公开(公告)号：US20110273905A1

公开(公告)日：2011-11-10

申请号：US12842972

申请日：2010-07-23

Applicant: WEN-YU LIN ,  Taso-yuan Fu ,  Hao-ping Cheng

Inventor： WEN-YU LIN ,  Taso-yuan Fu ,  Hao-ping Cheng

IPC: F21V7/22

CPC classification number: G02B6/0021 ,  G02B6/0068 ,  G02B6/0073 ,  G02B6/0086

Abstract: An edge-lit backlight module includes a back plate, a light bar, and a light guide plate. The back plate has a bottom plate and four lateral sides. Each of the lateral sides is perpendicular to the bottom plate and connected to a peripheral edge of the bottom plate. The light bar is disposed on a side of an internal face of one of the lateral sides to leave at least one accommodation space on the lateral side. The light guide plate has at least one extension portion corresponding to the accommodation space. The light guide plate is disposed on the bottom plate, and each extension portion of the light guide plate engages with the corresponding accommodation space for fixing the light guide plate onto the back plate.

Abstract translation: 边缘照明背光模块包括背板，光杆和导光板。 背板具有底板和四个侧面。 每个侧面垂直于底板并连接到底板的周边边缘。 光条设置在侧面之一的内表面的一侧，以在侧面留下至少一个容纳空间。 导光板具有至少一个对应于容纳空间的延伸部分。 导光板设置在底板上，导光板的每个延伸部分与相应的容纳空间配合，用于将导光板固定在背板上。

公开(公告)号：US07943494B2

公开(公告)日：2011-05-17

申请号：US12579779

申请日：2009-10-15

Applicant: Peng Yi Wu ,  Shih Cheng Huang ,  Po Min Tu ,  Ying Chao Yeh ,  Wen Yu Lin ,  Shih Hsiung Chan

Inventor： Peng Yi Wu ,  Shih Cheng Huang ,  Po Min Tu ,  Ying Chao Yeh ,  Wen Yu Lin ,  Shih Hsiung Chan

IPC: H01L21/00 ,  H01L21/66 ,  H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02521 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/12

Abstract: The present invention provides a method for blocking the dislocation propagation of a semiconductor. A semiconductor layer is formed by epitaxial process on a substrate. A plurality of recesses is formed on the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. Thereafter, a blocking layer is formed on each of the plurality of recesses. The aforesaid semiconductor layer undergoes epitaxial process again on the aforesaid semiconductor layer, and laterally overgrows to redirect the dislocation defects.

Abstract translation: 本发明提供一种阻止半导体位错传播的方法。 在衬底上通过外延工艺形成半导体层。 通过蚀刻发生位错的半导体层的脆弱位置，在半导体层上形成多个凹部。 此后，在多个凹部中的每一个上形成阻挡层。 上述半导体层在上述半导体层上再次进行外延处理，并横向过度地重新定位位错缺陷。

公开(公告)号：US20100295084A1

公开(公告)日：2010-11-25

申请号：US12852746

申请日：2010-08-09

Applicant: Po Min Tu ,  Shih Cheng Huang ,  Wen Yu Lin ,  Chih Peng Hsu ,  Shih Hsiung Chan

Inventor： Po Min Tu ,  Shih Cheng Huang ,  Wen Yu Lin ,  Chih Peng Hsu ,  Shih Hsiung Chan

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/30

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Abstract translation: 制造III族氮化物半导体的光电器件的方法包括以下步骤：在原始衬底的表面上形成第一III族氮化物半导体层; 在所述第一III族氮化物半导体层上形成图案化的外延阻挡层; 在所述外延阻挡层上形成第二III族氮化物半导体层，在所述第二III族氮化物半导体层上未被所述外延阻挡层覆盖，然后除去所述外延阻挡层; 在所述第二III族氮化物半导体层上形成第三III族氮化物半导体层; 在第三III族氮化物半导体层上沉积或粘附导电层; 以及释放所述第三III族氮化物半导体层和与所述第二III族氮化物半导体层分离的所述导电层的组合。

