公开(公告)号：US20200013591A1

公开(公告)日：2020-01-09

申请号：US16276040

申请日：2019-02-14

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT ,  Craig Walter McCoy

IPC: H01J37/32 ,  H01L21/677 ,  H01L21/67 ,  H01L21/673

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

公开(公告)号：US20180308668A1

公开(公告)日：2018-10-25

申请号：US15898178

申请日：2018-02-15

Applicant: YIELD ENGINEERING SYSTEMS, INC.

Inventor： WILLIAM MOFFAT ,  Craig Walter McCoy

IPC: H01J37/32

CPC classification number: H01J37/32623 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/3343

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

公开(公告)号：US20250079213A1

公开(公告)日：2025-03-06

申请号：US18238647

申请日：2023-08-28

Applicant: Yield Engineering Systems, Inc.

Inventor： Matthew Williams ,  Hunter Braverman ,  Hratch Mouradian ,  Sossan Wali ,  Bob Hanopulus ,  Al Stone

IPC: H01L21/673 ,  B65D43/12 ,  B65D85/48

Abstract: A carrier configured to support multiple panels includes a housing having a pair of opposing sidewalls extending in a first direction and a plurality of trays stacked between the pair of opposing sidewalls in the first direction. A lid is slidably coupled to the pair of opposing sidewalls and configured to be slid on the housing between an open configuration and a closed configuration. The plurality of trays are supported in the housing such that, in the closed configuration of the lid, two trays of the plurality of trays are blocked from moving relative to one another in the first direction, and in the open configuration of the lid, the two trays are configured to be moved relative to one another in the first direction.

公开(公告)号：US20250038013A1

公开(公告)日：2025-01-30

申请号：US18227025

申请日：2023-07-27

Applicant: Yield Engineering Systems, Inc.

Inventor： Vladimir Kudriavtsev ,  Rajeev Bajaj ,  Christopher Lane ,  Kevin McGillivray ,  Sossan Wali ,  Bob Hanopulus ,  Hratch Mouradian

IPC: H01L21/67 ,  C23C18/16 ,  C23C18/40

Abstract: An apparatus for wet chemical processing includes a processing tank that configured to contain a liquid chemical composition and support a plurality of substrates in the liquid chemical composition. A flow plate may be disposed in the processing tank below the plurality of substrates. The flow plate may include a plurality of liquid nozzles configured to direct the liquid chemical composition into the tank and a plurality of gas outlets configured to direct a gas into the tank.

公开(公告)号：US20250029846A1

公开(公告)日：2025-01-23

申请号：US18223112

申请日：2023-07-18

Applicant: Yield Engineering Systems, Inc.

Inventor： Al Stone ,  Louis Navarro

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/673 ,  H01L21/677 ,  H01L21/68 ,  H01L21/687

Abstract: An apparatus to separate a wafer from a pre-sliced boule of wafers may include a conveyor configured to move the pre-sliced boule of wafers from a first end to a second end. A lift yoke, positioned proximate the second end, may include a wafer slot configured to receive a first wafer of the pre-sliced boule therein when the pre-sliced boule is positioned at the second end. A pusher blade may be configured to raise the lift yoke along with the first wafer positioned in its wafer slot from a first position to a second position. The wafer slot may be vertically aligned with the conveyor at the first position and the wafer slot may be positioned above the conveyor in the second position.

公开(公告)号：US20240357749A1

公开(公告)日：2024-10-24

申请号：US18232403

申请日：2023-08-10

Applicant: Yield Engineering Systems, Inc.

Inventor： Kenneth Sautter ,  Syndee Young ,  Charudatta Galande

IPC: H05K3/38 ,  H05K3/14 ,  H05K3/42

CPC classification number: H05K3/389 ,  H05K1/0353 ,  H05K3/146 ,  H05K3/382 ,  H05K3/386 ,  H05K3/42 ,  Y10T29/49155

Abstract: An electronic device having a substrate with a metal structure, a mono-layer coating of a selected silane composition on a surface of the metal structure, and an organic layer on the mono-layer coating, wherein the mono-layer coating improves the interfacial adhesion strength between the metal surface and the organic material.

公开(公告)号：USRE49802E1

公开(公告)日：2024-01-16

申请号：US17219215

申请日：2021-03-31

Applicant: Yield Engineering Systems, Inc.

Inventor： William Moffat

IPC: H01L21/67 ,  B32B27/28

CPC classification number: H01L21/67034 ,  B32B27/281 ,  B32B2250/24 ,  B32B2274/00

Abstract: A process for the drying, and subsequent imidization, of polyimide precursors which minimizes or eliminates voids and which minimizes or eliminates discoloration. The process uses a sequential set of descending pressure operations that allow for time efficient processing of wafers. The set of descending pressure operations are interspersed with evacuation processes using heated gasses, which combine heating and byproduct evacuation. The process results in layers with reduced or eliminated voiding, discoloration, and solvent retention.

公开(公告)号：US11818849B1

公开(公告)日：2023-11-14

申请号：US18137876

申请日：2023-04-21

Applicant: Yield Engineering Systems, Inc.

Inventor： Kenneth Sautter ,  Syndee Young ,  Charudatta Galande

IPC: H05K3/38 ,  H05K3/42 ,  H05K3/14

CPC classification number: H05K3/389 ,  H05K3/146 ,  H05K3/382 ,  H05K3/386 ,  H05K3/42 ,  Y10T29/49155

Abstract: A method of improving the adhesion of a metal-organic interface in an electronic device includes providing a substrate with a metal structure, depositing a mono-layer of a selected silane composition on a surface of the metal structure with a vapor of the selected silane composition, and coating the treated surface with an organic material.

公开(公告)号：US11688621B2

公开(公告)日：2023-06-27

申请号：US17218697

申请日：2021-03-31

Applicant: Yield Engineering Systems, Inc.

Inventor： Mark William Curry ,  Ronald R. Stevens ,  Craig W. McCoy ,  Charudatta Galande ,  Gabriel Ormonde

IPC: H01L21/677 ,  F27B17/00

CPC classification number: H01L21/67781 ,  F27B17/0025 ,  H01L21/67754 ,  H01L21/67757

Abstract: A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate.

公开(公告)号：US20230060603A1

公开(公告)日：2023-03-02

申请号：US17872320

申请日：2022-07-25

Applicant: Yield Engineering Systems, Inc.

Inventor： Lei Jing ,  M Ziaul Karim ,  Kenneth Sautter ,  Kang Song

IPC: B23K1/015 ,  H01L23/00 ,  B23K1/008 ,  B23K3/08

Abstract: A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.