公开(公告)号：US20120161651A1

公开(公告)日：2012-06-28

申请号：US13336735

申请日：2011-12-23

申请人： Schang-Jing HON ,  Chao-Hsing Chen ,  Hsin-Mao Liu

发明人： Schang-Jing HON ,  Chao-Hsing Chen ,  Hsin-Mao Liu

IPC分类号： H05B37/02

CPC分类号： H05B33/0824 ,  H01L2924/0002 ,  H05B33/0815 ,  Y02B20/346 ,  H01L2924/00

摘要： This disclosure discloses a light-emitting device. The light-emitting device is capable of receiving a periodic voltage signal comprising a first voltage signal and a second voltage signal. The light-emitting device comprises: a first light-emitting unit; a second light-emitting unit; and a first switching unit comprising at least three switches for receiving the periodic voltage signal. The at least three switches are electrically connected with the first and second light-emitting units such that the first and second light-emitting units are connected in parallel with each other in the first voltage signal, and are connected in series with each other in the second voltage signal.

摘要翻译： 本公开公开了一种发光装置。 发光装置能够接收包括第一电压信号和第二电压信号的周期性电压信号。 所述发光装置包括：第一发光单元; 第二发光单元; 以及包括用于接收所述周期性电压信号的至少三个开关的第一开关单元。 至少三个开关与第一和第二发光单元电连接，使得第一和第二发光单元在第一电压信号中彼此并联连接，并且在第一和第二发光单元中彼此串联连接 第二电压信号。

公开(公告)号：US20120080697A1

公开(公告)日：2012-04-05

申请号：US13175698

申请日：2011-07-01

申请人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Han-Min Wu ,  Ye-Ming Hsu ,  Chien-Fu Huang ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chun

发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Han-Min Wu ,  Ye-Ming Hsu ,  Chien-Fu Huang ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chun

IPC分类号： H01L33/46 ,  H01L33/08

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.

摘要翻译： 发光元件包括支撑基板; 形成在所述支撑基板上的反射层; 形成在反射层上的透明层; 形成在透明层上的发光层叠层; 形成在所述透明层和所述反射层之间的蚀刻停止层; 以及形成在发光层叠层和透明层之间的多个接触部。

公开(公告)号：US5579962A

公开(公告)日：1996-12-03

申请号：US534617

申请日：1995-09-27

申请人： Chao-Hsing Chen

发明人： Chao-Hsing Chen

IPC分类号： B65D23/00 ,  B65D5/72

CPC分类号： B65D23/00

摘要： An improved decanter structure, which comprises a neck passage, an inner chamber and a partition plate; both sides of the partition plate are thicker than the rest part of the decanter; two symmetrical shoulder passages extend from both sides of the neck passage; the shoulder passages can limit the flow of a liquor upon decanting the liquor, i.e., to provide a buffer effect for controlling the decanting.

摘要翻译： 一种改进的滗析器结构，其包括颈部通道，内室和隔板; 隔板的两侧比滗水器的其余部分厚; 两个对称的肩部通道从颈部通道的两侧延伸; 在倾析液体时，肩部通道可以限制液体的流动，即提供用于控制倾析的缓冲效果。

公开(公告)号：US09455242B2

公开(公告)日：2016-09-27

申请号：US13226095

申请日：2011-09-06

申请人： Hsin-Ying Wang ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Chien-Kai Chung ,  Min-Hsun Hsieh ,  Chia-Liang Hsu ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Hsiang-Ling Chang

发明人： Hsin-Ying Wang ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Chien-Kai Chung ,  Min-Hsun Hsieh ,  Chia-Liang Hsu ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Hsiang-Ling Chang

IPC分类号： H01L31/042 ,  H01L33/00 ,  H01L25/075 ,  H01L31/18 ,  H01L23/00 ,  H01L33/44 ,  H01L33/62

CPC分类号： H01L25/0753 ,  H01L24/24 ,  H01L24/82 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/01029 ,  H01L2924/12041 ,  Y02E10/50 ,  H01L2924/00

摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.

摘要翻译： 半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

公开(公告)号：US09159881B2

公开(公告)日：2015-10-13

申请号：US13596528

申请日：2012-08-28

申请人： Jia-Kuen Wang ,  Chien-Fu Shen ,  Chao-Hsing Chen ,  Yu-Chen Yang ,  Hui-Chun Yeh ,  Yi-Wen Ku ,  Hung-Che Chen ,  Chih-Nan Lin

发明人： Jia-Kuen Wang ,  Chien-Fu Shen ,  Chao-Hsing Chen ,  Yu-Chen Yang ,  Hui-Chun Yeh ,  Yi-Wen Ku ,  Hung-Che Chen ,  Chih-Nan Lin

IPC分类号： H01L33/38 ,  H01L33/42 ,  H01L33/10 ,  H01L33/40 ,  H01L33/44

CPC分类号： H01L33/405 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44

摘要： Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.

