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    PHOTORESIST AND PATTERNING PROCESS
    23.
    发明申请
    PHOTORESIST AND PATTERNING PROCESS 有权
    光电和绘图工艺

    公开(公告)号：US20110070542A1

    公开(公告)日：2011-03-24

    申请号：US12562761

    申请日：2009-09-18

    Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

    Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

    IPC: G03F7/20 ,  G03F7/004

    CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11

    Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer

    Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分

    Method for forming a lithography pattern
    24.
    发明授权
    Method for forming a lithography pattern 有权
    光刻图案的形成方法

    公开(公告)号：US07482280B2

    公开(公告)日：2009-01-27

    申请号：US11426233

    申请日：2006-06-23

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    IPC: H01L21/302 ,  G03F7/00

    CPC classification number: G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086

    Abstract: A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.

    Abstract translation: 光刻图案的方法包括在基底上形成第一材料层，第一材料层基本上不含硅，并且在第一材料层上方形成包括至少一个开口的图案化抗蚀剂层。 在图案化的抗蚀剂层上形成含有硅的第二材料层，并且使用第二材料层作为掩模在第一材料层中形成开口。

    Supercritical developing for a lithographic process
    25.
    发明授权
    Supercritical developing for a lithographic process 有权
    光刻工艺的超临界发展

    公开(公告)号：US07473517B2

    公开(公告)日：2009-01-06

    申请号：US11025538

    申请日：2004-12-29

    Applicant: Ching-Yu Chang ,  Burn Jeng Lin ,  Chi-Wen Liu

    Inventor： Ching-Yu Chang ,  Burn Jeng Lin ,  Chi-Wen Liu

    IPC: G03F7/30

    CPC classification number: G03F7/322

    Abstract: A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.

    Abstract translation: 在半导体衬底上产生抗蚀剂图像的方法包括：使用包括超临界二氧化碳和碱（例如四甲基氢氧化铵（TMAH））的第一流体在半导体衬底上曝光光致抗蚀剂层并显影曝光的光致抗蚀剂层。 此外，可以使用包括超临界二氧化碳和溶剂如甲醇，乙醇，异丙醇和二甲苯的第二流体来清洗显影的光致抗蚀剂。

    APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY
    26.
    发明申请
    APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY 审中-公开
    装置和方法

    公开(公告)号：US20080304025A1

    公开(公告)日：2008-12-11

    申请号：US11760365

    申请日：2007-06-08

    Applicant: Ching-Yu Chang ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Burn Jeng Lin

    IPC: G03B27/42

    CPC classification number: G03F7/70716 ,  G03F7/70341

    Abstract: An immersion lithography apparatus includes a lens assembly having an imaging lens, a wafer stage for securing a wafer beneath the lens assembly, a fluid module for providing a fluid into a space between the lens assembly and the wafer, and a plurality of extraction units positioned proximate to an edge of the wafer. The extraction units are configured to operate independently to remove a portion of the fluid provided into the space between the lens assembly and the wafer.

    Abstract translation: 浸没式光刻设备包括具有成像透镜的透镜组件，用于将晶片固定在透镜组件下方的晶片台，用于将流体提供到透镜组件和晶片之间的空间的流体模块以及定位在多个提取单元 靠近晶片的边缘。 提取单元被配置为独立地操作以去除设置在透镜组件和晶片之间的空间中的一部分流体。

    Multiple tools using a single data processing unit
    28.
    发明授权
    Multiple tools using a single data processing unit 有权
    使用单个数据处理单元的多种工具

    公开(公告)号：US08688254B2

    公开(公告)日：2014-04-01

    申请号：US11871360

    申请日：2007-10-12

    Applicant: Burn Jeng Lin

    Inventor： Burn Jeng Lin

    IPC: G06F19/00 ,  B05B5/025 ,  B05C5/00 ,  B05C9/08 ,  B05C11/00 ,  C23C14/30 ,  H05B7/00

    CPC classification number: G03F7/70991 ,  G03F7/70383 ,  G03F7/70508

    Abstract: A method and system for simultaneously processing multiple substrates through an imaging beam process is provided. The system includes a plurality of direct write substrate exposure modules configured to receive a writing instruction from a data processing unit. The system and method of the invention utilizes multiple exposure modules receiving writing instructions from a single common data processing unit.

