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公开(公告)号：US06678125B2
公开(公告)日：2004-01-13
申请号：US10044513
申请日：2002-01-11
IPC分类号： G11B531
CPC分类号： H01F41/34 , G11B5/3113 , G11B5/313 , G11B5/3143 , G11B5/8404 , H01F41/32
摘要： A method for fabricating a soft ferromagnetic film structure with reduced edge stress anisotropy and enhanced magnetization switching speed. A soft ferromagnetic film structure is formed over an underlying structure. The soft ferromagnetic film structure has one or more edges exhibiting edge stress anisotropy. A non-ferromagnetic film structure is formed along the one or more edges to induce stress contributions therein that control the edge stress anisotropy.
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公开(公告)号：US09991490B2
公开(公告)日：2018-06-05
申请号：US14207808
申请日：2014-03-13
申请人： Murali Ramasubramanian , Michael Armstrong , Brian E. Brusca , Vladimir Dioumaev , Gunther A. Koblmiller , Ashok Lahiri , Laurie J. Lauchlan , Harrold J. Rust, III , Nirav S. Shah , Robert M. Spotnitz , James D. Wilcox
发明人： Murali Ramasubramanian , Michael Armstrong , Brian E. Brusca , Vladimir Dioumaev , Gunther A. Koblmiller , Ashok Lahiri , Laurie J. Lauchlan , Harrold J. Rust, III , Nirav S. Shah , Robert M. Spotnitz , James D. Wilcox
IPC分类号： H01M2/18 , H01M2/16 , H01M4/13 , H01M4/134 , H01M4/38 , H01M10/04 , H01M10/052 , H01M10/0585 , H01M2/14 , H01M4/02
CPC分类号： H01M2/166 , H01M2/145 , H01M2/1606 , H01M2/1673 , H01M4/13 , H01M4/134 , H01M4/386 , H01M10/0472 , H01M10/052 , H01M10/0585 , H01M2004/021
摘要： An electrode structure for use in an energy storage device, the electrode structure comprising a population of electrodes, a population of counter-electrodes and an electrically insulating material layer separating members of the electrode population from members of the counter-electrode population, each member of the electrode population having a longitudinal axis AE that is surrounded by the electrically insulating separator layer.
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公开(公告)号：US08841030B2
公开(公告)日：2014-09-23
申请号：US13357320
申请日：2012-01-24
申请人： Ashok Lahiri , Robert Spotnitz , Nirav Shah , Murali Ramasubramanian , Harrold J. Rust, III , James D. Wilcox , Michael J. Armstrong , Brian E. Brusca , Christopher G. Castledine , Laurie J. Lauchlan
发明人： Ashok Lahiri , Robert Spotnitz , Nirav Shah , Murali Ramasubramanian , Harrold J. Rust, III , James D. Wilcox , Michael J. Armstrong , Brian E. Brusca , Christopher G. Castledine , Laurie J. Lauchlan
CPC分类号： H01M4/134 , B82Y30/00 , H01G4/008 , H01G4/012 , H01G4/015 , H01G4/32 , H01M4/1395 , H01M4/38 , H01M4/386 , H01M4/70 , H01M4/80 , H01M10/0436 , H01M10/052 , H01M10/0525 , H01M10/054 , H01M10/0564 , H01M2004/021 , H01M2004/027 , H01M2220/30 , H01M2300/0017 , Y02E60/122
摘要： A structure for use in an energy storage device, the structure comprising a backbone system extending generally perpendicularly from a reference plane, and a population of microstructured anodically active material layers supported by the lateral surfaces of the backbones, each of the microstructured anodically active material layers having a void volume fraction of at least 0.1 and a thickness of at least 1 micrometer.
摘要翻译： 一种用于能量存储装置的结构，所述结构包括从参考平面大致垂直延伸的主体系统，以及由所述骨架的侧表面支撑的一组微结构的阳极活性材料层，所述微结构的阳极活性材料层 具有至少0.1的空隙体积分数和至少1微米的厚度。
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24.发明授权公开(公告)号：US08192788B1
公开(公告)日：2012-06-05
申请号：US12426084
申请日：2009-04-17
IPC分类号： B05D5/12
摘要： The present invention is directed to methods of forming current collectors of an energy storage device. The current collectors can be formed either before forming the anode/cathode, or after forming the anode/cathode. In one embodiment, a current collector material is simultaneously deposited on an anode support structure and a cathode support structure to form an anode current collector and a cathode current collector. In another embodiment, a current collector material is simultaneously deposited on an anode and a cathode to form an anode current collector and a cathode current collector.
