公开(公告)号：US20220130664A1

公开(公告)日：2022-04-28

申请号：US17081482

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Yong Wang ,  Andrea Leoncini ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: H01L21/02 ,  C23C16/455

Abstract: Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.

公开(公告)号：US20220130660A1

公开(公告)日：2022-04-28

申请号：US17081506

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Yong Wang ,  Doreen Wei Ying Yong

IPC: H01L21/02 ,  H01L21/67

Abstract: Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.

公开(公告)号：US20220130659A1

公开(公告)日：2022-04-28

申请号：US17081498

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Yong Wang ,  Andrea Leoncini ,  Doreen Wei Ying Yong ,  John Sudijono

IPC: H01L21/02

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.

公开(公告)号：US20240343748A1

公开(公告)日：2024-10-17

申请号：US18743333

申请日：2024-06-14

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan

IPC: C07F11/00 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

CPC classification number: C07F11/00 ,  C23C16/0209 ,  C23C16/0227 ,  C23C16/0254 ,  C23C16/45527 ,  C23C16/56

Abstract: Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20230382933A1

公开(公告)日：2023-11-30

申请号：US18232421

申请日：2023-08-10

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/02 ,  C23C16/18 ,  C23C16/56

CPC classification number: C07F11/005 ,  C23C16/45553 ,  C23C16/4408 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56 ,  C23C16/0227 ,  C23C16/0209

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20230142926A1

公开(公告)日：2023-05-11

申请号：US18096347

申请日：2023-01-12

Applicant: Applied Materials, Inc.

Inventor： Yong Wang ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: C23C16/02 ,  C23C16/04 ,  C23C22/82 ,  C23C16/56 ,  C23C22/77

CPC classification number: C23C16/0227 ,  C23C16/04 ,  C23C22/82 ,  C23C16/56 ,  C23C22/77

Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

公开(公告)号：US20230129073A1

公开(公告)日：2023-04-27

申请号：US18085006

申请日：2022-12-20

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong

IPC: C23C16/18 ,  C23C16/40 ,  C23C16/42 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455 ,  C07F11/00

Abstract: Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220406595A1

公开(公告)日：2022-12-22

申请号：US17355154

申请日：2021-06-22

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Doreen Wei Ying Yong ,  John Sudijono ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  Michael Haverty ,  Muthukumar Kaliappan ,  Yingqian Chen ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US11530477B2

公开(公告)日：2022-12-20

申请号：US17146890

申请日：2021-01-12

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong

IPC: C23C16/18 ,  C23C16/40 ,  C23C16/42 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455 ,  C07F11/00

Abstract: Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220356197A1

公开(公告)日：2022-11-10

申请号：US17236020

申请日：2021-04-21

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56 ,  C23C16/02 ,  C23C16/44

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.