公开(公告)号：US20100224900A1

公开(公告)日：2010-09-09

申请号：US12717671

申请日：2010-03-04

Applicant: PENG YI WU ,  SHIH CHENG HUANG ,  CHIH PANG MA ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  SHIH HSIUNG CHAN

Inventor： PENG YI WU ,  SHIH CHENG HUANG ,  CHIH PANG MA ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  SHIH HSIUNG CHAN

IPC: H01L33/44

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/44

Abstract: A semiconductor optoelectronic device with enhanced light extraction efficiency includes a major luminescent area and a secondary luminescent area, wherein the major luminescent area is surrounded by a secondary luminescent area. The secondary luminescent area not only can improve the light extraction efficiency of the major luminescent area, but per se also can luminesce. In addition, one embodiment of the present invention provides a fabricating method for forming the secondary luminescent area.

Abstract translation: 具有增强的光提取效率的半导体光电子器件包括主发光区域和二次发光区域，其中主发光区域被二次发光区域包围。 二次发光区域不仅可以提高主要发光区域的光提取效率，而且本身也可以发光。 此外，本发明的一个实施例提供了形成二次发光区域的制造方法。

公开(公告)号：US20100032649A1

公开(公告)日：2010-02-11

申请号：US12536282

申请日：2009-08-05

Applicant: WEN YU LIN ,  SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  PENG YI WU ,  SHIH HSIUNG CHAN

Inventor： WEN YU LIN ,  SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  PENG YI WU ,  SHIH HSIUNG CHAN

IPC: H01L33/00

CPC classification number: H01L33/04 ,  H01L33/32

Abstract: A light emitting device (LED), in which a reduced polarization interlayer is formed between an electron blocking layer (EBL) and an active layer of the LED, is disclosed. The reduced polarization interlayer is made of AlxInyGa1-x-yN, where 0≦x≦1 and 0≦y≦1.

Abstract translation: 公开了一种在电子阻挡层（EBL）和LED的有源层之间形成减薄偏振中间层的发光器件（LED）。 减薄偏振中间层由Al x In y Ga 1-x-y N制成，其中0 <= x <= 1且0 <= y <= 1。

公开(公告)号：US20080007937A1

公开(公告)日：2008-01-10

申请号：US11309182

申请日：2006-07-07

Applicant: Hung-Yi Ou Yang ,  Wen-Yu Lin ,  Chia-Hung Chen ,  Wen-Chi Hung

Inventor： Hung-Yi Ou Yang ,  Wen-Yu Lin ,  Chia-Hung Chen ,  Wen-Chi Hung

IPC: G09F13/04

CPC classification number: G02F1/133608 ,  G02F1/133604

Abstract: A direct-type backlight module is disclosed, which includes a frame, at least one lamp support structure, at least one lamp and a diffusion plate. The frame has a bottom plate, and at least one opening is disposed in the bottom plate. The lamp support structure including a base and at least one holding and fixing member is fixed in the opening, wherein the base is disposed outside the bottom plate of the frame, and the holding and fixing member is disposed on the base and through the opening. The holding and fixing member has a lamp holding portion and a fixing portion, wherein the fixing portion is fixed in the opening, and the lamp holding portion is suitable for holding the lamp. The diffusion plate is disposed above the lamp.

Abstract translation: 公开了一种直接型背光模块，其包括框架，至少一个灯支撑结构，至少一个灯和扩散板。 框架具有底板，并且至少一个开口设置在底板中。 包括基座和至少一个保持固定构件的灯支撑结构被固定在开口中，其中基座设置在框架的底板的外侧，并且保持固定构件设置在基座上并穿过开口。 保持固定构件具有灯保持部和固定部，其中固定部固定在开口中，并且灯保持部适合于保持灯。 扩散板设置在灯的上方。

公开(公告)号：US08866161B2

公开(公告)日：2014-10-21

申请号：US13314186

申请日：2011-12-08

Applicant: Shih-Cheng Huang ,  Po-Min Tu ,  Ying-Chao Yeh ,  Wen-Yu Lin ,  Peng-Yi Wu ,  Shih-Hsiung Chan

Inventor： Shih-Cheng Huang ,  Po-Min Tu ,  Ying-Chao Yeh ,  Wen-Yu Lin ,  Peng-Yi Wu ,  Shih-Hsiung Chan

IPC: H01L29/06 ,  H01L27/15 ,  H01L21/02 ,  H01L33/00 ,  H01S5/323

CPC classification number: H01L21/0254 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02656 ,  H01L33/007 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

Abstract: A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.

