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    Waveguide structure
    1.
    发明授权
    Waveguide structure 失效
    波导结构

    公开(公告)号：US07693384B2

    公开(公告)日：2010-04-06

    申请号：US12111884

    申请日：2008-04-29

    Applicant: Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

    Inventor： Jong-Moo Lee ,  Duk-Jun Kim ,  O-Kyun Kwon ,  Gyung-Ock Kim

    IPC: G02B6/10

    CPC classification number: G02B6/12007

    Abstract: A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

    Abstract translation: 提供了一种波导结构。 波导结构包括：缝隙通道波导，包括第一和第二图案，它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数（TOC）乘以第二上层的TOC是负数。

    WAVEGUIDE STRUCTURE AND ARRAYED WAVEGUIDE GRATING STRUCTURE
    2.
    发明申请
    WAVEGUIDE STRUCTURE AND ARRAYED WAVEGUIDE GRATING STRUCTURE 有权
    波导结构和阵列波导光栅结构

    公开(公告)号：US20090252457A1

    公开(公告)日：2009-10-08

    申请号：US12199517

    申请日：2008-08-27

    Applicant: Duk-Jun KIM ,  Jung-Ho Song ,  Jong-Moo Lee ,  Junghyung Pyo ,  Gyung-Ock Kim

    Inventor： Duk-Jun KIM ,  Jung-Ho Song ,  Jong-Moo Lee ,  Junghyung Pyo ,  Gyung-Ock Kim

    IPC: G02B6/26

    CPC classification number: G02B6/12011 ,  G02B2006/12119

    Abstract: Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.

    Abstract translation: 提供了一种波导结构和阵列波导光栅结构。 阵列波导光栅结构包括输入星形耦合器，输出星形耦合器以及光学地连接输入星形耦合器和输出星形耦合器的多个阵列波导。 每个阵列波导包括具有高约束因子的至少一个部分和具有相对较低约束因子的至少两个部分。 具有高约束因子的阵列波导的部分具有相同的结构。

    Waveguide structure and arrayed waveguide grating structure
    3.
    发明授权
    Waveguide structure and arrayed waveguide grating structure 有权
    波导结构和阵列波导光栅结构

    公开(公告)号：US07848602B2

    公开(公告)日：2010-12-07

    申请号：US12199517

    申请日：2008-08-27

    Applicant: Duk-Jun Kim ,  Jung-Ho Song ,  Jong-Moo Lee ,  Junghyung Pyo ,  Gyung-Ock Kim

    Inventor： Duk-Jun Kim ,  Jung-Ho Song ,  Jong-Moo Lee ,  Junghyung Pyo ,  Gyung-Ock Kim

    IPC: G02B6/10 ,  G02B6/26 ,  G02B6/34 ,  G02B6/42

    CPC classification number: G02B6/12011 ,  G02B2006/12119

    Abstract: Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.

    Abstract translation: 提供了一种波导结构和阵列波导光栅结构。 阵列波导光栅结构包括输入星形耦合器，输出星形耦合器以及光学地连接输入星形耦合器和输出星形耦合器的多个阵列波导。 每个阵列波导包括具有高约束因子的至少一个部分和具有相对较低约束因子的至少两个部分。 具有高约束因子的阵列波导的部分具有相同的结构。

    SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
    半导体器件及其形成方法

    公开(公告)号：US20100301448A1

    公开(公告)日：2010-12-02

    申请号：US12847974

    申请日：2010-07-30

    Applicant: O-Kyun KWON ,  Dong-Woo Suh ,  Junghyung Pyo ,  Gyung-Ock Kim

    Inventor： O-Kyun KWON ,  Dong-Woo Suh ,  Junghyung Pyo ,  Gyung-Ock Kim

    IPC: H01L27/12

    CPC classification number: H01L21/76267 ,  H01L21/76283

    Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

    Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

    Semiconductor device and method for forming the same
    8.
    发明授权
    Semiconductor device and method for forming the same 有权
    半导体装置及其形成方法

    公开(公告)号：US08183633B2

    公开(公告)日：2012-05-22

    申请号：US12847974

    申请日：2010-07-30

    Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

    Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

    IPC: H01L27/12

    CPC classification number: H01L21/76267 ,  H01L21/76283

    Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

    Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

    Semiconductor integrated circuits including grating coupler for optical communication and methods of forming the same
    9.
    发明授权
    Semiconductor integrated circuits including grating coupler for optical communication and methods of forming the same 有权
    包括用于光通信的光栅耦合器的半导体集成电路及其形成方法

    公开(公告)号：US08165437B2

    公开(公告)日：2012-04-24

    申请号：US12684677

    申请日：2010-01-08

    Applicant: Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

    Inventor： Jung-Hyung Pyo ,  O-Kyun Kwon ,  Gyung-Ock Kim

    IPC: G02B6/34 ,  G02B6/42

    CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

    Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

    Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

    Semiconductor device and method for forming the same
    10.
    发明授权
    Semiconductor device and method for forming the same 有权
    半导体装置及其形成方法

    公开(公告)号：US07790567B2

    公开(公告)日：2010-09-07

    申请号：US12130877

    申请日：2008-05-30

    Applicant: O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

    Inventor： O-Kyun Kwon ,  Dong-Woo Suh ,  Jung-Hyung Pyo ,  Gyung-Ock Kim

    IPC: H01L21/76

    CPC classification number: H01L21/76267 ,  H01L21/76283

    Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

    Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

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