PEDESTAL ASSEMBLY FOR A SUBSTRATE PROCESSING CHAMBER

    公开(公告)号:US20220076979A1

    公开(公告)日:2022-03-10

    申请号:US17016030

    申请日:2020-09-09

    Abstract: A pedestal assembly for a processing region and comprising first pins coupled to a substrate support, configured to mate with first terminals of an electrostatic chuck, and are configured to be coupled to a first power source. Each of the first pins comprises an interface element, and a compliance element supporting the interface element. Second pins are coupled to the substrate support, configured to mate with second terminals of the electrostatic chuck, and configured to couple to a second power source. Alignment elements are coupled to the substrate support and are configured to interface with centering elements of the electrostatic chuck. The flexible element is coupled to the substrate support, configured to interface with a passageway of the electrostatic chuck, and configured to be coupled to a gas source.

    APPARATUS, SYSTEM, AND METHOD FOR NON-CONTACT TEMPERATURE MONITORING OF SUBSTRATE SUPPORTS

    公开(公告)号:US20220028712A1

    公开(公告)日:2022-01-27

    申请号:US16939629

    申请日:2020-07-27

    Abstract: Embodiments of the present disclosure relate to apparatus, systems and methods for substrate processing. A detachable substrate support is disposed within a processing volume of a processing chamber and the substrate support includes a substrate interfacing surface and a back surface. The pedestal hub has a supporting surface removably coupled to the substrate support. A hub volume of the pedestal hub includes temperature measuring assembly disposed therein positioned to receive electromagnetic energy emitted from the back surface of the substrate support. The temperature measuring assembly measures an intensity of the electromagnetic energy entering the assembly and generates intensity signals. An apparent temperature of the substrate is determined based on the intensity signals.

    SEMICONDUCTOR PROCESS EQUIPMENT
    24.
    发明公开

    公开(公告)号:US20240153800A1

    公开(公告)日:2024-05-09

    申请号:US18141920

    申请日:2023-05-01

    CPC classification number: H01L21/67706 H01L21/67709 H01L21/6773

    Abstract: A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

    METHODS FOR ELECTROSTATIC CHUCK CERAMIC SURFACING

    公开(公告)号:US20230238267A1

    公开(公告)日:2023-07-27

    申请号:US17584503

    申请日:2022-01-26

    CPC classification number: H01L21/6833 H01L21/68757 H01L21/304

    Abstract: Methods and apparatus reduce chucking abnormalities for electrostatic chucks by ensuring proper planarizing of ceramic surfaces of the electrostatic chuck. In some embodiments, a method for planarizing an upper ceramic surface of an electrostatic chuck assembly may comprise placing the electrostatic chuck assembly in a first planarizing apparatus, altering an upper ceramic surface of the electrostatic chuck assembly, and halting the altering of the upper ceramic surface of the electrostatic chuck assembly when an Sa parameter is less than approximately 0.1 microns, an Sdr parameter is less than approximately 2.5 percent, an Sz parameter is less than approximately 10 microns for any given area of approximately 10 mm2 of the upper ceramic surface, or a pit-porosity depth parameter of greater than 1 micron is less than approximately 0.1 percent of area of the upper ceramic surface.

    APPARATUS FOR CONTROLLING LIFT PIN MOVEMENT

    公开(公告)号:US20220336258A1

    公开(公告)日:2022-10-20

    申请号:US17233213

    申请日:2021-04-16

    Abstract: Embodiments of the present disclosure generally relate to lift pins and to apparatus for controlling lift pin movement. In an embodiment, an apparatus for positioning a substrate in a chamber is provided. The apparatus includes a chamber component, a lift pin having a top surface for supporting the substrate and a lift pin shaft and a stopper. The apparatus further includes a compressible element positioned between the chamber component and the stopper, the compressible element further positioned around the lift pin shaft, the lift pin being moveable relative to a substrate transfer plane by movement of a substrate support in contact with the compressible element.

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