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公开(公告)号：US20110287361A1
公开(公告)日：2011-11-24
申请号：US13095533
申请日：2011-04-27
Applicant: Young Cheol BAE , Thomas CARDOLACCIA , Yi LIU
Inventor： Young Cheol BAE , Thomas CARDOLACCIA , Yi LIU
IPC: G03F7/20 , C07D207/24 , G03F7/004
CPC classification number: G03F7/0045 , C07C309/10 , C07C309/12 , C07C309/17 , C07C381/12 , C07D207/27 , G03F7/0046
Abstract: New photoacid generator compounds are provided that comprise a nitrogen-base functional component of the structure —C(═O)N
Abstract translation: 提供了新的光致酸发生剂化合物，其包含结构-C（= O）N'的氮 - 碱官能组分。 还提供了包含本发明的一种或多种PAG的光致抗蚀剂组合物。
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公开(公告)号：US20100330471A1
公开(公告)日：2010-12-30
申请号：US12825096
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
IPC: G03F7/20
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of adjusting dimensions of resist patterns are provided. The methods allow for control of photoresist pattern dimensions and find particular applicability in resist pattern rework in semiconductor device manufacturing.
Abstract translation: 提供调整抗蚀剂图案尺寸的方法。 这些方法允许控制光致抗蚀剂图案尺寸，并且在半导体器件制造中找到抗蚀剂图案返工的特别适用性。
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23.发明授权公开(公告)号：US08980536B2
公开(公告)日：2015-03-17
申请号：US13407467
申请日：2012-02-28
Applicant: Young Cheol Bae , Seung-Hyun Lee
Inventor： Young Cheol Bae , Seung-Hyun Lee
CPC classification number: G03F7/325 , G03F7/094 , G03F7/2041 , Y10T428/24355
Abstract: Provided are photoresist developer compositions that include a mixture of organic solvents. Also provided are methods of forming photolithographic patterns using negative tone development, coated substrates and electronic devices formed by the methods. The methods find particular applicability in the manufacture of electronic devices.
Abstract translation: 提供了包括有机溶剂的混合物的光致抗蚀剂显影剂组合物。 还提供了使用负色调显影，涂布基板和通过该方法形成的电子器件形成光刻图案的方法。 该方法在电子设备的制造中具有特别的适用性。
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24.发明授权公开(公告)号：US08921031B2
公开(公告)日：2014-12-30
申请号：US13607733
申请日：2012-09-09
Applicant: Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
Inventor： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
CPC classification number: C09D133/16 , C08K5/17 , C08K5/3415 , C08K5/3435 , C09D133/10 , G03F7/004 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/30 , G03F7/325 , H01L21/3081 , Y10S430/114 , Y10S430/12
Abstract: Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供光刻胶外涂层组合物，涂覆有外涂层组合物的基材和通过负色调显影方法形成电子器件的方法。 组合物，涂覆的基底和方法在半导体器件的制造中特别适用。
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25.发明授权Polymers, photoresist compositions and methods of forming photolithographic patterns 有权聚合物，光致抗蚀剂组合物和形成光刻图案的方法公开(公告)号：US08628911B2
公开(公告)日：2014-01-14
申请号：US13309843
申请日：2011-12-02
Applicant: Young Cheol Bae , David Richard Wilson , Jibin Sun
Inventor： Young Cheol Bae , David Richard Wilson , Jibin Sun
CPC classification number: G03F7/0392 , C08F220/28 , C08F2220/283 , C08F2220/285 , G03F7/0395 , G03F7/0397 , G03F7/2041 , G03F7/325
Abstract: Provided are polymers and photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供了可用于形成光刻图案的聚合物和光致抗蚀剂组合物。 还提供了涂覆有光致抗蚀剂组合物的基材和形成光刻图案的方法。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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Patent Agency Ranking
公开(公告)号：US08507185B2
公开(公告)日：2013-08-13
申请号：US12825170
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
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公开(公告)号：US08465901B2
公开(公告)日：2013-06-18
申请号：US12825096
申请日：2010-06-28
Applicant: Young Cheol Bae , Thomas Cardolaccia , Yi Liu
Inventor： Young Cheol Bae , Thomas Cardolaccia , Yi Liu
CPC classification number: H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
Abstract: Methods of adjusting dimensions of resist patterns are provided. The methods allow for control of photoresist pattern dimensions and find particular applicability in resist pattern rework in semiconductor device manufacturing.
Abstract translation: 提供调整抗蚀剂图案尺寸的方法。 这些方法允许控制光致抗蚀剂图案尺寸，并且在半导体器件制造中找到抗蚀剂图案返工的特别适用性。
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28.发明申请MONOMERS, POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS 有权单体，聚合物，光电组合物和形成光刻图案的方法公开(公告)号：US20130011783A1
公开(公告)日：2013-01-10
申请号：US13341931
申请日：2011-12-31
Applicant: Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
Inventor： Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
IPC: C08F224/00 , C07D407/06 , G03F7/20 , C08F124/00 , G03F7/004
CPC classification number: G03F7/0397 , C07D307/93 , C07D317/24 , C08F24/00 , C08F220/28 , G03F7/0382 , G06F7/38 , Y10S430/111
Abstract: Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供含有缩醛部分的（甲基）丙烯酸酯单体，含有由这种单体形成的单元的聚合物和含有这种聚合物的光致抗蚀剂组合物。 单体，聚合物和光致抗蚀剂组合物可用于形成光刻图案。 还提供了涂覆有光致抗蚀剂组合物的基材，形成光刻图案的方法和电子装置。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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29.发明申请POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS 有权聚合物，光电组合物和形成光刻图案的方法公开(公告)号：US20120288794A1
公开(公告)日：2012-11-15
申请号：US13341939
申请日：2011-12-31
Applicant: Young Cheol BAE , Matthew M. Meyer , Jibin Sun , Seung-Hyun Lee , Jong Keun Park
Inventor： Young Cheol BAE , Matthew M. Meyer , Jibin Sun , Seung-Hyun Lee , Jong Keun Park
IPC: C08F224/00 , G03F7/20 , G03F7/004
CPC classification number: G03F7/2041 , C08F220/28 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/325
Abstract: Provided are polymers containing a unit having a particular acetal moiety and photoresist compositions containing such a polymer. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, photoresist compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供的是含有具有特定缩醛部分的单元和含有这种聚合物的光致抗蚀剂组合物的聚合物。 还提供了涂覆有光致抗蚀剂组合物的基材和形成光刻图案的方法。 聚合物，光致抗蚀剂组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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30.发明申请公开(公告)号：US20110294069A1
公开(公告)日：2011-12-01
申请号：US13149573
申请日：2011-05-31
Applicant: Young Cheol Bae , Deyan Wang , Thomas Cardolaccia , Seokho Kang , Rosemary Bell
Inventor： Young Cheol Bae , Deyan Wang , Thomas Cardolaccia , Seokho Kang , Rosemary Bell
CPC classification number: G03F7/0382 , C07C69/54 , C07C2603/74 , C08F2220/283 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/32 , G03F7/325 , G03F7/40 , H01L21/0274 , H01L21/0276
Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Abstract translation: 提供了通过负色调显影方法形成光刻图案的光致抗蚀剂组合物。 还提供了通过负色调显影方法形成光刻图案的方法和涂覆有光致抗蚀剂组合物的基材。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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