摘要翻译： 公开了一种发光器件，包括：半导体叠层层; 半导体堆叠层上的反射层; 第一缓冲层，包括在反射层上包含金属元素和非金属元素的化合物; 第一电极; 以及设置在第一缓冲层和第一电极之间的电绝缘层。

公开(公告)号：US09142534B2

公开(公告)日：2015-09-22

申请号：US13148544

申请日：2009-10-13

申请人： Chao-Hsing Chen ,  Schang-Jing Hon ,  Alexander Chan Wang ,  Li-Tian Liang ,  Chin-Yung Fan ,  Chien-Kai Chung ,  Min-Hsun Hsieh

发明人： Chao-Hsing Chen ,  Schang-Jing Hon ,  Alexander Chan Wang ,  Li-Tian Liang ,  Chin-Yung Fan ,  Chien-Kai Chung ,  Min-Hsun Hsieh

IPC分类号： H01L27/15 ,  H01L27/02 ,  H01L25/065 ,  H01L25/075 ,  H01L27/32 ,  H01L33/62

CPC分类号： H01L27/15 ,  H01L25/0753 ,  H01L27/153 ,  H01L27/156 ,  H01L27/3211 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/8592 ,  H01L2924/12032 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device is provided that is capable of being directly connected to an alternative current source, including at least one electronic element; at least one light-emitting diode array chip; at least one bonding pad, a conductive trace, and a submount for supporting the electronic element, the light-emitting diode array chip, the bonding pad, and the conductive trace. The conductive trace is electrically connected to the electronic element, the light-emitting diode array chip, and bonding pad.

摘要翻译： 提供了能够直接连接到包括至少一个电子元件的替代电流源的发光器件; 至少一个发光二极管阵列芯片; 至少一个接合焊盘，导电迹线和用于支撑电子元件的基座，发光二极管阵列芯片，接合焊盘和导电迹线。 导电迹线电连接到电子元件，发光二极管阵列芯片和接合焊盘。

公开(公告)号：US08598614B2

公开(公告)日：2013-12-03

申请号：US13221369

申请日：2011-08-30

申请人： Chao-Hsing Chen ,  Yu-Chen Yang ,  Li-Ping Jou ,  Hui-Chun Yeh ,  Yi-Wen Ku

发明人： Chao-Hsing Chen ,  Yu-Chen Yang ,  Li-Ping Jou ,  Hui-Chun Yeh ,  Yi-Wen Ku

IPC分类号： H01L33/60

CPC分类号： H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

摘要： A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

公开(公告)号：USD681566S1

公开(公告)日：2013-05-07

申请号：US29423273

申请日：2012-05-30

申请人： Chao-Hsing Chen ,  Hui-chun Yeh ,  Chien-Fu Shen

设计人： Chao-Hsing Chen ,  Hui-chun Yeh ,  Chien-Fu Shen

公开(公告)号：US20120061694A1

公开(公告)日：2012-03-15

申请号：US13230988

申请日：2011-09-13

申请人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Schang-Jing Hon ,  Sheng-Jie Hsu ,  De-Shan Kuo ,  Hsin-Ying Wang ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Chien-Kai Chung

发明人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Schang-Jing Hon ,  Sheng-Jie Hsu ,  De-Shan Kuo ,  Hsin-Ying Wang ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC分类号： H01L33/08

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on the less steep sidewall.

摘要翻译： 本申请的实施例公开了一种发光结构，包括第一单元; 第二单位 形成在所述第一单元和所述第二单元之间的沟槽，并且具有比所述较不陡峭的侧壁更陡峭的侧壁和更陡峭的侧壁; 以及布置在不太陡峭的侧壁上的电连接。

公开(公告)号：US20120055532A1

公开(公告)日：2012-03-08

申请号：US13226095

申请日：2011-09-06

申请人： Hsin-Ying Wang ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Chien-Kai Chung ,  Min-Hsun Hsieh ,  Chia-Liang Hsu ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Hsiang-Ling Chang

发明人： Hsin-Ying Wang ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Chien-Kai Chung ,  Min-Hsun Hsieh ,  Chia-Liang Hsu ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Hsiang-Ling Chang

IPC分类号： H01L31/0224 ,  H01L33/08 ,  H01L33/42

CPC分类号： H01L25/0753 ,  H01L24/24 ,  H01L24/82 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/01029 ,  H01L2924/12041 ,  Y02E10/50 ,  H01L2924/00

摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.

摘要翻译： 半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。