公开(公告)号：US5009241A

公开(公告)日：1991-04-23

申请号：US529741

申请日：1990-05-22

申请人： Hideyuki Nishizawa

发明人： Hideyuki Nishizawa

IPC分类号： B08B11/00 ,  B01L99/00 ,  B08B9/093

CPC分类号： B08B9/093 ,  B01L99/00

摘要： A narrow neck bottle is washed and rinsed by a method comprising the steps of supporting the bottle in an upside down position, injecting water containing air bubbles, into the bottle through a tube extending through the narrow neck of the bottle, accumulating air released from the poured water in an upper space in the bottle and expelling air and water remaining in the bottle by the accumulated air. Apparatus for carrying out this method comprises an aspirator installed such that its discharge pipe is directed upwardly, and connected to the discharge pipe, and a support for supporting the narrow neck bottle such that when supported by the support, the narrow neck of the bottle engages against the tube and that a gap is formed between the inner bottom surface of the bottle and the free end of the tube.

摘要翻译： 通过包括以下步骤的方法对狭窄的颈瓶进行洗涤和冲洗，所述方法包括以下步骤：将瓶子倒置位置，通过延伸穿过瓶颈的窄颈部的管将含有气泡的水注入瓶中， 将水倒入瓶子的上部空间，并通过累积的空气排出残留在瓶子中的空气和水。 用于执行该方法的装置包括一个吸气器，其安装成使得其排出管向上指向并连接到排出管，以及用于支撑窄颈瓶的支撑件，使得当由支撑件支撑时，瓶的窄颈部接合 并且在瓶的内底表面和管的自由端之间形成间隙。

公开(公告)号：US4814057A

公开(公告)日：1989-03-21

申请号：US143546

申请日：1988-01-13

申请人： Hideyuki Nishizawa

发明人： Hideyuki Nishizawa

IPC分类号： B01D57/02 ,  B01D63/00 ,  G01N27/447 ,  G01N27/26

CPC分类号： G01N27/44704 ,  G01N27/44708

摘要： An open top electrode tank including two electrode chambers respectively containing an electrolyte and an electrode, and an open top cooling tank containing cooling fluid are superposed one upon the other. A separating zone is attached to the bottom of the cooling tank, and bent portions of a pair of bridging filter papers are attached to predetermined positions of a separating zone. Permanent magnets are disposed on both sides of each filter paper and on the bottom of the cooling tank for attracting each other.

摘要翻译： 包括分别含有电解质和电极的两个电极室和容纳冷却流体的敞开顶部冷却槽的开放顶部电极槽彼此重叠。 分离区连接到冷却箱的底部，一对桥接滤纸的弯曲部分附接到分离区的预定位置。 永久磁铁设置在每个滤纸的两侧和冷却箱的底部，用于彼此吸引。

公开(公告)号：US20130234089A1

公开(公告)日：2013-09-12

申请号：US13602673

申请日：2012-09-04

申请人： Tsukasa TADA ,  Hideyuki Nishizawa

发明人： Tsukasa TADA ,  Hideyuki Nishizawa

IPC分类号： H01L45/00

CPC分类号： H01L45/14 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/53 ,  G11C2213/77 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0056 ,  H01L51/0068 ,  H01L51/0073 ,  H01L51/0098 ,  H01L51/0591

摘要： An organic molecular memory of an embodiment includes: a first conductive layer; a second conductive layer; and an organic molecular layer that is provided between the first conductive layer and the second conductive layer, and contains an organic molecule selected from a group of molecules that simultaneously satisfy the following conditions (I) and (II) in a molecular system having a molecular frame with a π-electron system spreading along the molecular axis: (I) one of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) is delocalized along the molecular axis, and the other one is localized with respect to the molecular axis; and (II) the value of the energy level of the highest occupied molecular orbital (HOMO) is −5.75 eV or higher.

