公开(公告)号：US12068156B2

公开(公告)日：2024-08-20

申请号：US18305875

申请日：2023-04-24

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

公开(公告)号：US12033861B2

公开(公告)日：2024-07-09

申请号：US17340178

申请日：2021-06-07

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  David Kurt de Roest

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/08 ,  C23C16/455 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/48 ,  H01L21/768

CPC classification number: H01L21/28562 ,  C23C16/0209 ,  C23C16/04 ,  C23C16/047 ,  C23C16/06 ,  C23C16/08 ,  C23C16/45527 ,  H01L21/28229 ,  H01L21/30655 ,  H01L21/32051 ,  H01L21/321 ,  H01L21/4846 ,  H01L21/76879

Abstract: A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11851755B2

公开(公告)日：2023-12-26

申请号：US16952363

申请日：2020-11-19

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel ,  David Kurt de Roest ,  Bert Jongbloed ,  Dieter Pierreux

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/44 ,  H01L21/033 ,  C23C16/448 ,  C23C16/26 ,  C23C16/52 ,  C23C16/56

CPC classification number: C23C16/45523 ,  C23C16/04 ,  C23C16/042 ,  C23C16/045 ,  C23C16/26 ,  C23C16/448 ,  C23C16/4412 ,  C23C16/4485 ,  C23C16/45527 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0332 ,  H01L21/0337

Abstract: A sequential infiltration synthesis apparatus comprising:



a reaction chamber constructed and arranged to hold at least a first substrate;
a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and,
a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by:
activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber;
activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and,
activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber. The program in the memory is programmed with the first period T1 longer than the second period T2.

公开(公告)号：US20210247693A1

公开(公告)日：2021-08-12

申请号：US17231299

申请日：2021-04-15

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Krzysztof Kamil Kachel ,  David Kurt de Roest

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/16

Abstract: The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

公开(公告)号：US20210134586A1

公开(公告)日：2021-05-06

申请号：US17064865

申请日：2020-10-07

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

公开(公告)号：US20210111025A1

公开(公告)日：2021-04-15

申请号：US17065925

申请日：2020-10-08

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US10403504B2

公开(公告)日：2019-09-03

申请号：US15726222

申请日：2017-10-05

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  David Kurt de Roest

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/3205 ,  C23C16/455 ,  H01L21/48 ,  C23C16/06 ,  C23C16/04

Abstract: A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US12222644B2

公开(公告)日：2025-02-11

申请号：US17231299

申请日：2021-04-15

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Krzysztof Kamil Kachel ,  David Kurt de Roest

IPC: G03F7/004 ,  C23C16/455 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027

Abstract: The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

公开(公告)号：US20240419068A1

公开(公告)日：2024-12-19

申请号：US18740139

申请日：2024-06-11

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest ,  Joäo Antunes Afonso ,  Steaphan Mark Wallace ,  Yoann Tomczak ,  Renè Henricus Jozef Vervuurt

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/16

Abstract: Structures and related systems and methods for dose reduction in extreme ultraviolet (EUV) lithography. The structures can comprise a dose reducing layer, an adhesion layer, and a resist.

公开(公告)号：US12169361B2

公开(公告)日：2024-12-17

申请号：US16931275

申请日：2020-07-16

Applicant: ASM IP Holding B.V.

Inventor： Ivo Raaijmakers ,  Daniele Piumi ,  Ivan Zyulkov ,  David Kurt de Roest ,  Michael Eugene Givens

IPC: H01L21/311 ,  G03F7/16

Abstract: A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.