公开(公告)号：US20200370180A1

公开(公告)日：2020-11-26

申请号：US16876252

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Ashutosh Agarwal ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Kartik Shah ,  Yanjun Xia

IPC: C23C16/455 ,  H01J37/32

Abstract: Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an outer region; a first inlet in fluid communication with the center region of the gas volume, the inlet having an inside and an outside; and a mixer disposed on the inside of the inlet to increase gas flow temperature. Also provided are processing chamber apparatus and methods of depositing a film.

公开(公告)号：US10325799B2

公开(公告)日：2019-06-18

申请号：US14875392

申请日：2015-10-05

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Ganesh Balasubramanian ,  Lipyeow Yap ,  Jianhua Zhou ,  Thomas Nowak

IPC: B05C13/00 ,  H01L21/68 ,  C23C16/458 ,  H01J37/32 ,  H01L21/687 ,  H01L21/324 ,  H01L21/67

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

公开(公告)号：US08753449B2

公开(公告)日：2014-06-17

申请号：US13904468

申请日：2013-05-29

Applicant: Applied Materials, Inc.

Inventor： Mahendra Chhabra ,  Scott A. Hendrickson ,  Sanjeev Baluja ,  Tsutomu Kiyohara ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos

IPC: C25C1/00 ,  C23C16/44 ,  C23C14/00 ,  B05D3/06 ,  H01L21/67 ,  G02B1/00

CPC classification number: C23C16/4405 ,  B05D3/066 ,  C23C14/00 ,  C23C16/56 ,  G02B1/00 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76825

Abstract: Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a UV processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a UV curing processes in a UV processing chamber. The method includes stabilizing the UV processing chamber by flowing an oxygen gas and a purge gas into the UV processing chamber at a flow ratio of about 1:50000 to about 1:100. While flowing the oxygen-doped purge gas, the substrate is exposed to UV radiation to cure the deposited ultra low-k dielectric layer. The inventive oxygen-doped purge curing process provides an alternate pathway to build silicon-oxygen network of the ultra low-k dielectric material, thereby accelerating cross-linking efficiency without significantly affecting the film properties of the deposited ultra low-k dielectric material.

Abstract translation: 本发明的实施例提供了在UV处理室内固化超低k电介质膜的方法。 在一个实施例中，该方法包括在沉积室中的衬底上沉积超低k电介质层，以及在UV处理室中对沉积的超低k电介质层进行UV固化过程。 该方法包括通过以约1：50000至约1:100的流量比将氧气和净化气体流入UV处理室来稳定UV处理室。 在流过氧掺杂的净化气体的同时，衬底暴露于UV辐射以固化沉积的超低k电介质层。 本发明的氧掺杂清洗固化方法提供构建超低k电介质材料的硅 - 氧网络的替代途径，从而加速交联效率而不显着影响沉积的超低k电介质材料的膜性质。

公开(公告)号：US20250054804A1

公开(公告)日：2025-02-13

申请号：US18929955

申请日：2024-10-29

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Tejas Ulavi ,  Eric J. Hoffmann ,  Ashutosh Agarwal

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and methods for loading and unloading substrates from a spatial processing chamber are described. A support assembly has a rotatable center base and support arms extending therefrom. A support shaft is at the outer end of the support arms and a substrate support is on the support shaft. Primary lift pins are positioned within openings in the substrate support. Secondary lift pins are positioned within openings in the support arms and are aligned with the primary lift pins. An actuation plate within the processing volume causes, upon movement of the support assembly, the primary lift pins to elevate through contact with the secondary lift pins.