摘要翻译： 实施方案的有机分子存储器包括：第一导电层; 第二导电层; 以及设置在所述第一导电层和所述第二导电层之间的有机分子层，并且含有选自同分子满足以下条件（I）和（II）的分子群的有机分子，所述分子体系具有分子 具有沿着分子轴扩展的π-电子系统的框架：（I）最高占据分子轨道（HOMO）和最低未占分子轨道（LUMO）之一沿着分子轴离域，另一个相对于 到分子轴; 和（II）最高占据分子轨道（HOMO）的能级的值为-5.75eV或更高。

公开(公告)号：US20120228694A1

公开(公告)日：2012-09-13

申请号：US13215626

申请日：2011-08-23

申请人： Tatsuo SHIMIZU ,  Satoshi Itoh ,  Hideyuki Nishizawa

发明人： Tatsuo SHIMIZU ,  Satoshi Itoh ,  Hideyuki Nishizawa

IPC分类号： H01L27/115 ,  H01L21/28 ,  H01L29/792

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/66439 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to an embodiment, includes a dielectric film and an Si semiconductor part. The dielectric film is formed by using one of oxide, nitride and oxynitride. The Si semiconductor part is arranged below the dielectric film, having at least one element of sulfur (S), selenium (Se), and tellurium (Te) present in an interface with the dielectric film, and formed by using silicon (Si).

摘要翻译： 根据实施例的半导体器件包括电介质膜和Si半导体部件。 通过使用氧化物，氮化物和氧氮化物中的一种来形成电介质膜。 所述Si半导体部件配置在与所述电介质膜的界面中存在的至少一种硫（S），硒（Se）和碲（Te）的元素的电介质膜的下方，并且通过使用硅（Si）形成。

公开(公告)号：US20120112171A1

公开(公告)日：2012-05-10

申请号：US13234657

申请日：2011-09-16

申请人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

发明人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

IPC分类号： H01L51/54 ,  H01L51/40

CPC分类号： H01L29/513 ,  H01L21/02118 ,  H01L21/02227 ,  H01L21/28282 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L51/0591

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。 第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。 第一半导体层与第一电极膜的侧面相对。 第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。 第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。 设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。

公开(公告)号：US5355235A

公开(公告)日：1994-10-11

申请号：US928704

申请日：1992-08-13

申请人： Hideyuki Nishizawa ,  Shuichi Uchikoga ,  Yoshihiko Nakano ,  Shuzi Hayase

发明人： Hideyuki Nishizawa ,  Shuichi Uchikoga ,  Yoshihiko Nakano ,  Shuzi Hayase

IPC分类号： H01L51/05 ,  G02F1/133 ,  H01L29/78 ,  H01L29/786 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L51/42 ,  H01L29/784

CPC分类号： H01L51/0545 ,  H01L51/0094 ,  H01L51/001 ,  H01L51/002 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0042 ,  H01L51/0078 ,  H01L51/0558 ,  H01L51/4226

摘要： There is disclosed an organic field effect element having an large ON/OFF current ratio. The organic field effect element includes a source electrode and a drain electrode formed separately to each other, a first organic layer constituting a channel between the source and drain electrodes, a second organic layer formed to be adjacent to the channel and having a carrier concentration different from that of the first organic layer, and a gate electrode formed to be opposite to the channel through the second organic layer. Carriers are transferred between the second and first organic layers in response to a voltage applied to the gate electrode to change an electrical conductivity of the channel.

摘要翻译： 公开了具有大的ON / OFF电流比的有机场效应元件。 有机场效应元件包括彼此分开形成的源极和漏电极，构成源极和漏极之间的沟道的第一有机层，形成为与沟道相邻并且具有不同载流子浓度的第二有机层 与第一有机层的栅极电极和形成为通过第二有机层的沟道相对的栅电极。 响应于施加到栅电极的电压，载流子在第二和第一有机层之间转移以改变沟道的电导率。

公开(公告)号：US09378962B2

公开(公告)日：2016-06-28

申请号：US13601539

申请日：2012-08-31

申请人： Shigeki Hattori ,  Masakazu Yamagiwa ,  Masaya Terai ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Yoshiaki Fukuzumi

发明人： Shigeki Hattori ,  Masakazu Yamagiwa ,  Masaya Terai ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Yoshiaki Fukuzumi

IPC分类号： G11C16/04 ,  H01L21/28 ,  B82Y10/00 ,  H01L29/423 ,  H01L29/788 ,  H01L27/115

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  G11C16/0416 ,  G11C16/0483 ,  H01L27/11556 ,  H01L29/42332 ,  H01L29/7881

摘要： A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.