Abstract translation: 半导体器件的结构包括第一半导体层; 在所述第一半导体层的表面上的中间层; 在所述中间层上的第二半导体层，其中所述中间层和所述第二半导体层被集成到一组子结构中; 以及在所述第二半导体层上的半导体发光器件。

公开(公告)号：US08574939B2

公开(公告)日：2013-11-05

申请号：US12836075

申请日：2010-07-14

Applicant: Shih Cheng Huang ,  Po Min Tu ,  Peng Yi Wu ,  Wen Yu Lin ,  Chih Pang Ma ,  Tzu Chien Hong ,  Chia Hui Shen

Inventor： Shih Cheng Huang ,  Po Min Tu ,  Peng Yi Wu ,  Wen Yu Lin ,  Chih Pang Ma ,  Tzu Chien Hong ,  Chia Hui Shen

IPC: H01L33/22

CPC classification number: H01L33/36 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22

Abstract: A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.

Abstract translation: 提出了一种提高光提取效率的半导体光电结构及其制造方法。 半导体光电结构包括形成在半导体光电子结构的有源层下方的连续沟槽，以反射来自有源层的光，从而通过光输出表面引导更多的光，从而增加来自半导体光电子结构的光强度。

公开(公告)号：US08093082B2

公开(公告)日：2012-01-10

申请号：US12396750

申请日：2009-03-03

Applicant: Shih Cheng Huang ,  Po Min Tu ,  Ying Chao Yeh ,  Wen Yu Lin ,  Peng Yi Wu ,  Chih Peng Hsu ,  Shih Hsiung Chan

Inventor： Shih Cheng Huang ,  Po Min Tu ,  Ying Chao Yeh ,  Wen Yu Lin ,  Peng Yi Wu ,  Chih Peng Hsu ,  Shih Hsiung Chan

IPC: H01L21/00

CPC classification number: H01L33/007 ,  H01L33/0079

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.

Abstract translation: 一种制造III族氮化物半导体的光电器件的方法，其中所述方法包括以下步骤：在临时衬底的表面上形成第一III族氮化物半导体层; 使用光刻和蚀刻工艺图案化第一III族氮化物半导体层; 在所述图案化的第一III族氮化物半导体层上形成第二III族氮化物半导体层; 在所述第二III族氮化物半导体层上形成导电层; 并且通过去除第一III族氮化物半导体层来释放临时衬底，以获得第二III族氮化物半导体层和导电层的复合物。

公开(公告)号：US07824942B2

公开(公告)日：2010-11-02

申请号：US12426010

申请日：2009-04-17

Applicant: Po Min Tu ,  Shih Cheng Huang ,  Wen Yu Lin ,  Chih Peng Hsu ,  Shih Hsiung Chan

Inventor： Po Min Tu ,  Shih Cheng Huang ,  Wen Yu Lin ,  Chih Peng Hsu ,  Shih Hsiung Chan

IPC: H01L21/00

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Abstract translation: 制造III族氮化物半导体的光电器件的方法包括以下步骤：在原始衬底的表面上形成第一III族氮化物半导体层; 在所述第一III族氮化物半导体层上形成图案化的外延阻挡层; 在所述外延阻挡层上形成第二III族氮化物半导体层，在所述第二III族氮化物半导体层上未被所述外延阻挡层覆盖，然后除去所述外延阻挡层; 在所述第二III族氮化物半导体层上形成第三III族氮化物半导体层; 在第三III族氮化物半导体层上沉积或粘附导电层; 以及释放所述第三III族氮化物半导体层和与所述第二III族氮化物半导体层分离的所述导电层的组合。