公开(公告)号：US20110192540A1

公开(公告)日：2011-08-11

申请号：US13032360

申请日：2011-02-22

申请人： Masakazu Higuma ,  Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura

发明人： Masakazu Higuma ,  Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura

IPC分类号： H01L21/3065 ,  C23C16/50

CPC分类号： H01L21/6831 ,  H01J37/32532 ,  H01J2237/2001

摘要： An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.

摘要翻译： 本发明的一个目的是通过控制施加在桌子的每个部分上的应力来抑制静电卡盘的损坏，包括导电材料即用于产生等离子体的电极，用于增强平面内的电介质层 等离子体工艺的均匀性和静电卡盘。 用于等离子体处理装置的工作台包括与高频电源连接并适于等离子体产生的导电构件，用于吸收存在于等离子体中的离子，或者用于两者; 设置在所述导电构件的顶面上的电介质层，具有相对于彼此不同厚度的中心部分和周边部分，并且适于提供在所述基板上的平面中的高频电场强度的均匀性， 被处理 和用于静电卡盘的电极膜，设置在电介质层中并适用于将电极静电夹持在电介质层的顶面上。 通过这样的结构，可以控制由于温度变化而施加在静电卡盘上的应力。

公开(公告)号：US20110048643A1

公开(公告)日：2011-03-03

申请号：US12941701

申请日：2010-11-08

申请人： Shosuke Endoh ,  Shinji Himori

发明人： Shosuke Endoh ,  Shinji Himori

IPC分类号： H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  Y10T279/23

摘要： A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.

摘要翻译： 等离子体处理装置和聚焦环能够在待处理的基板的整个表面上进行均匀的等离子体处理，从而提高等离子体处理的表面均匀性，与常规情况相比。 聚焦环设置在基座2上，该基座2用于在其上安装半导体晶片W，并且还用作下部电极，以围绕半导体晶片W的周围。聚焦环6包括薄板形状的环形构件 设置成围绕晶片W的周边保持间隙，并且安装在半导体晶片下方的下环体和薄板形状的环构件。

公开(公告)号：US07622017B2

公开(公告)日：2009-11-24

申请号：US10856797

申请日：2004-06-01

申请人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

发明人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

IPC分类号： C23C16/509 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6831 ,  H01J2237/2001 ,  H01L21/67069

摘要： A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.

摘要翻译： 一种处理装置，用于通过向安装在气密处理室中的电极施加高频功率以将其中引入的等离子体中的处理气体转换为对等待处理对象的表面进行处理，所述处理装置包括：热传递气体供给路径， 将待传送物体的温度控制在被处理体的微小空间和安装在电极上的保持单元之间的热转印气体，用于通过绝缘构件的内部吸引并保持待处理物体 设置在电极下方。 通过绝缘构件的内部的热传递气体供给路径的一部分相对于保持单元的保持面的法线方向形成Z字形或螺旋状。

公开(公告)号：US20090285998A1

公开(公告)日：2009-11-19

申请号：US12505940

申请日：2009-07-20

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： C23C16/513 ,  C23C14/24 ,  C23C16/04 ,  B05D1/32

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US07619870B2

公开(公告)日：2009-11-17

申请号：US11834994

申请日：2007-08-07

申请人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

发明人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

IPC分类号： H01T23/00

CPC分类号： H01L21/6833

摘要： An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.

摘要翻译： 静电吸盘装置包括：静电吸盘部，其包括基板和用于向静电吸附内部电极施加直流电压的电源端子; 以及固定在静电吸盘部的另一个主面上的金属基部。 这里，在面向静电卡盘部的金属基部的主面上形成有凹部，电介质板固定在凹部。 电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。 电介质板和凹部通过绝缘性粘合剂层粘合而彼此接合。 绝缘粘合剂接合层的介电常数小于介质板和基板中的任何一种的介电常数。

公开(公告)号：US20090221151A1

公开(公告)日：2009-09-03

申请号：US12379052

申请日：2009-02-11

申请人： Masanobu Honda ,  Shinji Himori

发明人： Masanobu Honda ,  Shinji Himori

IPC分类号： H01L21/465 ,  C23F1/08

CPC分类号： H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541

摘要： The present invention provides an upper electrode used in an etching apparatus and the etching apparatus including the upper electrode, both of which can properly reduce intensity of electric field of plasma around a central portion of a substrate to be processed, thus enhancing in-plane uniformity of a plasma process. In this apparatus, a recess, serving as a space for allowing a dielectric to be injected therein, is provided around a central portion of the upper electrode. A dielectric supply passage configured for supplying the dielectric into the space and a dielectric discharge passage configured for discharging the dielectric from the space are connected with the space, respectively. With such configuration, the dielectric can be controllably supplied into the recess, such that in-plane distribution of the intensity of the electric field can be uniformed, corresponding to in-plane distribution of the intensity of the electric field of the plasma generated under various process conditions, such as a kind of each wafer that will be etched, each processing gas that will be used, and the like.

