Backlight for LCD's
    21.
    发明申请
    Backlight for LCD's 失效
    LCD背光

    公开(公告)号:US20010055204A1

    公开(公告)日:2001-12-27

    申请号:US09932102

    申请日:2001-08-17

    Inventor: Akiho Mitsuteru

    CPC classification number: G02B6/0031 G02B6/0068

    Abstract: (Purpose) There is provided with an illumination device for LCD device according to the invention to flow the same electric current through lamps on the same driving voltage, resluting in a long life of said illumination device. (Means of Solution) The device has a light guide plate 10, three or more light sources 11, 12 and 13 provided around at least one of side ends of the light guide plate 10, and a light reflection member 19, surrounding these light sources, to reflect light emitted from the light sources to the light guide plate 10. The light sources 11, 12 and 13 are located so as to have the same parasitic capacitance caused by intervals between the light sources and the light reflection member 19.

    Abstract translation: (目的)根据本发明的液晶显示装置的照明装置具有以相同的驱动电压流过相同的电流的灯,在所述照明装置的使用寿命长的情况下进行再循环。 (解决方案)该装置具有导光板10,设置在导光板10的至少一个侧端周围的三个以上的光源11,12,13以及围绕这些光源的光反射部件19 以将从光源发射的光反射到导光板10.光源11,12和13被定位成具有由光源和光反射部件19之间的间隔引起的相同的寄生电容。

    Active matrix array devices
    22.
    发明申请
    Active matrix array devices 有权
    有源矩阵阵列器件

    公开(公告)号:US20010050728A1

    公开(公告)日:2001-12-13

    申请号:US09861941

    申请日:2001-05-21

    Abstract: An active matrix array device, such as an AMLCD, has an array of matrix elements (10) addressed via sets of address conductors (14, 16). An address circuit (35) connected to one set (16) includes a multiplexing circuit (31) integrated on the same substrate (25) as the matrix elements and the address conductors of the one set are organised in groups with each conductor in a group being associated with a respective and different one of a plurality of signal bus lines (33) in the multiplexer circuit. Each signal bus line (33) is connected to a respective signal processing circuit (42), e.g. a DAC in the case of an AMLCD, also integrated on the substrate as respective circuit blocks. To avoid problems in use, for example caused by variations in the performance of these signal processing circuits, the arrangement of couplings with the bus lines of the address conductors in adjacent groups is mirrored about the boundary between the groups.

    Abstract translation: 诸如AMLCD的有源矩阵阵列装置具有通过地址导体集合(14,16)寻址的矩阵元素阵列(10)。 连接到一组(16)的地址电路(35)包括集成在与矩阵元件相同的基板(25)上的多路复用电路(31),并且一组的地址导体与组中的每个导体分组地组织 与多路复用器电路中的多个信号总线(33)中的相应且不同的一个相关联。 每个信号总线(33)连接到相应的信号处理电路(42),例如 在AMLCD的情况下,DAC也作为各个电路块集成在衬底上。 为了避免使用中的问题,例如由这些信号处理电路的性能的变化引起的,与相邻组中的地址导体的总线的耦合的布置与组之间的边界相反。

    DATA COMPRESSION AND EXPANSION OF AN N-LEVEL INFORMATION SIGNAL
    23.
    发明申请
    DATA COMPRESSION AND EXPANSION OF AN N-LEVEL INFORMATION SIGNAL 失效
    数据压缩和N级信息信号的扩展

    公开(公告)号:US20010041984A1

    公开(公告)日:2001-11-15

    申请号:US09089628

    申请日:1998-06-02

    CPC classification number: H03M7/30 G11B20/00007 G11B20/10 G11B2020/00065

    Abstract: A data compression apparatus is disclosed for data compressing an information signal, which is in n-level form, n being larger than 2. The data compression apparatus comprises an input terminal (1) for receiving the n-level information signal, an entropy coder, such as an arithmetic coder (4) having an input (2) for receiving an input signal, which is adapted to carry out a lossless encoding step on the input signal, so as to obtain a data compressed output signal at an output (6). The apparatus further comprises a prediction filter (12) for carrying out a prediction step on the n-level information signal so as to obtain a prediction signal and a probability signal determining unit (18) for generating the probability signal in response to said prediction signal. An output terminal (8) is available for supplying said data compressed output signal. (FIG. 1) Further, a data expansion apparatus is disclosed. (FIG. 2)

