公开(公告)号：US07230276B2

公开(公告)日：2007-06-12

申请号：US10699127

申请日：2003-10-30

Applicant: Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

Inventor： Hyun Woo Song ,  O Kyun Kwon ,  Won Seok Han ,  Sang Hee Park ,  Jong Hee Kim ,  Jae Heon Shin ,  Young Gu Ju

IPC: H01L27/15

CPC classification number: H01L33/145 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18347 ,  H01S5/3095 ,  H01S2301/176

Abstract: Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.

公开(公告)号：US6060704A

公开(公告)日：2000-05-09

申请号：US842870

申请日：1997-04-17

Applicant: Kyung-Sook Hyun ,  O-Kyun Kwon ,  Kwang-Joon Kim ,  El-Hang Lee

Inventor： Kyung-Sook Hyun ,  O-Kyun Kwon ,  Kwang-Joon Kim ,  El-Hang Lee

IPC: H01L31/0352 ,  H01L27/14

CPC classification number: B82Y20/00 ,  H01L31/035236

Abstract: For a multiple transmission communication system, how to individually isolate the transmitted lights and then to distribute to the terminals has been primary concerns to be solved. In the photodetector structure, an absorption layer may be configured as either multiple quantum well structures corresponding to operational wavelengths, or filter-based structure, allowing to select wavelengths in a 1:2:4:8 ratio as an absorptance for each wavelength. In case of using such four-fold lights, the determination as to which wavelength among four-fold wavelengths can be made based upon the total amounts of the current flow in such a photodetector. The photodetector employing such schemes is provided from the present invention.

Abstract translation: 对于多传输通信系统，如何单独隔离发射的光，然后分发到终端，这是首要考虑的问题。 在光检测器结构中，吸收层可以被配置为对应于操作波长的多个量子阱结构或基于滤波器的结构，允许以1:2:4:8的比率选择波长作为每个波长的吸收率。 在使用这种四重光的情况下，可以基于这种光电检测器中的电流的总量来确定四倍波长中的哪个波长。 采用这种方案的光电探测器由本发明提供。

公开(公告)号：US5770851A

公开(公告)日：1998-06-23

申请号：US713535

申请日：1996-09-13

Applicant: Hyo-Hoon Park ,  Kwang-Joon Kim ,  Kyung-Sook Hyun ,  O-Kyun Kwon ,  Seok-Ho Song ,  Byueng-Su Yoo ,  Hye-Yong Chu

Inventor： Hyo-Hoon Park ,  Kwang-Joon Kim ,  Kyung-Sook Hyun ,  O-Kyun Kwon ,  Seok-Ho Song ,  Byueng-Su Yoo ,  Hye-Yong Chu

IPC: G02B6/43 ,  G02F3/02 ,  H01J40/14

CPC classification number: G02F3/028 ,  G02B6/43

Abstract: An improved parallel optical logic operator provides a path for light to pass through substrates in which a light source and an optical logic device are arranged. An optical logic device operates by transmission of light forwarded to a predetermined direction. This increases integration efficiency of the system by eliminating optical parts for changing the light path. A unit chip includes a laser array for generating a predetermined light in accordance with an electrical signal for a logic process, a laser array substrate on which via holes are formed for passing light, a microlens array for converting the light beam emitted from each laser device of the laser array into a parallel light beam for passing through the via hole, and an optical logic circuit array formed with a combination of an S-SEED which performs a logic function by transmission of the light signal through an optical window in S-SEED. A plurality of unit chips are laminated so that the light emitted from the laser device of one of the unit chips passes through an optical logic circuit of a corresponding unit chip and can be made incident on the optical logic circuit in the next unit chip through a via hole.

Abstract translation: 改进的并行光逻辑运算器提供光通过其中布置光源和光逻辑器件的衬底的路径。 光逻辑器件通过传输转发到预定方向的光来操作。 这通过消除用于改变光路的光学部件来提高系统的集成效率。 单元芯片包括用于根据用于逻辑处理的电信号产生预定光的激光阵列，其上形成有用于通过光的通孔的激光阵列基板，用于转换从每个激光装置发射的光束的微透镜阵列 的激光器阵列的平行光束通过通孔;以及光学逻辑电路阵列，其形成有S-SEED的组合，S-SEED通过S-SEED中的光学窗口传输光信号来执行逻辑功能 。 多个单位芯片被层叠，使得从单个芯片之一的激光装置发射的光通过相应的单元芯片的光学逻辑电路，并且可以通过一个单元芯片入射到下一个单元芯片中的光学逻辑电路上 通孔。

公开(公告)号：US20120104531A1

公开(公告)日：2012-05-03

申请号：US13191758

申请日：2011-07-27

Applicant: Mi-Ran PARK ,  O-Kyun Kwon

Inventor： Mi-Ran PARK ,  O-Kyun Kwon

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/02027 ,  H01L31/02161 ,  H01L31/184 ,  Y02E10/544

Abstract: Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

Abstract translation: 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。

公开(公告)号：US20100316383A1

公开(公告)日：2010-12-16

申请号：US12582211

申请日：2009-10-20

Applicant: Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

Inventor： Hyun Soo KIM ,  Kisoo Kim ,  Dong Churl Kim ,  Byung-Seok Choi ,  O-Kyun Kwon ,  Dae Kon Oh

IPC: H04J14/02

CPC classification number: H04J14/0282

Abstract: Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength.