    Abstract translation: 提供了一种通过成像束过程同时处理多个基板的方法和系统。 该系统包括被配置为从数据处理单元接收写入指令的多个直接写入基板曝光模块。 本发明的系统和方法利用从单个公共数据处理单元接收写入指令的多个曝光模块。

    ERROR DIFFUSION AND GRID SHIFT IN LITHOGRAPHY
    29.
    发明申请
    ERROR DIFFUSION AND GRID SHIFT IN LITHOGRAPHY 有权
    误差扩展和网格移位在LITHOGRAPHY

    公开(公告)号：US20130232455A1

    公开(公告)日：2013-09-05

    申请号：US13409765

    申请日：2012-03-01

    Applicant: Pei-Yi Liu ,  Shy-Jay Lin ,  Wen-Chuan Wang ,  Jaw-Jung Shin ,  Burn Jeng Lin

    Inventor： Pei-Yi Liu ,  Shy-Jay Lin ,  Wen-Chuan Wang ,  Jaw-Jung Shin ,  Burn Jeng Lin

    IPC: G06F17/50

    CPC classification number: G03F1/36

    Abstract: The present disclosure involves a method of data preparation in lithography processes. The method of data preparation includes providing an integrated circuit (IC) layout design in a graphic database system (GDS) grid, and converting the IC layout design GDS grid to a second exposure grid by applying an error diffusion and a grid shift technique to a sub-pixel exposure grid.

    Abstract translation: 本公开涉及在光刻工艺中的数据准备方法。 数据准备的方法包括在图形数据库系统（GDS）网格中提供集成电路（IC）布局设计，并且通过向第二曝光网格应用误差扩散和网格移位技术将IC布局设计GDS网格转换为第二曝光网格 子像素曝光网格。

    NON-DIRECTIONAL DITHERING METHODS
    30.
    发明申请
    NON-DIRECTIONAL DITHERING METHODS 有权
    非方向抖动方法

    公开(公告)号：US20130232453A1

    公开(公告)日：2013-09-05

    申请号：US13409653

    申请日：2012-03-01

    Applicant: Pei-Yi Liu ,  Shy-Jay Lin ,  Wen-Chuan Wang ,  Jaw-Jung Shin ,  Burn Jeng Lin

    Inventor： Pei-Yi Liu ,  Shy-Jay Lin ,  Wen-Chuan Wang ,  Jaw-Jung Shin ,  Burn Jeng Lin

    IPC: G06F17/50

    CPC classification number: G03F7/00 ,  G03F1/00 ,  G03F7/70433 ,  G06F17/5081 ,  G06F19/00 ,  G21K5/00

    Abstract: A method of data preparation in lithography processes is described. The method includes providing an integrated circuit (IC) layout design in a graphic database system (GDS) grid, converting the IC layout design GDS grid to a first exposure grid, applying a non-directional dither technique to the first exposure, coincident with applying dithering to the first expose grid, applying a grid shift to the first exposure grid to generate a grid-shifted exposure grid and applying a dither to the grid-shifted exposure grid, and adding the first exposure grid (after receiving dithering) to the grid-shifted exposure grid (after receiving dithering) to generate a second exposure grid.

    Abstract translation: 描述了光刻工艺中数据准备的方法。 该方法包括在图形数据库系统（GDS）网格中提供集成电路（IC）布局设计，将IC布局设计GDS网格转换为第一曝光网格，将非定向抖动技术应用于第一曝光，与应用 将第一曝光栅格抖动到第一曝光栅格，将栅格移位施加到第一曝光栅格以产生栅格移动的曝光栅格并向栅格曝光栅格施加抖动，并将第一曝光栅格（在接收抖动之后）添加到栅格 转换曝光网格（在接收到抖动之后）以产生第二曝光网格。

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