High density selective deposition of carbon nanotubes onto a substrate
    21.
    发明授权
    High density selective deposition of carbon nanotubes onto a substrate 有权
    碳纳米管在基片上的高密度选择性沉积

    公开(公告)号:US08394727B1

    公开(公告)日:2013-03-12

    申请号:US13588382

    申请日:2012-08-17

    摘要: Methods for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.

    摘要翻译: 通过使用具有与这种碳纳米管共价结合的有机化合物的官能化碳纳米管,将碳纳米管选择性地放置在基板表面上的方法。 有机化合物包括至少两个官能团,其中第一个能够与碳纳米管形成共价键,其中第二个能够选择性地键合金属氧化物。 这样的官能化碳纳米管与具有至少一部分含有金属氧化物的基材表面接触。 有机化合物的第二官能团选择性地键合到金属氧化物上,以便将官能化的碳纳米管选择性地置于包含金属氧化物的衬底表面的至少一部分上。

    VAPOR PHASE DEPOSITION PROCESSES FOR DOPING SILICON
    25.
    发明申请
    VAPOR PHASE DEPOSITION PROCESSES FOR DOPING SILICON 失效
    用于掺硅的蒸气相沉积工艺

    公开(公告)号:US20110124187A1

    公开(公告)日:2011-05-26

    申请号:US12625835

    申请日:2009-11-25

    IPC分类号: H01L21/22

    CPC分类号: H01L21/2254

    摘要: A process of doping a silicon layer with dopant atoms generally includes reacting a vapor of a dopant precursor with oxide and/or hydroxide reactive sites present on the silicon layer to form a self assembled monolayer of dopant precursor; hydrolyzing the self assembled monolayer of the dopant precursor with water vapor to form pendant hydroxyl groups on the dopant precursor; capping the self assembled monolayer with an oxide layer; and annealing the silicon layer at a temperature effective to diffuse dopant atoms from the dopant precursor into the silicon layer. Additional monolayers can be formed in a similar manner, thereby providing controlled layer-by-layer vapor phase deposition of the dopant precursor compounds for controlled doping of silicon.

    摘要翻译: 用掺杂剂原子掺杂硅层的方法通常包括使掺杂剂前体的蒸气与存在于硅层上的氧化物和/或氢氧化物反应性位点反应以形成掺杂剂前体的自组装单层; 用水蒸汽水解掺杂剂前体的自组装单层以在掺杂剂前体上形成侧基羟基; 用氧化物层封闭自组装单层; 以及在有效地将掺杂剂原子从掺杂剂前体扩散到硅层中的温度下退火硅层。 可以以类似的方式形成另外的单层,由此提供受控的掺杂剂前体化合物的逐层气相沉积用于硅的受控掺杂。

    Selective placement of carbon nanotubes through functionalization
    30.
    发明申请
    Selective placement of carbon nanotubes through functionalization 有权
    通过功能化选择性地放置碳纳米管

    公开(公告)号:US20080102213A1

    公开(公告)日:2008-05-01

    申请号:US11324441

    申请日:2006-01-03

    IPC分类号: B05D3/04

    摘要: The present invention provides a method for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.

    摘要翻译: 本发明提供了一种通过使用具有共价键合到这种碳纳米管上的有机化合物的官能化碳纳米管来选择性地将碳纳米管置于基材表面上的方法。 有机化合物包括至少两个官能团,其中第一个能够与碳纳米管形成共价键,其中第二个能够选择性地键合金属氧化物。 这样的官能化碳纳米管与具有至少一部分含有金属氧化物的基材表面接触。 有机化合物的第二官能团选择性地键合到金属氧化物上,以便将官能化的碳纳米管选择性地置于包含金属氧化物的衬底表面的至少一部分上。