公开(公告)号：US10859930B2

公开(公告)日：2020-12-08

申请号：US16665022

申请日：2019-10-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper Menger ,  Paul Cornelis Hubertus Aben ,  Everhardus Cornelis Mos

IPC: G03F9/00

Abstract: Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.

公开(公告)号：US09594029B2

公开(公告)日：2017-03-14

申请号：US14355962

申请日：2012-11-22

Applicant: ASML Netherlands B.V.

Inventor： Wouter Lodewijk Elings ,  Franciscus Bernardus Maria Van Bilsen ,  Christianus Gerardus Maria De Mol ,  Everhardus Cornelis Mos ,  Hoite Pieter Theodoor Tolsma ,  Peter Ten Berge ,  Paul Jacques Van Wijnen ,  Leonardus Henricus Marie Verstappen ,  Gerald Dicker ,  Reiner Maria Jungblut ,  Li Chung-Hsun

IPC: G01N21/95 ,  G01B11/02 ,  G01B11/14 ,  G05B19/418 ,  G03F7/20 ,  G01N21/956 ,  H01L21/66

CPC classification number: G01B11/002 ,  G01B11/02 ,  G01B11/14 ,  G01B11/26 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G05B19/41875 ,  G05B2219/37224 ,  H01L22/20 ,  Y02P90/20 ,  Y02P90/22

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced (2506) defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used (2508) to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked (2510) to at least partially recompose the measurement results according to the sample plan.

Abstract translation: 在测量晶片衬底的特性（例如临界尺寸或覆盖层）时，产生用于测量衬底性质的采样计划（2506），其中采样计划包括多个次采样图。 采样计划可以被约束到预定的固定数量的测量点，并且被使用（2508）来控制检查装置，以使用对于各个基板的不同的子采样计划来执行多个基板的属性的多个测量 ，结果（2510）根据样本计划至少部分地重新组合测量结果。

公开(公告)号：USRE49460E1

公开(公告)日：2023-03-14

申请号：US14637358

申请日：2015-03-03

Applicant: ASML Netherlands B.V.

Inventor： Everhardus Cornelis Mos ,  Hubertus Johannes Gertrudus Simons ,  Peter Ten Berge ,  Nicole Schoumans ,  Michael Kubis ,  Paul Cornelis Hubertus Aben

IPC: G06F30/398 ,  G03F1/36 ,  G03F7/20

Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.

公开(公告)号：US11480884B2

公开(公告)日：2022-10-25

申请号：US16936867

申请日：2020-07-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis Mos ,  Jochem Sebastiaan Wildenberg ,  Erik Johannes Maria Wallerbos ,  Maurits Van Der Schaar ,  Frank Staals ,  Franciscus Hendricus Arnoldus Elich

IPC: G03F7/20

Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

公开(公告)号：USRE49199E1

公开(公告)日：2022-09-06

申请号：US14629351

申请日：2015-02-23

Applicant: ASML Netherlands B.V.

Inventor： Everhardus Cornelis Mos ,  Hubertus Johannes Gertrudus Simons ,  Peter Ten Berge ,  Nicole Schoumans ,  Michael Kubis ,  Paul Cornelis Hubertus Aben

IPC: G06F30/398 ,  G03F1/36 ,  G03F7/20

Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.

公开(公告)号：US11378891B2

公开(公告)日：2022-07-05

申请号：US17023474

申请日：2020-09-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Davit Harutyunyan ,  Fei Jia ,  Frank Staals ,  Fuming Wang ,  Hugo Thomas Looijestijn ,  Cornelis Johannes Rijnierse ,  Maxim Pisarenco ,  Roy Werkman ,  Thomas Theeuwes ,  Tom Van Hemert ,  Vahid Bastani ,  Jochem Sebastiaan Wildenberg ,  Everhardus Cornelis Mos ,  Erik Johannes Maria Wallerbos

IPC: G03F7/20 ,  G05B13/04 ,  H01L21/66

Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method includes obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

公开(公告)号：US11300891B2

公开(公告)日：2022-04-12

申请号：US17111050

申请日：2020-12-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper Menger ,  Paul Cornelis Hubertus Aben ,  Everhardus Cornelis Mos

IPC: G03F9/00

Abstract: Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.

公开(公告)号：US10802408B2

公开(公告)日：2020-10-13

申请号：US16343168

申请日：2017-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis Mos ,  Jochem Sebastiaan Wildenberg ,  Erik Johannes Maria Wallerbos ,  Maurits Van Der Schaar ,  Frank Staals ,  Franciscus Hendricus Arnoldus Elich

IPC: G03F7/20

Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

公开(公告)号：US10746668B2

公开(公告)日：2020-08-18

申请号：US16380223

申请日：2019-04-10

Applicant: ASML Netherlands B.V.

Inventor： Wouter Lodewijk Elings ,  Franciscus Bernardus Maria Van Bilsen ,  Christianus Gerardus Maria De Mol ,  Everhardus Cornelis Mos ,  Hoite Pieter Theodoor Tolsma ,  Peter Ten Berge ,  Paul Jacques Van Wijnen ,  Leonardus Henricus Marie Verstappen ,  Gerald Dicker ,  Reiner Maria Jungblut ,  Chung-Hsun Li

IPC: G01N21/95 ,  G01B11/14 ,  G01B11/02 ,  G01N21/956 ,  G03F7/20 ,  H01L21/66 ,  G05B19/418 ,  G01B11/00 ,  G01B11/26

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

公开(公告)号：US10725372B2

公开(公告)日：2020-07-28

申请号：US15546583

申请日：2016-01-20

Applicant: ASML Netherlands B.V.

Inventor： Wim Tjibbo Tel ,  Marinus Jochemsen ,  Frank Staals ,  Christopher Prentice ,  Laurent Michel Marcel Depre ,  Johannes Marcus Maria Beltman ,  Roy Werkman ,  Jochem Sebastiaan Wildenberg ,  Everhardus Cornelis Mos

IPC: G06F17/50 ,  G03F1/70 ,  G03F1/36 ,  G03F1/22 ,  G06T7/00 ,  G06F30/398 ,  G06F119/18 ,  G06F30/20 ,  G06F30/367

Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.