    Abstract translation: 公开了一种用于数据压缩n级大小为n级的信息信号的数据压缩装置。数据压缩装置包括用于接收n级信息信号的输入端(1),熵编码器 ,例如具有用于接收输入信号的输入(2)的算术编码器(4),其适于在输入信号上执行无损编码步骤,以便在输出端(6)处获得数据压缩输出信号 )。 该装置还包括:预测滤波器(12),用于对n电平信息信号执行预测步骤以获得预测信号;以及概率信号确定单元(18),用于响应所述预测信号产生概率信号 。 输出端子(8)可用于提供所述数据压缩输出信号。 (图1)此外,公开了一种数据扩展装置。 (图2)

    DEVICE INCLUDING A BUILT-IN ELECTROACOUSTIC TRANSDUCER FOR OPTIMUM SPEECH REPRODUCTION
    24.
    发明申请
    DEVICE INCLUDING A BUILT-IN ELECTROACOUSTIC TRANSDUCER FOR OPTIMUM SPEECH REPRODUCTION 失效
    包括用于最佳语音复现的内置电动换能器的装置

    公开(公告)号:US20010040975A1

    公开(公告)日:2001-11-15

    申请号:US09128835

    申请日:1998-08-04

    CPC classification number: H04R5/02 H04R2499/13

    Abstract: In a device (8) which includes an electroacoustic transducer (7) for the acoustic reproduction of sound signals to an ear (14) of a user (2) who assumes a user position at the device (8), the transducer (7) is optimized for the acoustic reproduction of speech-signal sound waves and is equipped with additional means (25) for realizing a distinct directivity for the speech-signal sound waves emitted by said transducer (7) and, as a result of its directivity, the transducer (7) directs the speech-signal sound waves which it emits preferentially to the ear (14) of a user (2) who is in the user posture.

    Abstract translation: 在包括用于声音再现声音信号的电声换能器(7)的装置(8)中,所述电声换能器(7)在放置在装置(8)处的用户位置的用户(2)的耳朵(14) 被优化用于语音信号声波的声音再现,并且配备有用于实现由所述换能器(7)发射的语音信号声波的不同方向性的附加装置(25),并且由于其方向性的结果 换能器(7)将其优先发出的语音信号声波引导到处于用户姿态的用户(2)的耳朵(14)。

    Method of crystallising a semiconductor film
    25.
    发明申请
    Method of crystallising a semiconductor film 审中-公开
    半导体膜的结晶方法

    公开(公告)号:US20010030292A1

    公开(公告)日:2001-10-18

    申请号:US09828092

    申请日:2001-04-06

    CPC classification number: H01L29/66757 H01L29/78675

    Abstract: A method of crystallizing a semiconductor film (3) deposited on a supporting substrate (1,2) is disclosed together with apparatus for the same. The method comprising the steps of (a) with a laser (5), exposing each of a series of discrete regions (a to n) of the semiconductor film to one or more laser beam (4) pulses (an nullexposurenull); (b) monitoring the energy output of the laser (5); and (c) if the energy output of the laser (5) during an exposure of a discrete region (a to n) exceeds a predetermined threshold, re-exposing that discrete region to one or more laser beam (4) pulses. Also disclosed is a TFT (12) manufactured by said method and active matrix device (20) comprising a row (24) and column (23) array of active elements (22), each having such a switching TFT (12).