摘要翻译： 本发明提供了一种用于蚀刻装置的上电极和包括上电极的蚀刻装置，两者都可以适当地降低待加工基板的中心部分附近的等离子体的电场强度，从而提高面内均匀性 的等离子体工艺。 在该装置中，在上部电极的中心部分的周围设置用作容纳电介质的空间的凹部。 电介质供给通路被配置为将电介质供应到空间中，并且介质排出通道被配置为用于从空间排出电介质。 通过这样的结构，电介质可以可控地供给到凹部中，使得电场强度的面内分布可以均匀化，对应于各种不同的等离子体产生的等离子体的电场强度的面内分布 工艺条件，例如将被蚀刻的每种晶片的种类，将被使用的每种处理气体等。

公开(公告)号：US20080041312A1

公开(公告)日：2008-02-21

申请号：US11889339

申请日：2007-08-10

申请人： Shoichiro Matsuyama ,  Shinji Himori ,  Atsushi Matsuura

发明人： Shoichiro Matsuyama ,  Shinji Himori ,  Atsushi Matsuura

IPC分类号： C23C16/458

CPC分类号： C23C16/4586 ,  H01J37/20 ,  H01J37/32091 ,  H01J37/32706 ,  H01J2237/2002 ,  H01L21/6833 ,  H01L21/68757

摘要： [Object]To provide a stage for plasma processing apparatus, the stage being capable of improving uniformity of electric field strength in a plasma so as to enhance an in-plane uniformity of a plasma process to a substrate, and to provide a plasma processing apparatus provided with this stage. [Means for Solving the Problem]A stage 3 for a plasma processing apparatus 2 comprises: a conductive member 31 connected to a radiofrequency power source, the conductive member serving as an electrode for generating a plasma and/or an electrode for drawing ions from a plasma; a dielectric layer 32 covering a central part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed wafer W) placed on the placing surface; and an electrostatic chuck 33 laminated on the dielectric layer 35, the electrostatic chuck having an electrode film embedded therein. The electrode film satisfies δ/z≧1,000 (z; a thickness of the electrode film 35, 6; a skin depth of the electrode film for the electrostatic chuck as to a radiofrequency power supplied from the radiofrequency power source).

摘要翻译： 为了提供等离子体处理装置的载物台，能够提高等离子体的电场强度的均匀性，从而提高等离子体处理对基板的面内均匀性，并且提供等离子体处理装置 提供这个阶段。 解决问题的手段等离子体处理装置2的阶段3包括：连接到射频电源的导电构件31，用作产生等离子体的电极的导电构件和/或用于从 等离子体; 覆盖导电部件的上表面的中心部分的电介质层32，用于使放置在放置面上的待处理晶片W的等离子体的射频电场均匀化; 以及层压在电介质层35上的静电卡盘33，其中嵌有电极膜的静电卡盘。 电极膜满足delta / z> = 1,000（z;电极膜35,6的厚度;静电卡盘的电极膜的表皮深度，从射频电源提供的射频电力）。

公开(公告)号：US07112926B2

公开(公告)日：2006-09-26

申请号：US10120526

申请日：2002-04-12

申请人： Shinji Himori ,  Mitsuhiro Yuasa ,  Kazuyoshi Watanabe ,  Jun'ichi Shimada

发明人： Shinji Himori ,  Mitsuhiro Yuasa ,  Kazuyoshi Watanabe ,  Jun'ichi Shimada

IPC分类号： H05H1/24

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32183 ,  H05H1/46

摘要： There are provided a matching unit capable of sufficiently matching the impedance of a high frequency load to a transmission path impedance without increasing its size and matching time even if a high frequency power of 70 MHz or higher is supplied thereto, and a plasma processing system using the same. A matching unit 41 comprises: a resonance rod 61 for transmitting a high frequency energy from a high frequency power supply 40 to a plasma producing electrode; a variable capacitor 62, connected to the resonance rod 61 and an electrode 21 in series, for adjusting the imaginary part of an impedance complex number; a housing 63 which is provided outside of the resonance rod 61 and which is grounded; a link coil 64 for exciting a high frequency energy to the resonance rod 61 and for adjusting the real part of the impedance complex number; and a controller 69 for controlling a driving part for the variable capacitor 62 and the link coil 64 so that a series resonance circuit is formed between the high frequency power supply 40 and the ground via plasma in a matching state.

摘要翻译： 提供了一种能够将高频负载的阻抗充分地匹配到传输路径阻抗而不增加其尺寸和匹配时间的匹配单元，即使提供70MHz或更高的高频功率，以及使用等离子体处理系统 一样。 匹配单元41包括：用于将高频能量从高频电源40传输到等离子体产生电极的共振杆61; 连接到共振杆61的可变电容器62和串联的电极21，用于调节阻抗复数的虚部; 壳体63，其设置在共振杆61的外部并接地; 用于激励共振杆61的高频能量并用于调整阻抗复数的实部的链路线圈64; 以及用于控制可变电容器62和链接线圈64的驱动部分的控制器69，使得在匹配状态下通过等离子体在高频电源40和接地之间形成串联谐振电路。

公开(公告)号：US20050276928A1

公开(公告)日：2005-12-15

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C14/00 ,  C23F4/00 ,  C25D17/10 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20050011456A1

公开(公告)日：2005-01-20

申请号：US10856797

申请日：2004-06-01

申请人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

发明人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

IPC分类号： C23C16/00 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/683

CPC分类号： H01L21/6831 ,  H01J2237/2001 ,  H01L21/67069

摘要： A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.

摘要翻译： 一种处理装置，用于通过向安装在气密处理室中的电极施加高频功率以将其中引入的等离子体中的处理气体转换为对等待处理对象的表面进行处理，所述处理装置包括：热传递气体供给路径， 将待传送物体的温度控制在被处理体的微小空间和安装在电极上的保持单元之间的热转印气体，用于通过绝缘构件的内部吸引并保持待处理物体 设置在电极下方。 通过绝缘构件的内部的热传递气体供给路径的一部分相对于保持单元的保持面的法线方向形成Z字形或螺旋状。