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公开(公告)号：US20050081886A1
公开(公告)日：2005-04-21
申请号：US10932006
申请日：2004-09-02
IPC分类号： H01L21/304 , C23G1/00 , G01N27/06 , H01L21/00 , H01L21/302
CPC分类号： H01L21/67057 , G01N27/06
摘要： There is disclosed a wafer cleaning method comprising supplying a cleaning water to a wafer cleaned with a chemical solution, measuring the resistivity of a solution including the chemical solution and cleaning water, and differentiating the measured value with respect to time, and cleaning the wafer continuously with the cleaning water until the time differential value of the resistivity becomes equal to or less than a preset value and is held at that values for preset time.
摘要翻译： 公开了一种晶片清洗方法，其包括向清洗的化学溶液的晶片提供清洗水，测量包括化学溶液和清洗水的溶液的电阻率，并且相对于时间差分测量值，以及连续清洁晶片 直到电阻率的时间差值等于或小于预设值，并将其保持在该预定时间的值。
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22.发明授权
公开(公告)号：US5457726A
公开(公告)日：1995-10-10
申请号：US321825
申请日：1994-10-06
申请人： Kunihiro Miyazaki
发明人： Kunihiro Miyazaki
IPC分类号： G01N23/223 , G21K7/00 , H01L21/66
CPC分类号： G01N23/223 , G01N2223/076
摘要： A sample is mounted on a sample base. A detector is provided on the sample base, and detects a fluorescent X-ray generated from the sample, and a scattered X-ray of an incident X-ray when the sample is irradiated with the incident X-ray. A controller controls the sample base and an operation of the detector. The controller sequentially changes an incident angle of the incident X-ray to the sample so as to detect the fluorescent X-ray generated from the sample at each incident angle, and the scattered X-ray of the incident X-ray. Next, the controller obtains the relationship between the incident angle of the incident X-ray to the sample and a standard value obtained by standardizing intensity of the fluorescent X-ray by intensity of the scattered X-ray. Then, the controller corrects the incident angle of the incident X-ray to the sample based on the obtained relationship. Moreover, the controller corrects the positional relationship between an irradiation position of the incident X-ray to the sample and said detector based on the obtained relationship. In this case, the correction of the incident angle of the incident X-ray to said sample is made after ending the correction of the positional relationship.
摘要翻译： 样品安装在样品底座上。 检测器设置在样品基底上，并且检测从样品产生的荧光X射线和当入射的X射线照射样品时入射的X射线的散射的X射线。 控制器控制样品基底和检测器的操作。 控制器顺序地将入射的X射线的入射角度改变为样品，以便检测从每个入射角度的样品产生的荧光X射线和入射的X射线的散射X射线。 接下来，控制器获得入射的X射线与样品的入射角与通过散射X射线的强度标准化荧光X射线的强度而获得的标准值之间的关系。 然后，控制器基于获得的关系来校正入射的X射线对样品的入射角。 此外，控制器基于获得的关系来校正入射X射线与样品的照射位置和所述检测器之间的位置关系。 在这种情况下，在结束位置关系的校正之后，进行入射X射线对所述样品的入射角的校正。
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公开(公告)号：US4915710A
公开(公告)日：1990-04-10
申请号：US324057
申请日：1989-03-16
CPC分类号： C23F3/00 , B24D3/00 , B24D3/346 , C09G1/02 , C09K3/1463
摘要： An abrasive composition particularly suitable for polishing an aluminum-based substrate for a magnetic recording disc, the composition comprising: an alumineous abrasive, preferably in an amount of 3 to 25% by weight; a polishing accelerator of gluconic and/or lactic acid, preferably in an amount of 0.1 to 3% by weight; optionally with sodium gluconate and/or sodium lactate in an amount of 0.1 to 3% by weight; colloidal alumina, preferably in an amount of 0.1 to 5% by weight; and water, the composition typically having a pH of 3 to 5.
摘要翻译： 一种特别适用于抛光用于磁记录盘的铝基底材的磨料组合物，该组合物包含：优选3至25重量％的铝制磨料; 葡萄糖酸和/或乳酸的抛光促进剂，优选为0.1至3重量％的量; 任选地以0.1至3重量％的量的葡萄糖酸钠和/或乳酸钠; 胶体氧化铝，优选为0.1至5重量％的量; 和水，组合物通常具有3至5的pH。
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公开(公告)号：US07902030B2
公开(公告)日：2011-03-08
申请号：US12483728
申请日：2009-06-12
申请人： Takayuki Ito , Yusuke Oshiki , Kouji Matsuo , Kenichi Yoshino , Takaharu Itani , Takuo Ohashi , Toshihiko Iinuma , Kiyotaka Miyano , Kunihiro Miyazaki
发明人： Takayuki Ito , Yusuke Oshiki , Kouji Matsuo , Kenichi Yoshino , Takaharu Itani , Takuo Ohashi , Toshihiko Iinuma , Kiyotaka Miyano , Kunihiro Miyazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/823807 , H01L21/2686 , H01L21/823814 , H01L21/823878 , H01L29/165 , H01L29/66636 , H01L29/78 , H01L29/7848
摘要： A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y≦1E-5exp(21541/T).