    Abstract translation: 公开了沉积在支撑基板(1,2)上的半导体膜(3)的结晶方法及其装置。 该方法包括以下步骤:(a)使用激光(5),将半导体膜的一系列离散区域(a至n)中的每一个暴露于一个或多个激光束(4)脉冲(“曝光”); (b)监测激光器的能量输出(5); 和(c)如果在离散区域(a至n)的曝光期间激光器(5)的能量输出超过预定阈值,则将该离散区域再曝光到一个或多个激光束(4)脉冲。 还公开了由所述方法制造的TFT(12)和有源矩阵器件(20),其包括有源元件(22)的行(24)和列(23)阵列,每个具有这种开关TFT(12)。

    METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE COMPRISING AN ORGANIC- CONTAINING MATERIAL
    26.
    发明申请
    METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE COMPRISING AN ORGANIC- CONTAINING MATERIAL 无效
    制造包含有机材料的电子设备的方法

    公开(公告)号:US20010029091A1

    公开(公告)日:2001-10-11

    申请号:US09175247

    申请日:1998-10-20

    Abstract: A method for manufacturing an electronic device comprising an organic-containing material (3) comprises the steps of: covering the organic-containing material (3) with a SiO2 layer (4), applying a SiN layer (5) to the SiO2 layer (4), applying and patterning a resist layer (6), etching through the SiN layer (5) by means of an etch process wherein SiN is etched faster than SiO2, removing the resist (6), etching through the SiO2 layer (4) by means of an etch process wherein SiO2 is etched faster than SiN, removing the SiN layer (5), etching the organic dielectric material (3) using the SiO2 layer (4) as a mask.

    Abstract translation: 一种用于制造包含含有机物质材料(3)的电子器件的方法,包括以下步骤:用SiO 2层(4)覆盖含有机物的材料(3),将SiN层(5)施加到SiO 2层 如图4所示,施加和图案化抗蚀剂层(6),通过蚀刻工艺蚀刻通过SiN层(5),其中SiN比SiO 2蚀刻更快,去除抗蚀剂(6),蚀刻通过SiO 2层(4) 通过蚀刻工艺,其中SiO 2比SiN蚀刻更快,去除SiN层(5),使用SiO 2层(4)作为掩模蚀刻有机电介质材料(3)。

    Radio communication system
    27.
    发明申请
    Radio communication system 失效
    无线通信系统

    公开(公告)号:US20010027105A1

    公开(公告)日:2001-10-04

    申请号:US09814382

    申请日:2001-03-21

    CPC classification number: H04W72/0406 H04W52/50 H04W74/002 H04W74/0833

    Abstract: A radio communication system has a random access channel for the transmission of data (214) from a secondary station to a primary station. Such a channel is intended for use by secondary stations having data (214) to transmit to a primary station while not actually engaged in a call. By enabling access requests (202) to be transmitted with a greater range of possible signatures, a much greater number of degrees of freedom is available to a secondary station requesting access to a random access channel. This enables significantly improved efficiency of resource allocation by increasing the amount of information transmitted to the primary station by the access request (202).

    Abstract translation: 无线电通信系统具有用于从次站到主站传输数据(214)的随机接入信道。 这样的信道旨在由具有数据(214)的次站用于在不实际参与呼叫的情况下发送到主站的次站使用。 通过使得能够以更大范围的可能的签名来传送访问请求(202),对于请求访问随机访问信道的次站,可以使用更大数量的自由度。 这使得能够通过增加通过访问请求(202)发送到主站的信息量来显着提高资源分配的效率。

    Top gate thin-film transistor and method of producing the same
    28.
    发明申请
    Top gate thin-film transistor and method of producing the same 失效
    顶栅薄膜晶体管及其制造方法

    公开(公告)号:US20010026962A1

    公开(公告)日:2001-10-04

    申请号:US09754180

    申请日:2001-01-03

    CPC classification number: H01L29/66757 H01L29/4908 H01L29/78618

    Abstract: A method of producing a top gate thin-film transistor in which an insulated gate structure (14) is formed over an amorphous silicon layer with upper gate conductor (16) directly over the gate insulator layers. The gate conductor is patterned to be narrower than a spacing to be provided between source and drain electrode contacts. Laser annealing of areas of the amorphous silicon layer (12) not shielded by the gate conductor (16) is carried out to form polysilicon portions. The gate insulator layers are formed as a gate insulator layer (14a,14b) of first refractive index, and an overlying surface insulator layer (14c) of second, lower, refractive index. The overlying surface insulator layer has been found to reduce fluctuations in the reflectance of the structure in dependence upon the specific thicknesses of the gate insulator layers. Therefore, the tolerances for the thicknesses of the gate insulator layers can be reduced whilst maintaining control of the laser annealing process.

