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公开(公告)号：US10261427B2
公开(公告)日：2019-04-16
申请号：US15869661
申请日：2018-01-12
Applicant: ASML Netherlands B.V.
Inventor： Si-Han Zeng , Yue-Lin Peng , Jen-Yu Fang , Arie Jeffrey Den Boef , Alexander Straaijer , Ching-Yi Hung , Patrick Warnaar
Abstract: Disclosed are a method, computer program and associated apparatuses for measuring a parameter of a lithographic process. The method comprising the steps of: obtaining first measurements comprising measurements of structural asymmetry relating to a plurality of first structures, each of said plurality of measurements of structural asymmetry corresponding to a different measurement combination of measurement radiation and a value for at least a first parameter; obtaining a plurality of second measurements of target asymmetry relating to a plurality of targets, each of said plurality of measurements of target asymmetry corresponding to one of said different measurement combinations, determining a relationship function describing the relationship between said first measurements and said second measurements, for each of said measurement combinations; determining, from said relationship function, a corrected overlay value, said corrected overlay value being corrected for structural contribution due to structural asymmetry in at least said first structure.
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22.发明申请公开(公告)号：US20180321599A1
公开(公告)日：2018-11-08
申请号：US15967861
申请日：2018-05-01
Applicant: ASML Netherlands B.V.
Inventor： Murat BOZKURT , Maurits Van Der Schaar , Patrick Warnaar , Martin Jacobus Johan Jak , Mohammadreza Hajiahmadi , Grzegorz Grzela , Lukasz Jerzy Macht
IPC: G03F7/20
CPC classification number: G03F7/70633 , G01N21/4788 , G01N21/9501 , G01N21/956 , G03F7/70616 , G03F7/7085
Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
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公开(公告)号：US09753379B2
公开(公告)日：2017-09-05
申请号：US14794013
申请日：2015-07-08
Applicant: ASML Netherlands B.V.
Inventor： Amandev Singh , Henricus Petrus Maria Pellemans , Patrick Warnaar
CPC classification number: G03F7/70491 , G01J3/2823 , G01J3/45 , G01N21/4788 , G01N2201/06113 , G03F7/70625 , G03F7/70633
Abstract: Inspection apparatus (100) is used for measuring parameters of targets on a substrate. Coherent radiation follows an illumination path (solid rays) for illuminating target (T). A collection path (dashed rays) collects diffracted radiation from the target and delivers it to a lock-in image detector (112). A reference beam following a reference path (dotted rays). An acousto-optical modulator (108) shifts the optical frequency of the reference beam so that the intensity of radiation at the lock-in detector includes a time-varying component having a characteristic frequency corresponding to a difference between the frequencies of the diffracted radiation and the reference radiation. The lock-in image detector records two-dimensional image information representing both amplitude and phase of the time-varying component. A second reference beam with a different shift (110) follows a second reference path (dot-dash rays). Interference between the two reference beams can be used for intensity normalization.
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公开(公告)号：US09535342B2
公开(公告)日：2017-01-03
申请号：US14224532
申请日：2014-03-25
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Patrick Warnaar
CPC classification number: G03F9/00 , G03F7/70483 , G03F7/70633
Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.
Abstract translation: 公开了用于测量由基板上的光刻工艺形成的目标结构的方法。 目标内的光栅或其他结构小于测量光学系统的照明点和视场。 组件结构的图像的位置在测量之间变化，并且应用第一类型的校正以减少由与来自不同位置的光路的差异引起的对测量的强度的影响。 可以在光学系统的视野内同时成像多个结构，并且每个结构被校正为其各自的位置。 测量可以包括在不同照明和/或成像模式下的相同目标的第一和第二图像，例如在暗场测量应用中。 可以应用第二类型的校正来减少第一和第二照明模式或成像之间的不对称性的影响，例如允许在半导体器件制造过程中更准确地过度测量。
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25.发明申请Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method 有权计量方法和检验仪器，平版印刷系统和器件制造方法公开(公告)号：US20160033877A1
公开(公告)日：2016-02-04
申请号：US14824696
申请日：2015-08-12
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde SMILDE , Arno Jan Bleeker , Willem Marie Julia Marcel Coene , Patrick Warnaar , Michael Kubis
CPC classification number: G03F7/70633 , G03F7/70483 , G03F7/70625 , G03F7/70641 , G06N99/005
Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.
Abstract translation: 公开了用于测量由基板上的光刻工艺形成的目标结构的方法。 目标内的光栅结构小于测量光学系统的照明点和视场。 光学系统具有通向光瞳平面成像传感器的第一分支和通向基板平面成像传感器的第二分支。 空间光调制器被布置在光学系统的第二分支的中间光瞳平面中。 SLM赋予可编程的衰减模式，其可用于校正第一和第二照明模式或成像之间的不对称性。 通过使用特定的目标设计和机器学习过程，衰减模式也可以被编程为充当滤波器功能，增强对诸如焦点的特定参数的敏感性。
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Patent Agency Ranking
公开(公告)号：US12242203B2
公开(公告)日：2025-03-04
申请号：US18001255
申请日：2021-06-08
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Patrick Warnaar , Franciscus Godefridus Casper Bijnen , Olger Victor Zwier
IPC: G03F7/00
Abstract: Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.
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27.发明授权公开(公告)号：US12112260B2
公开(公告)日：2024-10-08
申请号：US16424811
申请日：2019-05-29
Applicant: ASML Netherlands B.V.
Inventor： Lorenzo Tripodi , Patrick Warnaar , Grzegorz Grzela , Mohammadreza Hajiahmadi , Farzad Farhadzadeh , Patricius Aloysius Jacobus Tinnemans , Scott Anderson Middlebrooks , Adrianus Cornelis Matheus Koopman , Frank Staals , Brennan Peterson , Anton Bernhard Van Oosten
CPC classification number: G06N3/08 , G01B11/02 , G01N21/55 , G06T7/0006 , G06T7/001 , G01B2210/56 , G06T2207/20081 , G06T2207/20084 , G06T2207/30148
Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.
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公开(公告)号：US12105432B2
公开(公告)日：2024-10-01
申请号：US17625640
申请日：2020-07-07
Applicant: ASML Netherlands B.V.
Inventor： Narjes Javaheri , Maurits Van Der Schaar , Tieh-Ming Chang , Hilko Dirk Bos , Patrick Warnaar , Samira Bahrami , Mohammadreza Hajiahmadi , Sergey Tarabrin , Mykhailo Semkiv
IPC: G03F7/00
CPC classification number: G03F7/70633
Abstract: Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.
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29.发明公开公开(公告)号：US20230273255A1
公开(公告)日：2023-08-31
申请号：US18143825
申请日：2023-05-05
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Patrick Warnaar , Vasco Tomas Tenner , Maurits Van Der Schaar
IPC: G01R31/265
CPC classification number: G01R31/2656
Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.
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30.发明授权公开(公告)号：US11709436B2
公开(公告)日：2023-07-25
申请号：US17460947
申请日：2021-08-30
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Patrick Warnaar , Vasco Tomas Tenner , Maurits Van Der Schaar
IPC: G01R31/265
CPC classification number: G01R31/2656
Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.
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