摘要翻译： 一种半导体装置的制造方法，其特征在于，在半导体基板的由第一原子构成的表面上形成有与半导体基板的表面的面积为5〜30％的开口率y的开口的开口部; 在所述开口中形成外延层，所述外延层由含有15〜25％的浓度的第二原子的混合晶体构成，所述第二原子的晶格常数不同于所述第一原子的晶格常数; 将杂质离子注入到外延层中; 并在预定温度T下进行活化退火，预定温度T等于或高于1150℃，并且满足y＆nlE; 1E-5exp（21541 / T）的关系。
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25.发明申请公开(公告)号：US20110034015A1
公开(公告)日：2011-02-10
申请号：US12796147
申请日：2010-06-08
申请人： Kenichi Yoshino , Takayuki Ito , Kunihiro Miyazaki
发明人： Kenichi Yoshino , Takayuki Ito , Kunihiro Miyazaki
CPC分类号： F27B17/0025 , H01L21/268 , H01L21/67115 , H01L29/6659 , H01L29/7833
摘要： According to one embodiment, a heat treatment apparatus includes a light emitting unit to emit light to irradiate a wafer, a processing unit with a stage section and a control unit. The control unit implements a first irradiation to irradiate the light onto the wafer. After the first irradiation, the control unit changes at least one selected from a disposition of the wafer, a distribution of an intensity of the light on a major surface of the stage section along a circumferential edge direction of the wafer, and a distribution of a temperature of the wafer in a supplemental heating by the stage section along a circumferential edge direction of the wafer. After the changing, the control unit implements a second irradiation to irradiate the light onto the wafer. Durations of the first irradiation and the second irradiation are shorter than a time necessary for the changing.
摘要翻译： 根据一个实施例，热处理设备包括发射光以照射晶片的发光单元，具有台架部分的处理单元和控制单元。 控制单元执行第一次照射以将光照射到晶片上。 在第一次照射之后，控制单元改变从晶片的布置中选择的至少一种，沿着晶片的周向边缘方向在舞台部分的主表面上的光的强度分布，以及 沿着晶片的周向边缘方向由台阶段进行补充加热时的晶片的温度。 改变之后，控制单元进行第二次照射以将光照射到晶片上。 第一次照射和第二次照射的时间短于变化所需的时间。
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公开(公告)号：US07635601B2
公开(公告)日：2009-12-22
申请号：US11520589
申请日：2006-09-14
IPC分类号： H01L21/66
CPC分类号： H01L22/14 , H01L21/02063 , Y10S134/902
摘要： The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.
摘要翻译： 本公开涉及一种半导体器件的制造方法，包括干法蚀刻半导体衬底或形成在半导体衬底上的结构; 将溶液供应到半导体衬底上; 测量供应溶液的电阻率或电导率; 并且当去除附着在半导体衬底或结构上的蚀刻残留材料时，基于溶液的电阻率或电导率，提供用于将蚀刻残留材料去除预定时间的去除溶液。
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27.发明授权Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus 失效蚀刻方法，形成沟槽隔离结构的方法，半导体衬底和半导体器件公开(公告)号：US07365012B2
公开(公告)日：2008-04-29
申请号：US11201266
申请日：2005-08-10
IPC分类号： H01L21/302
CPC分类号： H01L21/823481 , H01L21/30604 , H01L21/31055 , H01L21/31111 , H01L21/76224 , H01L29/66575
摘要： An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiO2 as a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiO2 by the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.