摘要翻译： 非易失性半导体存储装置包括半导体层，形成在半导体层上的第一绝缘膜，形成在第一绝缘膜上并具有细金属颗粒的电荷存储层，形成在电荷存储层上的第二绝缘膜和栅极 电极形成在第二绝缘膜上。 在写入操作期间，在栅极电极和半导体层两端施加差分电压，以使栅极电极位于比半导体层低的电压下，并将正电荷存储在电荷存储层中。

公开(公告)号：US08633526B2

公开(公告)日：2014-01-21

申请号：US13234657

申请日：2011-09-16

申请人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

发明人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

IPC分类号： H01L27/108

CPC分类号： H01L29/513 ,  H01L21/02118 ,  H01L21/02227 ,  H01L21/28282 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L51/0591

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。 第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。 第一半导体层与第一电极膜的侧面相对。 第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。 第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。 设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。

公开(公告)号：US20100236620A1

公开(公告)日：2010-09-23

申请号：US12706338

申请日：2010-02-16

申请人： Tsutomu NAKANISHI ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Kumi Masunaga ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

发明人： Tsutomu NAKANISHI ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Kumi Masunaga ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

IPC分类号： H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/1884 ,  H01L31/022433 ,  H01L31/075 ,  Y02E10/548

摘要： According to one aspect of the present invention, there is provided a thin film solar cell comprising a substrate, a photoelectric conversion layer formed on said substrate, said photoelectric conversion layer having a thickness of 1 μm or less, and said photoelectric conversion layer comprising a p-type semiconductor layer, an n-type semiconductor layer, and are i-type semiconductor layer placed between said p-type semiconductor layer and said n-type semiconductor layer, a light-incident side electrode layer formed on a light-incident surface of said photoelectric conversion layer and a counter electrode layer formed on the surface opposite to the light-incident surface. Said light-incident side electrode layer has plural openings bored though said layer, and the thickness thereof is in the range of 10 nm to 200 nm. Each of said openings occupies an area of 80 nm2 to 0.8 μm2. The opening ratio is in the range of 10% to 66%.

摘要翻译： 根据本发明的一个方面，提供了一种薄膜太阳能电池，其包括基板，形成在所述基板上的光电转换层，所述光电转换层的厚度为1μm以下，所述光电转换层包括 p型半导体层，n型半导体层，并且是位于所述p型半导体层和所述n型半导体层之间的i型半导体层，形成在光入射表面上的光入射侧电极层 的所述光电转换层和形成在与所述光入射表面相对的表面上的对电极层。 所述光入射侧电极层具有贯穿所述层的多个开口，其厚度在10nm至200nm的范围内。 每个所述开口占据80nm 2至0.8μm2的面积。 开口率在10％至66％的范围内。

公开(公告)号：US07732806B2

公开(公告)日：2010-06-08

申请号：US11441092

申请日：2006-05-26

申请人： Reiko Yoshimura ,  Hideyuki Nishizawa ,  Kenji Todori ,  Ko Yamada ,  Fumihiko Aiga ,  Tsukasa Tada

发明人： Reiko Yoshimura ,  Hideyuki Nishizawa ,  Kenji Todori ,  Ko Yamada ,  Fumihiko Aiga ,  Tsukasa Tada

IPC分类号： H01L31/00

CPC分类号： G02F1/0018 ,  B82Y10/00 ,  B82Y20/00 ,  G02F2001/01791 ,  G02F2202/13 ,  Y10S977/774 ,  Y10S977/778 ,  Y10S977/81 ,  Y10S977/932

摘要： A refractive index variable element has a structure including a solid matrix, and one or more types of quantum dots dispersed in the solid matrix and having discrete occupied and unoccupied electron energy levels. The quantum dots perform a function of generating a pair of positive and negative charges upon irradiation with light, a function of trapping a positive charge, and a function of trapping a negative charge. The quantum dots performing the function of trapping a negative charge are selected from the group consisting of a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so that an additional electron occupies an upper different shell orbital when receives an electron, a metal chelate complex, and metallocene and derivatives thereof.

摘要翻译： 折射率可变元件具有包括固体基质和分散在固体基质中的一种或多种类型的量子点并且具有离散的占据和未占据的电子能级的结构。 量子点执行在用光照射时产生一对正电荷和负电荷的功能，捕获正电荷的功能以及捕获负电荷的功能。 执行捕获负电荷的功能的量子点从由带负电的正电荷和带正电的原子的组合组成的组中选择，其中带正电的原子的最外面的电子壳完全充满电子，使得附加 当接收电子时，电子占据上部不同的壳轨道，金属螯合络合物，茂金属及其衍生物。