公开(公告)号：US11335690B2

公开(公告)日：2022-05-17

申请号：US17147001

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/10 ,  H01L21/02 ,  H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US11328928B2

公开(公告)日：2022-05-10

申请号：US16444856

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC: H01L21/225 ,  H01L21/30 ,  H01L21/02 ,  H01L21/67

Abstract: Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

公开(公告)号：US20220127721A1

公开(公告)日：2022-04-28

申请号：US17078474

申请日：2020-10-23

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Zhongxin Chen ,  Gu Jiteng ,  Eswaranand Venkatasubramanian ,  Loh Kian Ping ,  Abhijit Basu Mallick ,  John Sudijono

IPC: C23C16/27 ,  H01L21/02 ,  C23C16/54 ,  C23C16/455 ,  C23C16/511

Abstract: Methods of depositing a diamond layer are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which nanocrystalline diamond deposited on a substrate, wherein the processing methods result in a nanocrystalline diamond hard mask having high hardness.

公开(公告)号：US11232955B2

公开(公告)日：2022-01-25

申请号：US16831251

申请日：2020-03-26

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Susmit Singha Roy ,  Yingli Rao ,  Regina Freed ,  Uday Mitra

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/02 ,  H01L21/306

Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.

公开(公告)号：US20210404056A1

公开(公告)日：2021-12-30

申请号：US16913398

申请日：2020-06-26

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/02 ,  H01L21/768

Abstract: Methods for selectively forming a transition metal dichalcogenide (TMDC) film comprise exposing a substrate comprising a silicon oxide-based surface and a tungsten (W) segment to a sulfur source to selectively form the transition metal dichalcogenide film with the tungsten segment relative to the silicon oxide-based surface. Chemical vapor deposition (CVD) at a temperature in a range of 350° C. to 600° C. is used to form the TMDC film. CVD may be conducted by low pressure CVD (LPCVD) or atmospheric pressure CVD (APCVD). Methods of making devices incorporating the TMDC films are also provided.

公开(公告)号：US20210305041A1

公开(公告)日：2021-09-30

申请号：US17211452

申请日：2021-03-24

Applicant: Applied Materials, Inc.

Inventor： Bo Qi ,  Zeqing Shen ,  Abhijit Basu Mallick

IPC: H01L21/02

Abstract: Exemplary methods of semiconductor processing may include providing a boron-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. The methods may include thermally reacting the boron-containing precursor and the carbon-containing precursor at a temperature below about 650° C. The methods may include forming a boron-and-carbon-containing layer on the substrate.

公开(公告)号：US10950450B2

公开(公告)日：2021-03-16

申请号：US16836858

申请日：2020-03-31

Applicant: Applied Materials, Inc.

Inventor： Swaminathan Srinivasan ,  Abhijit Basu Mallick ,  Nicolas Breil

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/28 ,  C23C16/04 ,  C23C14/04

Abstract: Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

公开(公告)号：US10930503B2

公开(公告)日：2021-02-23

申请号：US16393375

申请日：2019-04-24

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/321 ,  H01L21/768 ,  H01L21/3105

Abstract: Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.

公开(公告)号：US20210050365A1

公开(公告)日：2021-02-18

申请号：US16643965

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Praburam Gopalraja ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L27/11582 ,  H01L27/11556

Abstract: Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars. The height of the pillars is reduced so that the top of the pillars are below the surface of the blanket film and the process is optionally repeated to form a structure of predetermined height. The pillars can be removed from the features after formation of the predetermined height structure to form high aspect ratio features.

公开(公告)号：US20210047733A1

公开(公告)日：2021-02-18

申请号：US16989167

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： Bo Qi ,  Huiyuan Wang ,  Yingli Rao ,  Abhijit Basu Mallick

IPC: C23C16/56 ,  C23C16/30 ,  C23C16/455 ,  H01L27/11551 ,  H01L27/11524 ,  H01L27/108

Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.