公开(公告)号：US08436527B2

公开(公告)日：2013-05-07

申请号：US13034137

申请日：2011-02-24

Applicant: Iwao Mitsuishi ,  Kunio Ishida ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Keiko Albessard ,  Shinya Nunoue

Inventor： Iwao Mitsuishi ,  Kunio Ishida ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Keiko Albessard ,  Shinya Nunoue

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/56

CPC classification number: C09K11/7734 ,  C09K11/7728 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device includes a board and a light emitting element mounted on the board, emitting light having a wavelength of 250 nm to 500 nm. A red fluorescent layer is formed on the element and includes a red phosphor (M1−x1Eux1)aSibAlOcNd having a semicircular shape with a radius r, where M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Aluminum, rare-earth elements, and IVB group elements. An intermediate layer is formed on the red fluorescent layer, being made of transparent resin, having a semicircular shape with a radius D; and a green fluorescent layer is formed on the intermediate layer, including a green phosphor, having a semicircular shape. A relationship between the radius r and the radius D is 2.0r(μm)≦D≦(r+1000)(μm).

Abstract translation: 发光器件包括安装在板上的板和发光元件，发射波长为250nm至500nm的光。 在元件上形成红色荧光层，并且包括具有半径r的半圆形的红色荧光体（M1-x1Eux1）aSibAlOcNd，其中M是选自IA组元素，IIA族元素，IIIA族元素的元素， IIIB族元素，除了铝，稀土元素和IVB族元素。 中间层形成在红色荧光层上，由透明树脂制成，具有半径为D的半圆形状; 并且在具有半圆形形状的包括绿色荧光体的中间层上形成绿色荧光层。 半径r和半径D之间的关系为2.0r（mum）@ D @（r + 1000）（mum）。

公开(公告)号：US08436395B2

公开(公告)日：2013-05-07

申请号：US13405961

申请日：2012-02-27

Applicant: Takahiro Sato ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Takahiro Sato ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L33/36

CPC classification number: H01L33/24 ,  H01L33/382 ,  H01L33/42

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.

Abstract translation: 根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。 该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。 透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。 透明电极具有设置在n侧和p侧电极之间的孔。 沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。 孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

公开(公告)号：US20130087805A1

公开(公告)日：2013-04-11

申请号：US13404531

申请日：2012-02-24

Applicant: Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

Inventor： Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

IPC: H01L29/20

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers.

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光层。 发光层设置在n型层和p型层之间，并且包括交替层叠的多个势垒层和多个阱层。 在多个阻挡层中最靠近p型层的p侧阻挡层包括含有III族元素的第一层和第二层。 第二层的III族元素中的In组成比高于第一层的III族元素中的In组成比。 p侧层的平均In组成比高于多个势垒层中最靠近n型层的n侧阻挡层的平均In组成比。

公开(公告)号：US08414795B2

公开(公告)日：2013-04-09

申请号：US13037635

申请日：2011-03-01

Applicant: Aoi Okada ,  Yumi Fukuda ,  Naotoshi Matsuda ,  Iwao Mitsuishi ,  Shinya Nunoue

Inventor： Aoi Okada ,  Yumi Fukuda ,  Naotoshi Matsuda ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC: C09K11/64

CPC classification number: C09K11/7731 ,  C09K11/0883 ,  C09K11/7734 ,  H01L27/15 ,  H01L33/502 ,  H01L33/504 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): (M1-xECx)aM1bAlOcNd  (1). In the formula (1), M is an element selected from the group consisting of IA group elements, IIA group elements, IIIA group elements, IIIB group elements, rare earth elements and IVA group elements; EC is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; M1 is different from M and is selected from the group consisting of tetravalent elements; and x, a, b, c and d are numbers satisfying the conditions of 0

Abstract translation: 本实施方案提供由下式（1）表示的红色发光荧光物质：（M1-xECx）aM1bAlOcNd（1）。 在式（1）中，M是选自IA族元素，IIA族元素，IIIA族元素，IIIB族元素，稀土元素和IVA族元素的元素; EC是选自Eu，Ce，Mn，Tb，Yb，Dy，Sm，Tm，Pr，Nd，Pm，Ho，Er，Cr，Sn，Cu，Zn，As，Ag，Cd， Sb，Au，Hg，Tl，Pb，Bi和Fe; M1与M不同，选自四价元素; x，a，b，c和d分别是满足条件0

公开(公告)号：US08399896B2

公开(公告)日：2013-03-19

申请号：US12875503

申请日：2010-09-03

Applicant: Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

Inventor： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC: H01L33/30 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0

Abstract translation: 根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。 阻挡层设置在n型和p型半导体层之间。 阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。 阻挡层中的至少一个包括第一层，第二层和第三层。 第二层比第一层更靠近p型半导体层。 第三层比第二层更靠近p型半导体层。 第二层包括Al x Ga 1-x N（0

公开(公告)号：US08395169B2

公开(公告)日：2013-03-12

申请号：US12874839

申请日：2010-09-02

Applicant: Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

Inventor： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/504 ,  H01L24/29 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

Abstract translation: 根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。 半导体发光元件发射第一光。 半导体发光元件被放置在安装构件上。 第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。 第一透明层对于第一光和第二光是透明的。

公开(公告)号：US08354681B2

公开(公告)日：2013-01-15

申请号：US11689246

申请日：2007-03-21

Applicant: Yasushi Hattori ,  Shinya Nunoue ,  Shinji Saito ,  Genichi Hatakoshi

Inventor： Yasushi Hattori ,  Shinya Nunoue ,  Shinji Saito ,  Genichi Hatakoshi

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/382 ,  H01L33/46 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014

Abstract: A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.

Abstract translation: 一种半导体发光元件，包括具有第一表面和第二表面的半导体衬底，所述第一表面和第二表面面对所述第一表面的相对侧，所述半导体衬底具有形成在所述第一表面中的凹部，所述凹部具有V形十字 形成在所述凹部的内表面上的反射层，形成在所述反射层上的第一电极，形成在所述第二表面上的发光层，以及形成在所述发光层上的第二电极。

公开(公告)号：US08348468B2

公开(公告)日：2013-01-08

申请号：US12876738

申请日：2010-09-07

Applicant: Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

Inventor： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

IPC: F21V11/02

CPC classification number: F21K9/64 ,  F21K9/232 ,  F21V3/00 ,  F21Y2101/00 ,  F21Y2115/30

Abstract: An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.

Abstract translation: 本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。 发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。 在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。

公开(公告)号：US20130001584A1

公开(公告)日：2013-01-03

申请号：US13405961

申请日：2012-02-27

Applicant: Takahiro SATO ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Takahiro SATO ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L33/32

CPC classification number: H01L33/24 ,  H01L33/382 ,  H01L33/42

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.

Abstract translation: 根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。 该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。 透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。 透明电极具有设置在n侧和p侧电极之间的孔。 沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。 孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

公开(公告)号：US20120292592A1

公开(公告)日：2012-11-22

申请号：US13218909

申请日：2011-08-26

Applicant: Jongil HWANG ,  Tomonari Shioda ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Jongil HWANG ,  Tomonari Shioda ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L33/04 ,  H01L33/26

CPC classification number: H01L33/32 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/325

Abstract: According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1-z1Inz1N (0

Abstract translation: 根据一个实施例，半导体发光器件包括：第一和第二半导体层，发光部分和含In层。 第一半导体层通过基底层形成在硅衬底上。 发光部分设置在第一半导体层上，并且包括阻挡层和设置在包括Ga1-z1Inz1N（0