公开(公告)号：US20110101335A1

公开(公告)日：2011-05-05

申请号：US12912196

申请日：2010-10-26

申请人： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

IPC分类号： H01L29/12 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

摘要： An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

摘要翻译： 本发明的目的是提供一种包括具有稳定电特性的氧化物半导体的半导体器件。 在氧化物半导体层上形成具有以悬挂键为代表的许多缺陷的绝缘层，其间具有氧过剩混合区域或氧过剩氧化物绝缘层，由此氧化物半导体层中的诸如氢或水分的杂质（ 氢原子或包含氢原子如H 2 O的化合物）通过氧过剩混合区域或氧 - 过量氧化物绝缘层移动并扩散到绝缘层中。 因此，氧化物半导体层的杂质浓度降低。

公开(公告)号：US20110068335A1

公开(公告)日：2011-03-24

申请号：US12887646

申请日：2010-09-22

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

摘要翻译： 本发明的目的是提供具有良好电气特性的高度可靠的半导体器件以及包括半导体器件作为开关元件的显示器件。 在包括氧化物半导体层的晶体管中，设置在氧化物半导体层的至少一个表面侧上的针状晶体在垂直于该表面的c轴方向上生长，并且包括平行于该表面的ab平面，以及除了 针状晶体组是无定形区域或非晶态和微晶体混合的区域。 因此，可以形成具有良好电特性的高可靠性半导体器件。

公开(公告)号：US20100127261A1

公开(公告)日：2010-05-27

申请号：US12467005

申请日：2009-05-15

申请人： Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Takuya HIROHASHI

发明人： Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Takuya HIROHASHI

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： The thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode, an amorphous semiconductor layer over the gate insulating layer, a semiconductor layer including an impurity element imparting one conductivity type over the amorphous semiconductor layer. The amorphous semiconductor layer comprises an NH radical. Defects of the amorphous semiconductor layer are reduced by cross-linking dangling bonds with the NH radical in the amorphous semiconductor layer.

摘要翻译： 薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅极绝缘层，栅极绝缘层上的非晶半导体层，包括在非晶半导体层上赋予一种导电类型的杂质元素的半导体层。 非晶半导体层包含NH自由基。 通过与非晶半导体层中的NH自由基交联悬挂键来减少非晶半导体层的缺陷。

公开(公告)号：US20100123130A1

公开(公告)日：2010-05-20

申请号：US12618944

申请日：2009-11-16

申请人： Kengo AKIMOTO ,  Junichiro SAKATA ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA

发明人： Kengo AKIMOTO ,  Junichiro SAKATA ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA

IPC分类号： H01L29/12 ,  H01L21/04

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

摘要： It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

摘要翻译： 本发明的目的是提供一种适用于半导体器件的氧化物半导体。 或者，另一目的是提供一种使用氧化物半导体的半导体器件。 提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。 在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

公开(公告)号：US20100025676A1

公开(公告)日：2010-02-04

申请号：US12511252

申请日：2009-07-29

申请人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

发明人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78618

摘要： To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.

摘要翻译： 提供一种包括具有优异特性和高可靠性的薄膜晶体管的半导体器件以及不改变半导体器件的制造方法。 总结在于包括反向交错（底栅结构）薄膜晶体管，其中包含In，Ga和Zn的氧化物半导体膜用于半导体层，并且在半导体层和源之间提供缓冲层， 漏电极层。 通过有意地提供包含In，Ga和Zn的缓冲层并且具有比半导体层和源极和漏极电极层之间的半导体层更高的载流子浓度来形成欧姆接触。

公开(公告)号：US20120273780A1

公开(公告)日：2012-11-01

申请号：US13547377

申请日：2012-07-12

申请人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

发明人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC分类号： H01L29/12

CPC分类号： H01L29/78618 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2201/123 ,  G09G3/3674 ,  G09G2310/0286 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

摘要翻译： 一个实施例是包括反向交错（底栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 电极层。 有意地在源极和漏极电极层与半导体层之间提供具有比半导体层高的载流子浓度的缓冲层，从而形成欧姆接触。

公开(公告)号：US20120256179A1

公开(公告)日：2012-10-11

申请号：US13528009

申请日：2012-06-20

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

摘要翻译： 提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。 晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。 使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。 有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。 通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。 此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

公开(公告)号：US20120138922A1

公开(公告)日：2012-06-07

申请号：US13307398

申请日：2011-11-30

申请人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

发明人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC分类号： H01L29/12

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

摘要翻译： 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US20110220011A1

公开(公告)日：2011-09-15

申请号：US13042691

申请日：2011-03-08

申请人： Akiharu MIYANAGA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

发明人： Akiharu MIYANAGA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

IPC分类号： C30B1/02

CPC分类号： C30B1/04 ,  C30B29/16

摘要： A method of growing a single crystal of gallium oxide at a lower temperature than the melting point (1900° C.) of gallium oxide is provided. A compound film (hereinafter referred to as “gallium oxide compound film”) containing Ga atoms, O atoms, and atoms or molecules that easily sublimate, is heated to sublimate the atoms or molecules that easily sublimate from inside the gallium oxide compound film, thereby growing a single crystal of gallium oxide with a heat energy that is lower than a binding energy of gallium oxide.

摘要翻译： 提供了在比氧化镓的熔点（1900℃）低的温度下生长氧化镓单晶的方法。 含有Ga原子，O原子，容易升华的原子或分子的化合物膜（以下称为“氧化镓化合物膜”）被加热，使从氧化镓化合物膜内部容易升华的原子或分子升华，由此 以比氧化镓的结合能低的热能生长单晶的氧化镓。

公开(公告)号：US20110121289A1

公开(公告)日：2011-05-26

申请号：US12950186

申请日：2010-11-19

申请人： Akiharu MIYANAGA ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Shunpei YAMAZAKI

发明人： Akiharu MIYANAGA ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/10 ,  H01L29/41733

摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

摘要翻译： 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。