公开(公告)号：US20070172999A1

公开(公告)日：2007-07-26

申请号：US11702057

申请日：2007-02-05

Applicant: Do-young Kim ,  Wan-jun Park ,  Young-soo Park ,  June-key Lee ,  Yo-sep Min ,  Jang-yeon Kwon ,  Sun-ae Seo ,  Young-min Choi ,  Soo-doo Chae

Inventor： Do-young Kim ,  Wan-jun Park ,  Young-soo Park ,  June-key Lee ,  Yo-sep Min ,  Jang-yeon Kwon ,  Sun-ae Seo ,  Young-min Choi ,  Soo-doo Chae

IPC: H01L21/84

CPC classification number: H01L29/78603 ,  G02F1/133305 ,  G02F1/136227 ,  G02F2201/50 ,  H01L23/3192 ,  H01L24/24 ,  H01L24/82 ,  H01L27/1214 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/66757 ,  H01L51/5253 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2251/5338 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

Abstract translation: 在柔性基板上实现的薄膜半导体器件，使用该薄膜半导体器件的电子器件及其制造方法中，薄膜半导体器件和电子器件包括柔性基板，形成在柔性基板上的半导体芯片 以及密封半导体芯片的保护盖。 通过使用保护盖，可以提高薄膜半导体器件对由于基板弯曲引起的应力的耐久性。

公开(公告)号：US07002193B2

公开(公告)日：2006-02-21

申请号：US10270521

申请日：2002-10-16

Applicant: June-key Lee ,  Young-soo Park

Inventor： June-key Lee ,  Young-soo Park

IPC: H01L29/72

CPC classification number: H01L27/11507 ,  H01L21/76895 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/75

Abstract: A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.

公开(公告)号：US20050169048A1

公开(公告)日：2005-08-04

申请号：US11097157

申请日：2005-04-04

Applicant: Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

Inventor： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

IPC: G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/788 ,  H01L29/792 ,  H01L43/08 ,  G11C11/00

CPC classification number: H01L27/228 ,  B82Y10/00

Abstract: A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

Abstract translation: 单晶体管型磁随机存取存储器件及其操作和制造方法，其中单晶体管型磁随机存取存储器件包括衬底，彼此间隔开的第一和第二掺杂区，栅极电介质层 在第一和第二掺杂区域之间的半导体衬底的一部分，栅极电介质层上的磁性隧道结，在与第二掺杂区域相同的第一方向延伸的磁性隧道结上的字线，位线连接到 垂直于第一方向的第二方向上的第一掺杂区域和覆盖栅极介电层，磁性隧道结和字线的绝缘层。 单晶体管型磁随机存取存储器件具有简单的电路结构，寿命长，易于制造。

公开(公告)号：US06815783B2

公开(公告)日：2004-11-09

申请号：US10252532

申请日：2002-09-24

Applicant: Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

Inventor： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

IPC: H01L2982

CPC classification number: H01L27/228 ,  B82Y10/00

Abstract: A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

公开(公告)号：US5751540A

公开(公告)日：1998-05-12

申请号：US618320

申请日：1996-03-19

Applicant: June-key Lee ,  Il-sub Chung ,  Seshu Babu Desu

Inventor： June-key Lee ,  Il-sub Chung ,  Seshu Babu Desu

IPC: H01L29/92 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01G4/06

CPC classification number: H01L28/75 ,  H01L28/60 ,  H01L28/55

Abstract: A ferroelectric capacitor used as a memory cell in a ferroelectric random access memory (FRAM) is provided. The ferroelectric capacitor includes a substrate, an insulating layer formed on the substrate, a Rh lower electrode provided on the insulating layer, an adhesive layer between the insulating layer and the lower electrode, a ferroelectric layer provided on the lower electrode, and a Rh upper electrode provided on the ferroelectric layer. The Rh used as the electrode material is not affected by diffusion of Si due to its fine structure when compared to a Pt electrode, and has excellent electrical properties due to better electrical conductivity and good heat-transfer properties.

Abstract translation: 提供了用作铁电随机存取存储器（FRAM）中的存储单元的铁电电容器。 铁电电容器包括基板，形成在基板上的绝缘层，设置在绝缘层上的Rh下电极，绝缘层和下电极之间的粘合层，设置在下电极上的铁电层，以及Rh上电极 设置在铁电层上的电极。 与Pt电极相比，用作电极材料的Rh不受其精细结构的Si的扩散的影响，并且由于更好的导电性和良好的传热性能而具有优异的电性能。