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216 条记录 (耗时 0.074 秒)

    Vapor phase deposition processes for doping silicon
    22.
    发明授权
    Vapor phase deposition processes for doping silicon 失效
    掺杂硅的气相沉积工艺

    公开(公告)号：US08691675B2

    公开(公告)日：2014-04-08

    申请号：US12625835

    申请日：2009-11-25

    申请人： Ali Afzali-Ardakani ,  Damon B. Farmer ,  Lidija Sekaric

    发明人： Ali Afzali-Ardakani ,  Damon B. Farmer ,  Lidija Sekaric

    IPC分类号： H01L21/04

    CPC分类号： H01L21/2254

    摘要： A process of doping a silicon layer with dopant atoms generally includes reacting a vapor of a dopant precursor with oxide and/or hydroxide reactive sites present on the silicon layer to form a self assembled monolayer of dopant precursor; hydrolyzing the self assembled monolayer of the dopant precursor with water vapor to form pendant hydroxyl groups on the dopant precursor; capping the self assembled monolayer with an oxide layer; and annealing the silicon layer at a temperature effective to diffuse dopant atoms from the dopant precursor into the silicon layer. Additional monolayers can be formed in a similar manner, thereby providing controlled layer-by-layer vapor phase deposition of the dopant precursor compounds for controlled doping of silicon.

    摘要翻译： 用掺杂剂原子掺杂硅层的方法通常包括使掺杂剂前体的蒸气与存在于硅层上的氧化物和/或氢氧化物反应性位点反应以形成掺杂剂前体的自组装单层; 用水蒸汽水解掺杂剂前体的自组装单层以在掺杂剂前体上形成侧基羟基; 用氧化物层封闭自组装单层; 以及在有效地将掺杂剂原子从掺杂剂前体扩散到硅层中的温度下退火硅层。 可以以类似的方式形成另外的单层，由此提供受控的掺杂剂前体化合物的逐层气相沉积用于硅的受控掺杂。

    Patterned doping of semiconductor substrates using photosensitive monolayers
    26.
    发明授权
    Patterned doping of semiconductor substrates using photosensitive monolayers 失效

    公开(公告)号：US08513642B2

    公开(公告)日：2013-08-20

    申请号：US13541857

    申请日：2012-07-05

    申请人： Ali Afzali-Ardakani ,  Devendra K. Sadana ,  Lidija Sekaric

    发明人： Ali Afzali-Ardakani ,  Devendra K. Sadana ,  Lidija Sekaric

    IPC分类号： H01L29/06

    CPC分类号： H01L21/228 ,  H01L21/22 ,  H01L29/06

    摘要： A semiconductor device and a method of fabricating a semiconductor device are disclosed. Embodiments of the invention use a photosensitive self-assembled monolayer to pattern the surface of a substrate into hydrophilic and hydrophobic regions, and an aqueous (or alcohol) solution of a dopant compound is deposited on the substrate surface. The dopant compound only adheres on the hydrophilic regions. After deposition, the substrate is coated with a very thin layer of oxide to cap the compounds, and the substrate is annealed at high temperatures to diffuse the dopant atoms into the silicon and to activate the dopant. In one embodiment, the method comprises providing a semiconductor substrate including an oxide surface, patterning said surface into hydrophobic and hydrophilic regions, depositing a compound including a dopant on the substrate, wherein the dopant adheres to the hydrophilic region, and diffusing the dopant into the oxide surface of the substrate.