摘要翻译： 本发明涉及形成储能装置的集电器的方法。 集电体可以在形成阳极/阴极之前或在形成阳极/阴极之后形成。 在一个实施例中，集电器材料同时沉积在阳极支撑结构和阴极支撑结构上，以形成阳极集电器和阴极集电器。 在另一个实施例中，集电器材料同时沉积在阳极和阴极上以形成阳极集电器和阴极集电器。
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25.发明授权Nonaqueous electrolyte secondary battery anode material with a uniform metal-semiconductor alloy layer 有权非水电解质二次电池负极材料具有均匀的金属 - 半导体合金层公开(公告)号：US08133613B2
公开(公告)日：2012-03-13
申请号：US12105090
申请日：2008-04-17
CPC分类号： H01B1/02 , H01M4/0452 , H01M4/36 , H01M4/366 , H01M4/38 , H01M4/386 , H01M10/0525 , H01M10/054 , Y10T29/49108
摘要： The present invention relates to nonaqueous electrolyte secondary batteries and durable anode materials and anodes for use in nonaqueous electrolyte secondary batteries. The present invention also relates to methods for producing these anode materials. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a displacement solution. The displacement solution contains ions of the metal to be deposited and a dissolution component for dissolving a part of the semiconductor in the anode material. When the anode material is contacted with the displacement solution, the dissolution component dissolves a part of the semiconductor in the anode material thereby providing electrons to reduce the metal ions and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer.
摘要翻译： 本发明涉及非水电解质二次电池和用于非水电解质二次电池的耐用阳极材料和阳极。 本发明还涉及这些阳极材料的制造方法。 在本发明中，通过将阳极材料的一部分与位移溶液接触，在阳极材料上形成金属 - 半导体合金层。 位移溶液包含待沉积的金属的离子和用于将半导体的一部分溶解在阳极材料中的溶解组分。 当阳极材料与位移溶液接触时，溶解组分溶解阳极材料中的半导体的一部分，从而提供电子以减少金属离子并将金属沉积在阳极材料上。 沉积后，阳极材料和金属被退火以形成均匀的金属 - 半导体合金层。
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公开(公告)号：US20090263716A1
公开(公告)日：2009-10-22
申请号：US12426069
申请日：2009-04-17
IPC分类号： H01M4/02 , H01L21/24 , H01L21/306
CPC分类号： H01M4/366 , H01M4/0404 , H01M4/0409 , H01M4/0457 , H01M4/134 , H01M4/36 , H01M4/362 , H01M4/38 , H01M4/386 , H01M10/052 , H01M10/0525 , H01M2004/025 , H01M2004/027 , H01M2220/20 , H01M2220/30 , Y02E60/122
摘要： The present invention relates to methods for producing anode materials for use in nonaqueous electrolyte secondary batteries. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a solution containing metals ions and a dissolution component. When the anode material is contacted with the solution, the dissolution component dissolves a part of the semiconductor material in the anode material and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer. The anode material of the present invention can be in a monolithic form or a particle form. When the anode material is in a particle form, the particulate anode material can be further shaped and sintered to agglomerate the particulate anode material.
摘要翻译： 本发明涉及非水电解质二次电池用阳极材料的制造方法。 在本发明中，通过使阳极材料的一部分与含有金属离子和溶解成分的溶液接触，在阳极材料上形成金属 - 半导体合金层。 当阳极材料与溶液接触时，溶解组分溶解阳极材料中半导体材料的一部分并将金属沉积在阳极材料上。 沉积后，阳极材料和金属被退火以形成均匀的金属 - 半导体合金层。 本发明的阳极材料可以是整体形式或颗粒形式。 当阳极材料为颗粒形式时，颗粒阳极材料可进一步成形并烧结以使颗粒状阳极材料聚结。
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27.发明授权公开(公告)号：US07340824B2
公开(公告)日：2008-03-11
申请号：US10883141
申请日：2004-06-30
CPC分类号： G11B5/127 , G11B5/3163 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G1 insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.