Abstract translation: 提供了一种波分复用无源光网络（WDM-PON）装置。 WDM-PON包括光源单元，光复用器和啁啾布拉格光栅。 光源单元产生光信号。 光复用器通过光复用器的一端从光源单元接收光信号，复用光信号，并输出复用的光信号。 啁啾布拉格光栅连接到光复用器的另一端。 啁啾布拉格光栅再次反射已经通过光复用器的光信号，以将光信号的某一部分重新输入光复用器和光源单元。 光复用器对重新输入的光信号执行频谱分片，并使用光复用器的信道波长作为主振荡波长来操作光源单元。

公开(公告)号：US20100301448A1

公开(公告)日：2010-12-02

申请号：US12847974

申请日：2010-07-30

Applicant: O-Kyun KWON ,  Dong-Woo Suh ,  Junghyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun KWON ,  Dong-Woo Suh ,  Junghyung Pyo ,  Gyung-Ock Kim

IPC: H01L27/12

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US07693384B2

公开(公告)日：2010-04-06

申请号：US12111884

申请日：2008-04-29

Applicant: Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

Inventor： Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

IPC: G02B6/10

CPC classification number: G02B6/12007

Abstract: A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

Abstract translation: 提供了一种波导结构。 波导结构包括：缝隙通道波导，包括第一和第二图案，它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数（TOC）乘以第二上层的TOC是负数。

公开(公告)号：US20070134926A1

公开(公告)日：2007-06-14

申请号：US11635223

申请日：2006-12-07

Applicant: O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

Inventor： O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

IPC: H01L21/302

CPC classification number: H01L21/30621 ,  H01S5/183 ,  H01S5/2081

Abstract: Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.

Abstract translation: 提供了III-V族半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。 根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl 2，Ar，CH 4， 和H 2 N以蚀刻堆叠结构，从而形成VCSEL的镜层。 第一半导体层由III-V族的半导体形成，第二半导体层由除了第一半导体层的半导体之外的III-V族的半导体形成。 使用一次蚀刻工艺蚀刻下镜面层，下电极层，光增益层，上电极层和上镜层的至少一部分，从而获得清洁且光滑的蚀刻表面。

公开(公告)号：US06727109B2

公开(公告)日：2004-04-27

申请号：US10210668

申请日：2002-07-31

Applicant: Young Gu Ju ,  Won Seok Han ,  O Kyun Kwon ,  Jae Heon Shin ,  Byueng Su Yoo ,  Jung Rae Ro

Inventor： Young Gu Ju ,  Won Seok Han ,  O Kyun Kwon ,  Jae Heon Shin ,  Byueng Su Yoo ,  Jung Rae Ro

IPC: H01L2100

CPC classification number: H01S5/18308 ,  H01L33/145 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2063

Abstract: The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.

Abstract translation: 本发明涉及一种垂直腔表面发射激光器的制造方法，该激光器被视为用于长波长通信的光源。 本发明包括通过注入诸如硅（Si）的重离子在表面附近形成具有高电阻的层，使得最小电流注入直径不像植入质子那样非常小。 此外，本发明包括再生晶体，使得电流可以平行地流动外延表面，以显着降低直到由硅（Si）离子形成的电流注入部分的电阻。 因此，本发明不仅可以有效地降低电流注入直径，而且可以显着降低器件的电阻以减少发热。 此外，本发明可以进一步改善在再生后使用InP的散热分散，从而提高装置的整体性能。

公开(公告)号：US6115375A

公开(公告)日：2000-09-05

申请号：US967797

申请日：1997-11-10

Applicant: Kwang Joon Kim ,  O Kyun Kwon ,  Kyung Sook Hyun ,  Seok Ho Song ,  El Hang Lee

Inventor： Kwang Joon Kim ,  O Kyun Kwon ,  Kyung Sook Hyun ,  Seok Ho Song ,  El Hang Lee

IPC: H04B10/00 ,  H04Q11/00 ,  H04L12/50

CPC classification number: H04Q11/0003 ,  H04Q11/0005 ,  H04Q2011/0035

Abstract: A multistage optical packet switching apparatus with self electro-optic-effect device is disclosed. The apparatus is formed with multistage structure using a plurality of symmetrical self electro-optic-effect devices, self-routing being performed by the control for a header part of optical packets after self-duplication and amplification for the input optical signal. The optical packet switching apparatus using a plurality of symmetrical self electro-optic-effect devices includes a front stage having first and second self electro-optic-effect devices interconnected and a back stage having third and fourth self electro-optic-effect devices interconnected, the 1.quadrature. multistage structure comprising the unit switching modules interconnected each comprising the front and the back stages, the self-duplication and amplification being performed in the front stage and the switching being performed in the back stage. The use of the apparatus is an optical exchange.

Abstract translation: 公开了具有自电光效应装置的多级光分组交换装置。 该装置使用多个对称的自电光效应装置形成多级结构，通过对输入光信号的自复制和放大之后的光分组的标题部分的控制执行自路由。 使用多个对称的自电光效应装置的光分组交换装置包括具有互连的第一和第二自电光效应装置的前级和具有互连的第三和第四自电光效应装置的后级， 包括各自包括前级和后级的单元切换模块的1＆amp;多级结构，在前级执行自复制和放大，并且在后级执行切换。 该装置的使用是光交换。