographic device 失效
    在核磁共振断层摄影装置中校正相位和阴影的方法

    公开(公告)号:US4713614A

    公开(公告)日:1987-12-15

    申请号:US831342

    申请日:1986-02-20

    CPC分类号: G01R33/565 G01R33/58

    摘要: A method of simultaneously correcting distortion in density due to uneven sensitivity of receiving coils, and location dependent phase distortion inherent in the system, wherein a phantom is scanned to determine echo signals, which echo signals are subjected to 2-dimensional inverse Fourier transformation, to obtain an image (Cij) and stored as it is in the form of a complex number, then the object to be examined is measured by similar operation to obtain an image (Oij) and wherein the image (Oij) is divided by computation with image (Cij) as follows .vertline.Sij.vertline.=.vertline.Oij.vertline./.vertline.Cij.vertline., by which equation computation is made to correct for density distortion, and wherein the angle of deviation is set as follows arg [Sij]=arg[Oij]-arg[Cij].ident.0, by which equation computation is made to correct for phase distortion. An image of the object is thus obtained which is corrected for density distortion and for phase distortion, by taking the real number part of the image Sij which is the determined image of the object.

    摘要翻译: 一种同时校正由于接收线圈的灵敏度不均匀引起的密度变形的方法以及系统中固有的位置相关相位失真的方法,其中扫描体模以确定回波信号经受二维傅里叶逆变换的回波信号, 获取图像(Cij)并以复数形式存储,然后通过类似的操作测量待检查对象以获得图像(Oij),并且其中图像(Oij)被图像计算分割 (Cij)如下| Sij| = | Oij| / | Cij|,通过该方程计算来校正密度失真,并且其中偏差角度被设置如下:arg [Sij] = arg [Oij] -arg [Cij] = 0,通过该方程计算来校正相位失真。 由此获得对象的图像,其通过获取作为对象的确定图像的图像Sij的实数部分来校正密度失真和相位失真。

    Nuclear magnetic resonance imaging device
    24.
    发明授权
    Nuclear magnetic resonance imaging device 失效
    核磁共振成像装置

    公开(公告)号:US4694250A

    公开(公告)日:1987-09-15

    申请号:US833224

    申请日:1986-02-24

    CPC分类号: G06F3/014 G01R33/50

    摘要: In a nuclear magnetic resonance imaging device, a pulse sequence is selected and a variance or standard deviation of a calculated image for T1, T2, .rho. is determined as a function of scan parameters from the theoretical equation of signal intensity in the pulse sequence and the variance in the values for T1, T2, .rho. to be measured and the original image. Scan parameters, with which the total sum of variance or standard deviation of the calculated image takes a minimum value, are determined as optimum values. An image is obtained from the optimum scan parameters to obtain a plurality of original images. A calculated image for T1, T2, .rho. is determined, based on the original images, whereby a calculated image of high quality is simultaneously obtained.

    摘要翻译: 在核磁共振成像装置中,选择脉冲序列,根据脉冲序列中的信号强度的理论方程式,将T1,T2,rho的计算图像的方差或标准偏差确定为扫描参数的函数, 要测量的T1,T2,rho值和原始图像的差异。 将计算出的图像的总方差或标准偏差的总和作为最小值的扫描参数确定为最佳值。 从最佳扫描参数获得图像以获得多个原始图像。 基于原始图像确定T1,T2,rho的计算图像,从而同时获得计算出的高质量图像。

    SUCTION APPARATUS, SEMICONDUCTOR DEVICE OBSERVATION DEVICE, AND SEMICONDUCTOR DEVICE OBSERVATION METHOD
    26.
    发明申请
    SUCTION APPARATUS, SEMICONDUCTOR DEVICE OBSERVATION DEVICE, AND SEMICONDUCTOR DEVICE OBSERVATION METHOD 有权
    吸收装置,半导体装置观测装置和半导体装置观测方法

    公开(公告)号:US20130088714A1

    公开(公告)日:2013-04-11

    申请号:US13701035

    申请日:2011-06-21

    IPC分类号: G01N21/95 G01N21/01

    摘要: A suction unit 10 includes a main body portion having a first surface 13 on which a semiconductor wafer W is arranged and a second surface 14 opposite to the first surface 13, and in which a through-hole 15 that penetrates through the first surface 13 and the second surface 14 is formed and a light transmitting portion having a light incident surface 16 and a light emitting surface 17, and which is fitted to the through-hole 15. Further, in the first surface 13, a first suction groove 13a for vacuum sucking the semiconductor wafer W to fix the semiconductor device D to the light incident surface 16 is formed, and in the second surface 14, a second suction groove 14a for vacuum sucking the solid immersion lens S to fix the solid immersion lens S to the light emitting surface 17 is formed.

    摘要翻译: 抽吸单元10包括主体部分,其具有布置半导体晶片W的第一表面13和与第一表面13相对的第二表面14,并且其中穿过第一表面13的通孔15和 形成第二表面14和具有光入射表面16和发光表面17并且安装到通孔15的透光部分。此外,在第一表面13中,具有用于真空的第一吸入槽13a 吸收半导体晶片W以将半导体器件D固定到光入射表面16,并且在第二表面14中,用于真空吸附固体浸没透镜S以将固体浸没透镜S固定到光的第二吸入槽14a 形成发光面17。

    Vertical plasma processing apparatus for semiconductor process
    27.
    发明授权
    Vertical plasma processing apparatus for semiconductor process 有权
    用于半导体工艺的垂直等离子体处理装置

