Abstract:
A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.
Abstract:
The present invention relates to an apparatus for manufacturing compacted irons and an apparatus for manufacturing molten irons using the same. The apparatus for manufacturing compacted irons according to the present invention includes a charging hopper into which reduced materials containing fine reduced irons are charged, screw feeders installed inside the charging hopper to make an acute angle with a vertical direction and discharging the reduced materials containing fine reduced irons which enter into the charging hopper, and a couple of rolls separated from each other to form a gap between the rolls. The couple of rolls compact the reduced materials containing fine reduced irons discharged from the charging hopper by the screw feeders and manufacture compacted irons. Each screw feeders is arranged side by side along an axis direction of the couple of rolls and an extension of the center axis of each screw feeder passes through the gap.
Abstract:
A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.
Abstract:
Provided is a method of manufacturing a semiconductor device. The method includes: forming a charge storage layer on a substrate on which a gate insulating layer is formed; forming a first metal oxide layer on the charge storage layer using a first reaction source including a metal oxide layer precursor and a first oxidizing agent and changing the first metal oxide layer to a second metal oxide layer using a second reaction source including a second oxidizing agent having larger oxidizing power than the first oxidizing agent and repeating the forming of the first metal oxide layer and the changing of the first metal oxide layer to the second metal oxide layer several times to form a blocking insulating layer; and forming an electrode layer on the blocking insulating layer.
Abstract:
A clothes treatment apparatus that treats clothes into a condition suitable to wear is disclosed. The clothes treatment apparatus includes a cabinet, a receiving space defined in the cabinet for receiving clothes, air and moisture supply devices for supplying dried air and moisture into the receiving space, respectively, an outfit chamber defined in the cabinet for receiving the hot air and steam supply devices, the outfit chamber including an inlet port for allowing external air to be introduced into the outfit chamber therethrough to cool the hot air and steam supply devices, and a noise prevention device installed at the inlet port for preventing noise generated in the outfit chamber from being discharged out of the outfit chamber through the inlet port.
Abstract:
Disclosed herein is a dendrimer, in which metallocene, which is an oxidation-reduction material, is located at a core, and a conjugated dendron is connected to the metallocene core by a linker compound, an organic active layer having the dendrimer, an organic memory device having the organic active layer and a method of manufacturing the organic active layer and the organic memory device. The organic memory device manufactured using a dendrimer having a metallocene core of example embodiments may have a shorter switching time, decreased operation voltage, decreased manufacturing cost and increased reliability, thereby realizing a highly-integrated large-capacity memory device.
Abstract:
A random noise evaluation method is comprised of: capturing and obtaining current image data; calculating a difference between the current image data and an average of previous image data; calculating a current difference square sum using a sum of the difference and a previous difference square sum; and calculating a random noise value using the current difference square sum. Since a noise evaluation algorithm obtains random noises without storing image data for all pixels of a*b*n, it is able to evaluate random noise evaluation for a high-resolution image sensor even with a relatively small size of memory.
Abstract translation:随机噪声评估方法包括:捕获和获取当前图像数据; 计算当前图像数据与先前图像数据的平均值之间的差; 使用所述差和先前差异平方和的和来计算电流差平方和; 并使用电流差平方和来计算随机噪声值。 由于噪声评估算法在不存储a * b * n的所有像素的图像数据的情况下获得随机噪声,因此即使使用相对小的存储器也能够评估高分辨率图像传感器的随机噪声评估。
Abstract:
Disclosed are a method for forming an organic layer pattern which is characterized by forming a thin layer by coating a coating solution including a polyimide-based polymer having a heteroaromatic pendant group including a heteroatom in its polyimide major chain, a photoinitiator and a crosslinking agent on a substrate and drying the substrate, and exposing and developing the thin layer, an organic layer pattern prepared by the method, and an organic memory device comprising the pattern. According to example embodiments, a high-resolution micropattern may be formed without undergoing any expensive process, e.g., photoresist, leading to simplification of the preparation process and cost reduction.
Abstract:
When a metal layer formed by reaction of a metal source and an oxygen (O2) source is deposited, oxidization of a conductive layer disposed under or on the metal layer can be reduced and/or prevented by a method of forming the metal layer and a method of fabricating a capacitor using the same. Between forming the conductive layer and the metal layer, and between forming the metal layer and the conductive layer, a cycle of supplying a metal source, purging, supplying an oxygen source, purging, plasma processing of reduction gas and purging is repeated at least once. In this case, the metal layer is formed by repeating a cycle of supplying a metal source, purging, supplying an oxygen source and purging.
Abstract translation:当沉积通过金属源和氧(O 2 O 2)源的反应形成的金属层时,可以通过以下方法减少和/或防止设置在金属层下面或之上的导电层的氧化: 形成金属层的方法和使用其制造电容器的方法。 在形成导电层和金属层之间,并且在形成金属层和导电层之间,重复提供金属源,净化,供应氧源,净化,还原气体的等离子体处理和清洗的循环至少一次 。 在这种情况下,通过重复提供金属源,净化,供应氧源和清洗的循环来形成金属层。
Abstract:
An image sensor an image sensor includes an image sensing element which converts incident light into an analogue signal, a voltage generator which includes a variable resistor circuit and which generates a ramping voltage, where a slope of the ramping voltage is variable and corresponds a resistance value of the variable resistor circuit, a converter which converts a voltage of the analogue signal into a digital signal using the ramping voltage generated by the voltage generator, and a controller which controls the resistance value of the variable resistance circuit.