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46 条记录 (耗时 0.033 秒)

    Method of supplying slurry and a slurry supply apparatus having a mixing unit at a point of use
    21.
    发明授权
    Method of supplying slurry and a slurry supply apparatus having a mixing unit at a point of use 有权
    在使用点供给浆料的方法和具有混合单元的浆料供给装置

    公开(公告)号：US06910954B2

    公开(公告)日：2005-06-28

    申请号：US10145806

    申请日：2002-05-16

    申请人： Sue-Ryeon Kim ,  Seung-Un Kim ,  Seung-Ki Chae ,  Je-Gu Lee ,  Seung-Hoon Ahn

    发明人： Sue-Ryeon Kim ,  Seung-Un Kim ,  Seung-Ki Chae ,  Je-Gu Lee ,  Seung-Hoon Ahn

    IPC分类号： B01F3/12 ,  B01F15/00 ,  B24B37/00 ,  B24B57/02 ,  H01L21/304 ,  B24B1/00

    CPC分类号： B24B57/02 ,  B01F3/1221 ,  B01F3/1271 ,  B01F15/00123 ,  B01F2003/1285

    摘要： A computer-controlled slurry supplying apparatus for providing abrasive slurry to a chemical mechanical polishing (CMP) machine in a semiconductor manufacturing process preferably comprises a storage portion for accepting and storing a quantity of undiluted slurry, a mixing portion for accepting undiluted slurry from the storage portion and mixing with a diluting solution to created a diluted slurry, a supply portion for holding the diluted slurry, and at least one point-of-use mixing unit for mixing at least one chemical additive to the diluted slurry at or near a dispensing nozzle at the point of application. Each of the above portions of the slurry supplying apparatus further includes a re-circulation means for keep solutions in a mixed and agitated state. A method for using the slurry supplying apparatus comprises steps of controllably operating various valves, pumps, and sensors to maintain a desired slurry composition and flow rate.

    摘要翻译： 一种用于在半导体制造工艺中向化学机械抛光（CMP）机器提供磨料浆料的计算机控制的浆料供应装置优选地包括用于接收和存储一定数量的未稀释浆料的存储部分，用于从储存器接收未稀释浆料的混合部分 并与稀释溶液混合以产生稀释的浆料，用于保存稀释浆料的供应部分和至少一个使用点的混合单元，用于将至少一种化学添加剂与分配喷嘴处或附近的稀释浆料混合 在应用点。 浆料供给装置的上述各部分还包括用于将溶液保持在混合和搅拌状态的再循环装置。 使用浆料供给装置的方法包括可控地操作各种阀，泵和传感器以维持所需的浆料组成和流速的步骤。

    Endpoint detector for a substrate manufacturing process
    23.
    发明申请
    Endpoint detector for a substrate manufacturing process 审中-公开
    用于衬底制造工艺的端点检测器

    公开(公告)号：US20050127192A1

    公开(公告)日：2005-06-16

    申请号：US11010299

    申请日：2004-12-14

    申请人： Hyun-Kyu Kang ,  No-Hyun Huh ,  Yong-Jin Kim ,  Kiw-Sang Kim ,  Seung-Ki Chae

    发明人： Hyun-Kyu Kang ,  No-Hyun Huh ,  Yong-Jin Kim ,  Kiw-Sang Kim ,  Seung-Ki Chae

    IPC分类号： H01L21/3065 ,  G05D23/22 ,  H01L21/306 ,  G05D23/00 ,  F25B5/00 ,  F25B29/00 ,  F28F1/00

    CPC分类号： G05D23/22 ,  G05D23/1934

    摘要： An endpoint detector has a window, a first temperature control unit, a second temperature control unit and an analyzing unit. The window transmits light emitted from plasma in a processing chamber, and covers a passage through a sidewall of the processing chamber. The first temperature control unit maintains the window at a first temperature. The second temperature control unit maintains an inner surface of the passage at a second temperature, which is lower than the first temperature. The analyzing unit analyzes the light and determines an endpoint of a process in the processing chamber.

