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    Surface-Decorated Polymeric Amphiphile Porogens for the Templation of Nanoporous Materials
    24.
    发明申请
    Surface-Decorated Polymeric Amphiphile Porogens for the Templation of Nanoporous Materials 审中-公开
    用于模拟纳米多孔材料的表面装饰聚合物两亲物

    公开(公告)号：US20100273295A1

    公开(公告)日：2010-10-28

    申请号：US12770529

    申请日：2010-04-29

    申请人： James Lupton Hedrick ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller

    发明人： James Lupton Hedrick ,  Victor Yee-Way Lee ,  Teddie Peregrino Magbitang ,  Robert Dennis Miller

    IPC分类号： H01L21/50 ,  C08F265/04 ,  C08F12/08 ,  C04B38/00 ,  C08J9/26

    CPC分类号： C08G83/003

    摘要： A nanoparticle which includes a multi-armed core and surface decoration which is attached to the core is prepared. A multi-armed core is provided by any of a number of possible routes, exemplary preferred routes being living anionic polymerization that is initiated by a reactive, functionalized anionic initiator and ∈-caprolactone polymerization of a bis-MPA dendrimer. The multi-armed core is preferably functionalized on some or all arms. A coupling reaction is then employed to bond surface decoration to one or more arms of the multi-armed core. The surface decoration is a small molecule or oligomer with a degree of polymerization less than 50, a preferred decoration being a PEG oligomer with degree of polymerization between 2 and 24. The nanoparticles (particle size ≦10 nm) are employed as sacrificial templating porogens to form porous dielectrics. The porogens are mixed with matrix precursors (e.g., methyl silsesquioxane resin), the matrix vitrifies, and the porogens are removed via burnout. Greater porosity reduces the dielectric constant k of the resulting dielectrics. The porous dielectrics are incorporated into integrated circuits as lower k alternatives to silicon dioxide.

    摘要翻译： 制备了一种纳米颗粒，其包括附着在芯上的多核芯和表面装饰。 多臂核心由许多可能的途径中的任一种提供，典型的优选途径是活性阴离子聚合，其由反式官能化的阴离子引发剂和双-MPA树枝状聚合物的ε-己内酯聚合引发。 多臂核心优选在一些或所有臂上功能化。 然后使用偶联反应将表面装饰粘合到多臂芯的一个或多个臂上。 表面装饰是聚合度小于50的小分子或低聚物，优选的装饰是聚合度为2至24的PEG低聚物。使用纳米颗粒（粒度＆nlE; 10nm）作为牺牲模板致孔剂 以形成多孔电介质。 将致孔剂与基质前体（例如甲基倍半硅氧烷树脂）混合，基体玻璃化，并通过烧尽除去致孔剂。 更大的孔隙度降低了所得电介质的介电常数k。 将多孔电介质作为二氧化硅的较低k替代物并入集成电路中。