摘要翻译： 读头传感器的第一磁屏蔽层沉积在滑块基板表面上。 然后将图案化的光致抗蚀剂光刻地制造在具有开口的第一磁屏蔽层上，该开口沿着读取传感器将被制造的位置形成。 执行离子铣削步骤以在光致抗蚀剂层中的开口的位置处在磁屏蔽层的表面内产生凹坑。 然后去除光致抗蚀剂层，并且以大于凹穴深度的深度横跨磁屏蔽层的表面沉积填充层。 此后，进行抛光步骤以将填充层的部分向下移动到磁屏蔽层的表面。 沉积G 1绝缘层，然后在绝缘层上制造磁头传感器元件。
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28.发明授权公开(公告)号：US07075750B2
公开(公告)日：2006-07-11
申请号：US10652877
申请日：2003-08-29
申请人： Daniel Wayne Bedell , Quang Le , Edward Hin Pong Lee , Son Van Nguyen , Vladimir Nikitin , Murali Ramasubramanian
发明人： Daniel Wayne Bedell , Quang Le , Edward Hin Pong Lee , Son Van Nguyen , Vladimir Nikitin , Murali Ramasubramanian
IPC分类号： G11B5/147
CPC分类号： G11B5/127
摘要： An apparatus for patterning a self-aligned coil using a damascene process is disclosed. Coil pockets are formed in a first insulation layer disposed over a first pole layer. A barrier/seed layer is deposited along walls of the coil pockets in the insulation layer. Copper is formed in the coil pockets and over the insulation layer. The copper is planarized down to the insulation layer. The self-aligned coil process packs more copper into the same coil pocket and relaxes the coil alignment tolerance. Protrusions are prevented because of the more efficient and uniform spacing of the coil to reduce heat buildup in the head during a write.
摘要翻译： 公开了一种使用镶嵌工艺图案化自对准线圈的装置。 在设置在第一极层上的第一绝缘层中形成线圈腔。 隔离层/籽晶层沿绝缘层中的线圈袋的壁被沉积。 在线圈袋中形成铜，并在绝缘层上形成铜。 铜平坦化到绝缘层。 自对准线圈工艺将更多的铜包装到相同的线圈袋中，并松弛线圈对准公差。 由于在写入期间线圈的间隔更加有效和均匀以减少头部的积聚，所以防止了突起。
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29.发明授权Nonaqueous electrolyte secondary battery anode material with a uniform metal-semiconductor alloy layer 有权非水电解质二次电池负极材料具有均匀的金属 - 半导体合金层公开(公告)号：US08524395B2
公开(公告)日：2013-09-03
申请号：US13396958
申请日：2012-02-15
CPC分类号： H01B1/02 , H01M4/0452 , H01M4/36 , H01M4/366 , H01M4/38 , H01M4/386 , H01M10/0525 , H01M10/054 , Y10T29/49108
摘要： The present invention relates to nonaqueous electrolyte secondary batteries and durable anode materials and anodes for use in nonaqueous electrolyte secondary batteries. The present invention also relates to methods for producing these anode materials. In the present invention, a metal-semiconductor alloy layer is formed on an anode material by contacting a portion of the anode material with a displacement solution. The displacement solution contains ions of the metal to be deposited and a dissolution component for dissolving a part of the semiconductor in the anode material. When the anode material is contacted with the displacement solution, the dissolution component dissolves a part of the semiconductor in the anode material thereby providing electrons to reduce the metal ions and deposit the metal on the anode material. After deposition, the anode material and metal are annealed to form a uniform metal-semiconductor alloy layer.
摘要翻译： 本发明涉及非水电解质二次电池和用于非水电解质二次电池的耐用阳极材料和阳极。 本发明还涉及这些阳极材料的制造方法。 在本发明中，通过将阳极材料的一部分与位移溶液接触，在阳极材料上形成金属 - 半导体合金层。 位移溶液包含待沉积的金属的离子和用于将半导体的一部分溶解在阳极材料中的溶解组分。 当阳极材料与位移溶液接触时，溶解组分溶解阳极材料中的半导体的一部分，从而提供电子以减少金属离子并将金属沉积在阳极材料上。 沉积后，阳极材料和金属被退火以形成均匀的金属 - 半导体合金层。
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公开(公告)号：US20120115026A1
公开(公告)日：2012-05-10
申请号：US12426118
申请日：2009-04-17
CPC分类号： C23C18/54 , H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/661 , H01M10/0525
摘要： The present invention relates to a negative electrode structure for use in a non-aqueous electrolyte secondary battery and a method of making such negative electrode structure. The negative electrode structure comprises: a monolithic anode comprising a semiconductor material, and a uniform ion transport structure disposed at the monolithic anode surface for contacting a non-aqueous electrolyte, wherein the uniform ion transport structure serves as a current collector and the negative electrode structure does not contain another current collector. The present invention also relates to a battery comprising the negative electrode structure of the present invention, a cathode, and a non-aqueous electrolyte.
摘要翻译： 本发明涉及一种用于非水电解质二次电池的负极结构体及其制造方法。 负极结构包括：包含半导体材料的单片阳极和设置在整体式阳极表面处的用于接触非水电解质的均匀离子传输结构，其中均匀的离子传输结构用作集电器，负极结构 不包含另一个集电器。 本发明还涉及包含本发明的负极结构，阴极和非水电解质的电池。
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