    Abstract translation: 一种制造顶栅极薄膜晶体管的方法,其中绝缘栅极结构(14)形成在非晶硅层上,上层栅极导体(16)直接位于栅极绝缘体层上。 栅极导体被图案化成比在源极和漏极电极触点之间提供的间隔窄。 进行未被栅极导体(16)屏蔽的非晶硅层(12)的区域的激光退火,以形成多晶硅部分。 栅极绝缘体层形成为具有第一折射率的栅极绝缘体层(14a,14b)和第二,较低折射率的上覆表面绝缘体层(14c)。 已经发现覆盖表面绝缘体层根据栅极绝缘体层的特定厚度减小结构的反射率的波动。 因此,可以减小栅极绝缘体层的厚度的公差,同时保持激光退火过程的控制。

    Image sensor
    29.
    发明申请
    Image sensor 失效
    图像传感器

    公开(公告)号:US20010019080A1

    公开(公告)日:2001-09-06

    申请号:US09736663

    申请日:2000-12-12

    Inventor: Gerard F. Harkin

    CPC classification number: H04N5/378 H04N5/37452

    Abstract: An image sensor (39) comprises a plurality of pixels (10), each pixel comprising a light sensor element (12), wherein a sensor voltage across the element varying depending on the light incident on the element. First and second transistors (14,16) are connected in series between voltage supply lines (18,20). A gate voltage (Vg1) on the first transistor is dependent upon the sensor voltage so that the current flowing through the first transistor (14) is a function of the sensor voltage. The gate voltage (Vg2) of the second transistor is supplied by a feedback circuit (22,24,26) which provides that the current through the first and second transistors (14,16) is substantially equal. The output of the pixel (10) is the gate voltage (Vg2) of the second transistor (16). The image sensor design of the invention avoids the need for storage capacitors to provide pixel gain.

    Abstract translation: 图像传感器(39)包括多个像素(10),每个像素包括光传感器元件(12),其中跨越元件的传感器电压根据入射到元件上的光而变化。 第一和第二晶体管(14,16)串联连接在电压供应线(18,20)之间。 第一晶体管上的栅极电压(Vg1)取决于传感器电压,使得流过第一晶体管(14)的电流是传感器电压的函数。 第二晶体管的栅极电压(Vg2)由反馈电路(22,24,26)提供,该反馈电路提供通过第一和第二晶体管(14,16)的电流基本相等。 像素(10)的输出是第二晶体管(16)的栅极电压(Vg2)。 本发明的图像传感器设计避免了存储电容器提供像素增益的需要。

    Control device for wearable electronics
    30.
    发明申请
    Control device for wearable electronics 失效
    耐磨电子控制装置

    公开(公告)号:US20010017759A1

    公开(公告)日:2001-08-30

    申请号:US09759020

    申请日:2001-01-11

    Abstract: In a garment 10, 12 incorporating an electronic device such as a radio 16, a variable of the device, such as volume, is varied by the use of two cords 22, 24, the electrical resistance of each cord decreasing in accordance with an increase in tension applied to the cord; pulling one cord increases the volume of the radio and pulling the other cord decreases the volume. The stronger the pull, the faster the change in volume. The ends of the cords lie outside the garment and carry toggles 26, 28 for easy operation by a gloved hand. Alternatively the ends of the cord outside the garment may be connected to opposite ends of a manual grip 48.

    Abstract translation: 在装有诸如无线电16的电子设备的衣服10,12中,通过使用两根帘线22,24来改变诸如体积的装置的变量,每根绳索的电阻根据增加而减小 施加在绳索上的张力; 拉一根绳子会增加收音机的音量并拉动另一根电缆减小音量。 拉力越强,体积变化越快。 电线的末端位于衣服外面,并带有切换26,28,以方便手套戴上手。 或者,衣服外部的帘线的端部可以连接到手动把手48的相对端。

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