    公开(公告)号:US08394200B2

    公开(公告)日:2013-03-12

    申请号:US12277344

    申请日:2008-11-25

    IPC分类号: C23C16/505

    摘要: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

    摘要翻译: 用于半导体工艺的垂直等离子体处理装置包括由具有绝缘内表面并与处理容器一体化的壳体限定的气密辅助室。 辅助室包括在垂直方向上在对应于多个目标基板的长度上延伸的等离子体产生区域。 具有绝缘表面的隔板位于处理场和等离子体产生之间。 隔板包括沿垂直方向设置在与多个目标基板相对应的长度上的气体通道。 在通过等离子体产生区域时排出处理气体,然后通过气体通道供给到处理区域。

    Pressure reduction process device, pressure reduction process method, and pressure regulation valve
    28.
    发明授权
    Pressure reduction process device, pressure reduction process method, and pressure regulation valve 失效
    减压工艺装置,减压工艺方法和压力调节阀

    公开(公告)号:US08051870B2

    公开(公告)日:2011-11-08

    申请号:US10563208

    申请日:2004-07-02

    申请人: Hiroyuki Matsuura

    发明人: Hiroyuki Matsuura

    IPC分类号: F16K51/02

    摘要: The object of the present invention is to provide a low pressure processing system having no possibility of leakage at a valve provided in an exhaust passage when the valve is closed, and capable of reducing a load of maintenance work. An exhaust pipe 3 connected to a reaction tube 1 is provided therein with a gate valve 4 for hermetically closing the exhaust passage. A purge gas is jetted, from jetting ports circumferentially arranged respectively in a valve seat and a valving element of the gate valve, into a gap between the valve seat and the valving element. This prevents foreign objects originated from a process gas from adhering to those surfaces of the valve seat and the valving element that face the gap between the valve seat and valving element, improving sealing capability of the gate valve.

    摘要翻译: 本发明的目的是提供一种低压处理系统,当阀门关闭时,在排气通道中设置的阀门上没有渗漏的可能性,并且能够减少维护工作的负担。 连接到反应管1的排气管3设置有用于气密地关闭排气通道的闸阀4。 喷射气体从分别在阀座和阀门的阀元件周向布置的喷射口喷射到阀座和阀元件之间的间隙中。 这防止了源自工艺气体的异物粘附到阀座和阀座元件的面对阀座和阀元件之间的间隙的表面,从而提高了闸阀的密封能力。

    Aluminum electrolytic capacitor
    29.
    发明授权
    Aluminum electrolytic capacitor 有权
    铝电解电容器

    公开(公告)号:US07990681B2

    公开(公告)日:2011-08-02

    申请号:US12300058

    申请日:2007-05-09

    IPC分类号: H01G9/00

    CPC分类号: H01G9/02 H01G9/045 H01G9/145

    摘要: An aluminum electrolytic capacitor having an excellent short-circuit resistance, high capacitance, long life, and low equivalent series resistance (ESR) is provided. For this purpose, the aluminum electrolytic capacitor includes a capacitor element having a positive electrode foil, a first separator, a negative electrode foil, and a second separator, which are sequentially laminated one on another and wound together. After the capacitor element is impregnated with a driving electrolyte solution and housed in a metallic case, an open end of the metallic case is sealed with a sealing material. A ratio of B/A, i.e. a ratio of total thickness B of the first and second separators after winding with respect to total thickness A of the first and second separators before winding, is set in the range from 0.5 to 0.8.

    摘要翻译: 提供具有优异的短路电阻,高电容,长寿命和低等效串联电阻(ESR)的铝电解电容器。 为此,铝电解电容器包括具有正电极箔,第一隔膜,负极箔和第二隔膜的电容器元件,它们依次层叠在一起并缠绕在一起。 在电容器元件浸渍驱动电解液并容纳在金属外壳中之后,金属外壳的开口端用密封材料密封。 B / A的比率,即卷绕后的第一和第二分离器的总厚度B与卷绕前的第一和第二分离器的总厚度A的比率设定在0.5〜0.8的范围内。

    CVD method in vertical CVD apparatus using different reactive gases
    30.
    发明授权
    CVD method in vertical CVD apparatus using different reactive gases 有权
    使用不同反应气体的立式CVD装置中的CVD法

    公开(公告)号:US07927662B2

    公开(公告)日:2011-04-19

    申请号:US12098315

    申请日:2008-04-04

    申请人: Hiroyuki Matsuura

    发明人: Hiroyuki Matsuura

    IPC分类号: C23C16/30

    摘要: A method of performing a CVD process on target substrates all together in a vertical CVD apparatus includes repeating, a plurality of times, first and second steps of supplying first and second reactive gases, respectively. The first reactive gas has a vapor pressure of 1.33 kPa or less, or a bond-dissociation energy of 250 kJ/mol or less. The second reactive gas has a vapor pressure of 2.66 kPa or more, and a bond-dissociation energy of 250 kJ/mol or more. The first reactive gas is supplied from a first delivery hole disposed at a bottom of the process chamber. The second reactive gas is supplied from a plurality of second delivery holes arrayed in a vertical direction at a position adjacent to edges of the target substrates entirely over a vertical length of the target substrates stacked at intervals.

    摘要翻译: 在垂直CVD装置中一起对靶基板进行CVD工艺的方法包括分别重复多次第一和第二反应气体的供给步骤。 第一反应气体的蒸气压为1.33kPa以下,键解离能为250kJ / mol以下。 第二反应气体的蒸气压为2.66kPa以上,键解离能为250kJ / mol以上。 第一反应气体从设置在处理室底部的第一输送孔供给。 第二反应气体从在靶基板的边缘附近的位置处沿垂直方向排列的多个第二输送孔全部在间隔堆叠的目标基板的垂直长度上供给。