摘要翻译： 公开了一种使用含有氟化氢和臭氧的蚀刻剂对基材进行蚀刻处理的蚀刻方法。 基材具有以硅为主要材料的第一区域和由SiO 2主要材料构成的第二区域。 蚀刻方法包括以下步骤：制备基材; 以及将所述蚀刻剂供应到所述基材上以形成所述第一和第二区域之间的台阶，其特征在于，所述蚀刻剂的硅的蚀刻速率高于所述蚀刻剂的SiO 2的蚀刻速率 蚀刻剂，使得第一区域的表面的高度低于第二区域的表面的高度。
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公开(公告)号：US06444047B1
公开(公告)日：2002-09-03
申请号：US09477017
申请日：2000-01-03
申请人： Kunihiro Miyazaki
发明人： Kunihiro Miyazaki
IPC分类号： B08B300
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/04 , Y10S134/902
摘要： A method of cleaning a semiconductor substrate is disclosed. The method comprises setting a substrate to-be-treated substantially in parallel to ends of multi-nozzles including an inner tube nozzle and an outer tube nozzle to oppose each other, cleaning the substrate by discharging, to the substrate, a chemical fluid, a combination of chemical fluid and a gas, pure water, or a combination of pure water and a gas through the outer tube nozzle and simultaneously discharging a chemical fluid, a combination of a chemical fluid and a gas, pure water, or a combination of pure water and a gas through the inner tube nozzle, and washing the substrate by discharging pure water to the substrate through at least one of the inner tube nozzle and the outer tube nozzle.
摘要翻译： 公开了一种清洁半导体衬底的方法。 该方法包括将基本上平行于包括内管喷嘴和外管喷嘴的多个喷嘴的端部进行处理的基板相对对置，通过将基板排出到化学流体，清洗基板来清洁基板 化学流体与气体，纯净水或纯水和气体的组合通过外管喷嘴组合，同时排出化学液体，化学液体和气体的组合，纯净水或纯净的组合 水和气体通过内管喷嘴进行洗涤，并且通过内管喷嘴和外管喷嘴中的至少一个将纯水排出到基板来洗涤基板。
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29.发明授权
公开(公告)号：US5868855A
公开(公告)日：1999-02-09
申请号：US612413
申请日：1996-03-07
申请人： Yuji Fukazawa , Kunihiro Miyazaki
发明人： Yuji Fukazawa , Kunihiro Miyazaki
IPC分类号： B08B3/08 , C09K13/08 , C23F1/08 , C23F1/24 , C23G1/12 , C23G3/00 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/302 , B08B6/00
CPC分类号： H01L21/02052
摘要： A silicon wafer is set in a processing bath and an HF water solution and ozone water are respectively supplied from an HF line and ozone water line into the processing bath via an HF valve and ozone water valve to create a mixture. The mixture contains an HF water solution with a concentration of 0.01% to 1% and ozone water with a concentration of 0.1 ppm to 20 ppm, has substantially the same etching rate for silicon and for silicon oxide film and is used at a temperature in the range of 10.degree. to 30.degree. C. The silicon wafer and the silicon oxide film formed on part of the surface of the wafer can be simultaneously cleaned by use of the above mixture.
摘要翻译： 将硅晶片设置在处理槽中，并且HF水溶液和臭氧水分别通过HF阀和臭氧水阀从HF管线和臭氧水管线供应到处理槽中以产生混合物。 该混合物含有浓度为0.01％至1％的HF水溶液和浓度为0.1ppm至20ppm的臭氧水，对于硅和氧化硅膜具有基本上相同的蚀刻速率，并且在 10℃〜30℃的范围。可以通过使用上述混合物同时清洗形成在晶片表面的一部分上的硅晶片和氧化硅膜。
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30.发明授权Surface processing method effected for total-reflection X-ray fluorescence analysis 失效表面处理方法进行全反射X射线荧光分析
公开(公告)号：US5686314A
公开(公告)日：1997-11-11
申请号：US358246
申请日：1994-12-19
申请人： Kunihiro Miyazaki
发明人： Kunihiro Miyazaki
CPC分类号： G01N1/40 , G01N23/223 , G01N2223/076 , G01N33/20 , Y10S134/902 , Y10T436/25 , Y10T436/25125 , Y10T436/25375
摘要： A surface processing method effected before the total-reflection X-ray fluorescence analysis is effected is disclosed. The surface processing is to modify all of the contaminants attached at least to the measurement surface of the wafer into particle-shaped residues. For this purpose, the measurement surface of the wafer is first dissolved by hydrofluoric acid to form a large number of droplets on the measurement surface. Next, the thus formed droplets are dried with the position thereof kept unchanged. After the drying, contaminants attached to the measurement surface of the wafer are left as particle-shaped residues. After this, the measurement surface of the wafer is analyzed by the total-reflection X-ray fluorescence analyzing method.
摘要翻译： 公开了在进行全反射X射线荧光分析之前进行的表面处理方法。 表面处理是将至少附着到晶片的测量表面的所有污染物修改为颗粒状残余物。 为此，首先通过氢氟酸溶解晶片的测量表面，以在测量表面上形成大量的液滴。 接下来，将这样形成的液滴干燥，其位置保持不变。 干燥后，附着到晶片测量表面的污染物留作颗粒状残留物。 此后，通过全反射X射线荧光分析方法分析晶片的测量表面。
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