    Embedding a nanotube inside a nanopore for DNA translocation
    27.
    发明授权
    Embedding a nanotube inside a nanopore for DNA translocation 有权
    在纳米孔内嵌入纳米管用于DNA易位

    公开(公告)号：US08491769B2

    公开(公告)日：2013-07-23

    申请号：US13611701

    申请日：2012-09-12

    申请人： Ali Afzali-Ardakani ,  Binquan Luan ,  Hongbo Peng

    发明人： Ali Afzali-Ardakani ,  Binquan Luan ,  Hongbo Peng

    IPC分类号： G01N27/26 ,  B82Y40/00

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C12Q1/6869 ,  C25D3/665 ,  C25D5/028 ,  C25D13/04 ,  G01N33/48721

    摘要： A technique for embedding a nanotube in a nanopore is provided. A membrane separates a reservoir into a first reservoir part and a second reservoir part, and the nanopore is formed through the membrane for connecting the first and second reservoir parts. An ionic fluid fills the nanopore, the first reservoir part, and the second reservoir part. A first electrode is dipped in the first reservoir part, and a second electrode is dipped in the second reservoir part. Driving the nanotube into the nanopore causes an inner surface of the nanopore to form a covalent bond to an outer surface of the nanotube via an organic coating so that the inner surface of the nanotube will be the new nanopore with a super smooth surface for studying bio-molecules while they translocate through the nanotube.

    摘要翻译： 提供了一种在纳米孔中嵌入纳米管的技术。 膜将储存器分离成第一储存部分和第二储存部分，并且纳米孔通过膜形成，用于连接第一和第二储存部分。 离子流体填充纳米孔，第一储存部分和第二储存部分。 将第一电极浸入第一储存部分中，将第二电极浸入第二储存部分。 将纳米管驱动到纳米孔中导致纳米孔的内表面通过有机涂层与纳米管的外表面形成共价键，使得纳米管的内表面将成为具有超光滑表面的新纳米孔，用于研究生物 分子，同时它们转移通过纳米管。

    Graphene Nanomesh Based Charge Sensor
    29.
    发明申请
    Graphene Nanomesh Based Charge Sensor 有权
    石墨烯纳米粉末电荷传感器

    公开(公告)号：US20130143769A1

    公开(公告)日：2013-06-06

    申请号：US13310194

    申请日：2011-12-02

    申请人： Ali Afzali-Ardakani ,  Shu-jen Han ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Razvan Nistor ,  Hsinyu Tsai

    发明人： Ali Afzali-Ardakani ,  Shu-jen Han ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Razvan Nistor ,  Hsinyu Tsai

    IPC分类号： C40B40/04 ,  C40B50/14 ,  C40B40/00 ,  B82Y99/00

    CPC分类号： G01N33/531 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  G01N33/5308 ,  G01N33/54373 ,  G01N33/54393 ,  G01N33/551 ,  G01N2400/00 ,  H01L21/30

    摘要： A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.

    摘要翻译： 一种基于石墨烯纳米薄膜的电荷传感器和用于生产基于石墨烯纳米薄膜的电荷传感器的方法。 该方法包括以周期性方式在石墨烯中产生多个孔以产生具有多个孔的图案化阵列的石墨烯纳米粒子，钝化石墨烯纳米粒子的多个孔中的每一个的边缘以允许石墨烯纳米粒子的官能化，并使 石墨烯纳米粒子的多个孔的每个的钝化边缘具有促进靶分子的受体与多个孔中的一个或多个的边缘的化学结合的化学化合物，允许靶分子结合受体，导致 将转移到石墨烯纳米片上的电荷以产生用于靶分子的基于石墨烯纳米膜的电荷传感器。

    Spin-on formulation and method for stripping an ion implanted photoresist
    30.
    发明授权
    Spin-on formulation and method for stripping an ion implanted photoresist 有权
    用于剥离离子注入光刻胶的自旋配方和方法

    公开(公告)号：US08455420B2

    公开(公告)日：2013-06-04

    申请号：US13535466

    申请日：2012-06-28

    申请人： Ali Afzali-Ardakani ,  Mahmoud Khojasteh ,  Ronald W. Nunes ,  George G. Totir

    发明人： Ali Afzali-Ardakani ,  Mahmoud Khojasteh ,  Ronald W. Nunes ,  George G. Totir

    IPC分类号： G03F7/42

    CPC分类号： H01L21/311 ,  G03F7/40 ,  G03F7/423

    摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

    摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。