摘要:
A multilayer wiring board formed by laminating a plurality of dielectrics including a specific dielectric capable of embedding components therein is separated into first and second portions that are respectively made up of sets of dielectrics on opposite sides of the specific dielectric. A first aid unit stores design information about placement of objects to the first portion, and manages and displays the design information according to a user command to aid in design of the first portion. A second aid unit stores design information about placement of objects to the second portion, and manages and displays the design information according to a user command to aid in design of the second portion. Further, the first and second aid units each store design information about placement of boundary objects which extend to both the first and second portions, and cooperatively manage the design information and each display it.
摘要:
A semiconductor memory device including a flash memory and a RAM incorporating a pseudo-SRAM contained in an MCP, has an internal transfer control signal for controlling internal data transfer between the flash memory and pseudo-SRAM, and an external transfer control signal for controlling data transfer between an external CPU and pseudo-SRAM, as control signals for the pseudo-SRAM. A flash controller in the RAM controls the internal transfer control signal so as to suspend the internal data transfer between the flash memory and pseudo-SRAM when the external CPU requests access to the pseudo-SRAM during the internal data transfer.
摘要:
A device, method, and program too facilitate the design of flexible printed circuit boards is disclosed which generates, as a prohibited space, a position assumed to be occupied by a part on an opposing printed circuit board when the printed circuit board is bent from a bend position. Design preparation of a bendable flexible printed circuit board can be efficiently checked by checking for the presence/absence of interference between parts and prohibited spaces.
摘要:
A rotor conductor upper portion positioned near to an outer periphery of a rotor has a trapezoidal, cross sectional shape, a rotor conductor lower portion positioned nearer to a center of the rotor than the rotor conductor upper portion has a rectangular, cross sectional shape, and the rotor conductor upper portion has a height h1=27 mm or more in the case where rotor conductors are made of brass, and a height h1=7 mm or more in the case where the rotor conductors are made of copper.
摘要:
A circuit board is provided in which tamper resistance is improved by making probing by third parties difficult, while solving problems associated with the current techniques and manufacturing costs. A signal line through which a confidential signal requiring tamper resistance flows and components 32 and 33 connected to the signal line 21 by the terminals thereof, are laid out in a component-containing layer 13 of a circuit board 10. Only a confidential signal having been encrypted through a predetermined component 31 is outputted to an observation point 34 provided on a surface of the circuit board 10. External observation and control of the confidential signal is performed by decoding a cipher provided by the component 31 to the signal which appears at the observation point 34.
摘要:
An electronic blackboard device capable of performing color printing. Data read by an image sensor is converted to digital data by an A/D converter and provided via a shading correcting circuit and a converter to a printer control circuit, which causes a color printer to print the appropriate data in a color corresponding to a marker.
摘要:
In erasing, electrons are simultaneously injected into floating gates from sources of a plurality of memory cells. Thus, the threshold voltages of the plurality of memory cells are increased. In programming, electrons are emitted from a floating gate of a selected memory cell to a drain. Thus, the threshold voltage of the selected memory cell is reduced.
摘要:
A source line of a memory array included in a flash memory is set to a 3V potential by a source line circuit, a power supply voltage of 6V is applied to a sense amplifier, and 3V is applied as the ground potential. After the setting of such potential conditions, reading of the memory array is performed. When current flows to the memory cells as a result of reading, it means that the memory cell has been erased. If the current does not flows through the memory cell, erasure pulse is applied again and every memory cell is verified.
摘要:
A collective erasure type nonvolatile semiconductor memory device which allows use of redundant structure to word lines is provided. A row address buffer having address converting function simultaneously selects a plurality of physically adjacent word lines from a memory array in programming before erasure. Programming before erasure is effected on the memory cells on the simultaneously selected word lines. Even when physically adjacent word lines are short-circuited between each other, programming high voltage can be transmitted to the defective word lines, as these word lines are selected simultaneously. Therefore, the memory cells on the defective word lines can be programmed before erasure, so that over erasure at the time of collective erasing operation can be prevented. Thus, redundant structure for replacing defecting word lines by spare word lines can be utilized.
摘要:
A column latch and a high voltage switch connected to each bit line are eliminated, and an address counter and the data latch are newly provided. The data latch is arranged between an I/O buffer and a Y gate. In a programming cycle, the address counter is activated and transfer gates in the Y gate are successively selected. Consequently, a high voltage Vpp or 0V is applied periodically to bit lines in the memory cell array in accordance with the write data stored in the data latch.