    摘要翻译： 端点检测器具有窗口，第一温度控制单元，第二温度控制单元和分析单元。 该窗口在处理室中透射从等离子体发射的光，并且覆盖通过处理室的侧壁的通道。 第一温度控制单元将窗口保持在第一温度。 第二温度控制单元在低于第一温度的第二温度下保持通道的内表面。 分析单元分析光并确定处理室中的过程的端点。

    Multi-chamber system
    24.
    发明申请
    Multi-chamber system 审中-公开
    多室系统

    公开(公告)号：US20050111936A1

    公开(公告)日：2005-05-26

    申请号：US10936651

    申请日：2004-09-09

    申请人： Ki-Sang Kim ,  Seung-Ki Chae ,  In-Ho Lee

    发明人： Ki-Sang Kim ,  Seung-Ki Chae ,  In-Ho Lee

    IPC分类号： H01L21/3065 ,  B65G1/00

    CPC分类号： H01L21/67745 ,  H01L21/67742

    摘要： A multi-chamber system includes an index station at which one or more substrate cassettes are placed, a transfer passageway having one end adjacent the index station, at least one process chamber disposed alongside the transfer passageway, and at least one substrate transfer robot disposed in the transfer passageway for receiving a substrate from the index station and by which the substrate is transferred to each process chamber. The multi-chamber system has a minimal footprint. Furthermore, the system can be easily expanded. In addition, the substrate transfer robot(s) may have a blade including two substrate supports so that the time required for moving a substrate through the system is minimized.

    摘要翻译： 一个多室系统包括一个索引站，一个或多个基板盒被放置在该索引站上，一个传送通道具有一个与索引站相邻的端部，至少一个处理室与传送通道一起设置，以及至少一个基板传送机器人设置在 所述传送通道用于从所述索引站接收基底，并且将所述基底转移到每个处理室。 多室系统占地面积最小。 此外，系统可以轻松扩展。 此外，基板传送机器人可以具有包括两个基板支撑件的叶片，使得将基板移动通过系统所需的时间被最小化。

    Robot arm mechanism
    28.
    发明申请
    Robot arm mechanism 审中-公开
    机器人手臂机构

    公开(公告)号：US20050217053A1

    公开(公告)日：2005-10-06

    申请号：US11015794

    申请日：2004-12-20

    申请人： Ki-Sang Kim ,  Seung-Ki Chae

    发明人： Ki-Sang Kim ,  Seung-Ki Chae

    IPC分类号： B25J9/06 ,  B25J9/00 ,  B25J9/04 ,  B25J9/10 ,  B25J17/02 ,  B60S1/02 ,  B65G49/07 ,  H01L21/677 ,  H01L21/68

    CPC分类号： H01L21/67742 ,  B25J9/0084 ,  B25J9/042 ,  B25J9/104 ,  H01L21/67745

    摘要： A robot arm mechanism includes a housing, upper and lower arms rotatably mounted on the housing, a respective substrate-supporting blade connected to each upper arm, and first, second, third and fourth driving units for rotating the housing, the upper and lower arms and the blade independently of one another. Thus, positions of the blades are readily controlled so that the blades and/or the substrates supported by the blades can be prevented from colliding against the inner wall of the chambers into and from which the substrates are transferred by the robot arm mechanism.

    摘要翻译： 一种机器人臂机构包括壳体，可旋转地安装在壳体上的上臂和下臂，连接到每个上臂的相应的基板支撑叶片，以及用于旋转壳体的第一，第二，第三和第四驱动单元，上臂和下臂 和叶片彼此独立。 因此，容易地控制叶片的位置，使得能够防止由叶片支撑的叶片和/或基板与机器人手臂机构进入和移出基板的室的内壁碰撞。

    Etching method
    30.
    发明授权
    Etching method 有权
    蚀刻方法

    公开(公告)号：US07497963B2

    公开(公告)日：2009-03-03

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： B44C1/22

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。