公开(公告)号：US12224195B2

公开(公告)日：2025-02-11

申请号：US17879074

申请日：2022-08-02

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Sanjeev Baluja

IPC: H01L21/68 ,  B25B11/00 ,  H01L21/683

Abstract: Processing chambers, substrate supports, centering wafers and methods of center calibrating wafer hand-off are described. A centering wafer comprises a disc-shaped body having a top surface and a bottom surface defining a thickness, a center, an outer edge having an outer peripheral face, a first arc-shaped slit and a second arc-shaped slit. Embodiments of the disclosure advantageously provide the ability to use the centering wafer to monitor and control backside pressure and thereby determine the center of a substrate support prior to processing the centering wafer. The centering wafer may be centered at a plurality of different angles by rotating the centering wafer.

公开(公告)号：US20250037978A1

公开(公告)日：2025-01-30

申请号：US18225454

申请日：2023-07-24

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Chaowei Wang ,  Kevin Griffin ,  Kenneth Brian Doering ,  Hanhong Chen ,  Joseph AuBuchon

IPC: H01J37/32 ,  H01L21/67

Abstract: Gas distribution assemblies for semiconductor devices are described. The gas distribution assemblies include a backplate, a faceplate, a counterbored hole, and at least one orifice. The at least one orifice includes, for example, at least one straight orifice, or at least two angled orifices. Some embodiments of the gas distribution assemblies provide for reduced plasma damage in a processing chamber. Some embodiments of the gas distribution assemblies provide for reduced jetting on a substrate in a processing chamber. Methods of reducing plasma damage in gas distribution assemblies are also described.

公开(公告)号：US20240371613A1

公开(公告)日：2024-11-07

申请号：US18654221

申请日：2024-05-03

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Janisht Golcha ,  Sanjeev Baluja ,  Srinivas Gandikota ,  Yixiong Yang

IPC: H01J37/32 ,  C23C16/455

Abstract: Semiconductor manufacturing processing chambers having an RF isolator between the support ring and the showerhead and/or an RF gasket between the showerhead and the gas funnel are described. A cap insert with a cap housing around the cap insert is on the gas funnel and an RF feed is in contact with the showerhead. A substrate support can be included and may have an RF return path directed through the substrate support.

公开(公告)号：US12060638B2

公开(公告)日：2024-08-13

申请号：US17120186

申请日：2020-12-13

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Ashutosh Agarwal

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4412 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/68764

Abstract: Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

公开(公告)号：USD1037778S1

公开(公告)日：2024-08-06

申请号：US29846787

申请日：2022-07-19

Applicant: Applied Materials, Inc.

Designer： Ashutosh Agarwal ,  Eric J. Hoffmann ,  Dhritiman Subha Kashyap ,  Kartik Shah ,  Amit Rajendra Sherekar ,  Sanjeev Baluja

Abstract: FIG. 1 is a top-front isometric view of our new design for a gas distribution plate;
FIG. 2 is a top-rear isometric view of the gas distribution plate of FIG. 1;
FIG. 3 is a front view of the gas distribution plate of FIG. 1;
FIG. 4 is a rear view of the gas distribution plate of FIG. 1;
FIG. 5 is a left side view of the gas distribution plate of FIG. 1;
FIG. 6 is a right side view of the gas distribution plate of FIG. 1;
FIG. 7 is a top view of the gas distribution plate of FIG. 1; and,
FIG. 8 is a bottom view of the gas distribution plate of FIG. 1.
The portions of the gas distribution plate shown in broken line form no part of the claimed design.

公开(公告)号：US12020957B2

公开(公告)日：2024-06-25

申请号：US17008588

申请日：2020-08-31

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Tejas Ulavi ,  Sanjeev Baluja

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/46 ,  F27D5/00 ,  H01L21/687 ,  H05B3/22

CPC classification number: H01L21/67103 ,  C23C16/45544 ,  C23C16/46 ,  F27D5/0037 ,  H01L21/68771 ,  H05B3/22

Abstract: A heater assembly having a top seal and a second seal configured to account for deviation in processing heights and motor runoff of a heater standoff. The top seal is positioned between a shield plate and a top plate and the bottom seal is positioned between a heater mounting base and the heater standoff.