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公开(公告)号:US10156785B2
公开(公告)日:2018-12-18
申请号:US15177226
申请日:2016-06-08
Applicant: Applied Materials Israel Ltd.
Inventor: Alon Litman , Nir Ben-David Dodzin , Albert Karabekov , Alex Goldenshtein
Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.
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公开(公告)号:US09847209B2
公开(公告)日:2017-12-19
申请号:US15207024
申请日:2016-07-11
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Benzion Sender , Alon Litman
IPC: H01J37/26
CPC classification number: H01J37/265 , H01J2237/15 , H01J2237/202 , H01J2237/20228 , H01J2237/28
Abstract: A system for scanning a plurality of regions of interest of a substrate using one or more charged particle beams, the system comprises: an irradiation module having charged particle optics; a stage for introducing a relative movement between the substrate and the charged particle optics; an imaging module for collecting electrons emanating from the substrate in response to a scanning of the regions of interest by the one or more charged particle beams; and wherein the charged particle optics is arranged to perform countermovements of the charged particle beam during the scanning of the regions of interest thereby countering relative movements introduced between the substrate and the charged particle optics during the scanning of the regions of interest.
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公开(公告)号:US20170213697A1
公开(公告)日:2017-07-27
申请号:US15005949
申请日:2016-01-25
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Alon Litman , Efim Vinnitsky
IPC: H01J37/285 , H01J37/20 , H01J37/28 , H01J37/244
CPC classification number: H01J37/244 , H01J37/20 , H01J37/28 , H01J37/285 , H01J2237/024 , H01J2237/2445 , H01J2237/2807
Abstract: A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position.
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公开(公告)号:US20160282714A1
公开(公告)日:2016-09-29
申请号:US15177226
申请日:2016-06-08
Applicant: Applied Materials Israel Ltd.
Inventor: Alon Litman , Nir Ben-David Dodzin , Albert Karabekov , Alex Goldenshtein
CPC classification number: G03F1/86 , G03F1/62 , G21K1/062 , H01J37/28 , H01J2237/164 , H01J2237/2002 , H01J2237/244 , H01J2237/2449 , H01J2237/2809 , H01J2237/2817
Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask
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公开(公告)号:US20150198648A1
公开(公告)日:2015-07-16
申请号:US14153982
申请日:2014-01-13
Applicant: APPLIED MATERIALS ISRAEL, LTD.
Inventor: Amir Shoham , Alon Litman
IPC: G01R31/02 , G01R31/305
CPC classification number: G01R31/305 , G01R31/2812 , G01R31/2853
Abstract: A system and a method for evaluating a conductor, the method may include: illuminating a first area of a conductor by a first electron beam thereby charging the first area; illuminating by a second electron beam a second area of the conductor; and wherein an aggregate size of the first and second areas is a fraction of an overall size of the conductor; detecting, by a detector, detected emitted electrons that were emitted substantially from the second area and generating detection signals indicative of the detected emitted electrons; and processing, by a processor, the detection signals to provide information about a conductivity of the conductor.
Abstract translation: 一种用于评估导体的系统和方法,所述方法可以包括:通过第一电子束照射导体的第一区域,从而对第一区域充电; 通过第二电子束照射导体的第二区域; 并且其中所述第一和第二区域的聚集体尺寸是所述导体的总体尺寸的一部分; 通过检测器检测基本上从第二区域发射的检测到的发射电子并产生指示检测到的发射电子的检测信号; 以及由处理器处理检测信号以提供关于导体的导电性的信息。
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公开(公告)号:US20240387140A1
公开(公告)日:2024-11-21
申请号:US18198194
申请日:2023-05-16
Applicant: Applied Materials Israel Ltd.
Inventor: Alon Litman , Ron Naftali
IPC: H01J37/147 , H01J37/244
Abstract: Multiple electron beam optics that includes a detection unit that comprises an array of sensors, and a cross talk reduction unit. For each sensor of multiple sensors of the array of sensors: (i) the sensor includes an aperture and a sensing region that is configured to sense relevant backscattered electrons, the relevant backscattered electrons are emitted from the sample as a result of an illumination of the sample with a primary electron beam that is associated with the sensor and passed through the aperture; and (ii) the crosstalk reduction unit is configured to at least partially prevent a detection, by the sensor, of cross talk backscattered electrons, the cross talk backscattered electrons are emitted from the sample as result of an illumination of the sample by one or more primary beams not associated with the sensor.
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公开(公告)号:US11366072B2
公开(公告)日:2022-06-21
申请号:US16866329
申请日:2020-05-04
Applicant: Applied Materials Israel Ltd.
Inventor: Jacob Levin , Alon Litman
IPC: H01J37/244 , G01N23/203
Abstract: A method and a system for detecting backscattered electrons in a multi-beam electron column.
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公开(公告)号:US20210335571A1
公开(公告)日:2021-10-28
申请号:US16859974
申请日:2020-04-27
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Ilya Blayvas , Gal Bruner , Yehuda Zur , Alexander Mairov , Ron Davidescu , Kfir Dotan , Alon Litman
IPC: H01J37/305 , G01N1/32
Abstract: A method of evaluating a region of a sample that includes alternating layers of different material. The method includes milling, with a focused ion beam, a portion of the sample that includes the alternating layers of different material; reducing the milling area; and repeating the milling and reducing steps multiple times during the delayering process until the process is complete.
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公开(公告)号:US10714305B2
公开(公告)日:2020-07-14
申请号:US16279538
申请日:2019-02-19
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Alon Litman , Efim Vinnitsky
IPC: H01J37/20 , H01J37/28 , H01J37/244 , H01J37/285
Abstract: A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position.
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公开(公告)号:US10541104B2
公开(公告)日:2020-01-21
申请号:US14795793
申请日:2015-07-09
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Uri Lev , Alon Litman , Zvi Nir , Arnon Mizrahy
IPC: H01J37/28 , H01J37/147
Abstract: A method and a charged particle beam system that includes charged particle beam optics and a movable stage; wherein the movable stage is configured to introduce a movement between the object and charged particle beam optics; wherein the movement is of a constant velocity and along a first direction; wherein the charged particle beam optics is configured to scan, by the charged particle beam, multiple areas of the object so that each point of the multiple areas is scanned multiple times; wherein the multiple areas partially overlap; wherein the scanning is executed by the charged particle beam optics; wherein the scanning comprises performing counter-movement deflections of the charged particle beam for at least partially compensating for the movement; and wherein each area of the multiple areas is scanned by following an area scan scheme that defines multiple scan lines that differ from each other.
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