公开(公告)号：US4002151A

公开(公告)日：1977-01-11

申请号：US574935

申请日：1975-05-06

申请人： Eiji Toyoda ,  Masaaki Noguchi ,  Yukiyasu Tanaka ,  Tsuchio Bunda ,  Masaharu Sumiyoshi

发明人： Eiji Toyoda ,  Masaaki Noguchi ,  Yukiyasu Tanaka ,  Tsuchio Bunda ,  Masaharu Sumiyoshi

IPC分类号： F02B3/06 ,  F02B49/00 ,  F02M27/02 ,  F02B43/08

CPC分类号： F02B49/00 ,  F02M27/02 ,  F02B3/06

摘要： A diesel engine characterized in that a part of fuel is reformed into a mixture containing decomposition and oxidation products in a system separate from that of a fuel injection in which a fuel is injected into a compressed air introduced into the cylinders under a high pressure and ignited, and said mixture is introduced into said cylinders during the suction stroke of the engine, and the method for improving the combustion efficiency thereof.

摘要翻译： 一种柴油发动机，其特征在于，将一部分燃料重整成含有分解和氧化产物的混合物，所述混合物在与燃料喷射相分离的系统中分离，其中将燃料喷射到高压下引入气缸的压缩空气中并点燃 并且在发动机的吸入冲程期间将所述混合物引入所述气缸，以及用于提高其燃烧效率的方法。

公开(公告)号：US08938878B2

公开(公告)日：2015-01-27

申请号：US13225681

申请日：2011-09-06

申请人： Eiji Toyoda ,  Shigetomi Kido

发明人： Eiji Toyoda ,  Shigetomi Kido

IPC分类号： H05K3/30 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3121 ,  H01L24/75 ,  H01L2224/73203 ,  H01L2924/10253 ,  H01L2924/12042 ,  Y10T29/49124 ,  Y10T29/4913 ,  Y10T29/49146 ,  Y10T428/31504 ,  H01L2924/00

摘要： A method for manufacturing an electronic parts device allowing for easy overmolding and underfilling without requiring a jig for preventing leakage of the melted resin composition, and a resin composition sheet for electronic parts encapsulation used therein.

摘要翻译： 一种用于制造电子部件装置的方法，其允许容易地包覆成型和底部填充，而不需要用于防止熔融的树脂组合物泄漏的夹具，以及用于其中的电子部件密封用树脂组合物片。

公开(公告)号：US08476149B2

公开(公告)日：2013-07-02

申请号：US12512492

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

IPC分类号： H01L29/36

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

摘要翻译： 将通过切克劳斯基法生长的硅单晶锭制成的硅晶片在氧化气体气氛中在1300℃以上但小于1380℃的最高温度（T1）下进行快速加热/冷却热处理 氧分压为20％以上但小于100％。 根据本发明的硅晶片在至少包括硅晶片的器件有源区的无缺陷区（DZ层）中具有0.7×10 18原子/ cm 3的氧固溶体浓度的高氧浓度区域 以上，同时无缺陷区域含有过饱和状态的间隙硅。

公开(公告)号：US08304817B2

公开(公告)日：2012-11-06

申请号：US13064230

申请日：2011-03-11

申请人： Tsutomu Tezuka ,  Eiji Toyoda

发明人： Tsutomu Tezuka ,  Eiji Toyoda

IPC分类号： H01L29/04

CPC分类号： H01L29/7842 ,  H01L27/1203 ,  H01L27/1207 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785 ,  H01L29/78696

摘要： A method for manufacturing a field effect transistor, includes: forming a mask of an insulating film on a semiconductor layer containing Si formed on a semiconductor substrate; forming the semiconductor layer into a mesa structure by performing etching with the use of the mask, the mesa structure extending in a direction parallel to an upper face of the semiconductor substrate; narrowing a distance between two sidewalls of the mesa structure and flattening the sidewalls by performing a heat treatment in a hydrogen atmosphere, the two sidewalls extending in the direction and facing each other; forming a gate insulating film covering the mesa structure having the sidewalls flattened; forming a gate electrode covering the gate insulating film; and forming source and drain regions at portions of the mesa structure, the portions being located on two sides of the gate electrode.

摘要翻译： 一种场效应晶体管的制造方法，包括：在半导体衬底上形成的含有Si的半导体层上形成绝缘膜的掩模; 通过使用所述掩模进行蚀刻，将所述半导体层形成为台面结构，所述台面结构在与所述半导体基板的上表面平行的方向上延伸; 缩小台面结构的两个侧壁之间的距离，并通过在氢气氛中进行热处理使两侧壁平坦化，两个侧壁在该方向上相互延伸并面对彼此; 形成覆盖所述侧壁平坦化的所述台面结构的栅极绝缘膜; 形成覆盖所述栅极绝缘膜的栅电极; 以及在所述台面结构的部分处形成源极和漏极区域，所述部分位于所述栅电极的两侧。

公开(公告)号：US08269213B2

公开(公告)日：2012-09-18

申请号：US12600578

申请日：2008-05-14

申请人： Hiroshi Noro ,  Naohide Takamoto ,  Eiji Toyoda

发明人： Hiroshi Noro ,  Naohide Takamoto ,  Eiji Toyoda

IPC分类号： H01L23/29

CPC分类号： H01L23/293 ,  C08G59/621 ,  C08G59/688 ,  C08K5/55 ,  H01L2924/0002 ,  C08L63/00 ,  H01L2924/00

摘要： An epoxy resin composition for semiconductor encapsulation, which comprises: (A) an epoxy resin having at least two epoxy groups in a molecule thereof; (B) a compound having at least two phenolic hydroxyl groups in a molecule thereof; and (C) particles of a compound represented by general formula (1), the particles having a maximum particle diameter of not greater than 30 μm and a standard deviation of not greater than 5 μm, the particles being dispersed in the epoxy resin composition: wherein X1 to X5, which may be the same or different, are each a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or a fluorine atom. The epoxy resin composition is an encapsulation material excellent in pot life, fluidity and curability, and has a lower chloride ion content. The epoxy resin composition provides a highly reliable semiconductor device excellent in moisture resistant reliability.

摘要翻译： 一种用于半导体封装的环氧树脂组合物，其包含：（A）在其分子中具有至少两个环氧基的环氧树脂; （B）在其分子中具有至少两个酚羟基的化合物; 和（C）由通式（1）表示的化合物的颗粒，最大粒径不大于30μm，标准偏差不大于5μm的颗粒，分散在环氧树脂组合物中的颗粒： 其中X1〜X5可以相同或不同，分别为氢原子，碳原子数为1〜9的烷基或氟原子。 环氧树脂组合物是适用期，流动性和固化性优异的氯化物离子含量低的封装材料。 环氧树脂组合物提供了高可靠性的耐湿可靠性优异的半导体装置。

公开(公告)号：US20110165738A1

公开(公告)日：2011-07-07

申请号：US13064229

申请日：2011-03-11

申请人： Tsutomu Tezuka ,  Eiji Toyoda

发明人： Tsutomu Tezuka ,  Eiji Toyoda

IPC分类号： H01L21/336

CPC分类号： H01L29/7842 ,  H01L27/1203 ,  H01L27/1207 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785 ,  H01L29/78696

摘要： A method for manufacturing a field effect transistor, includes: forming a mask of an insulating film on a semiconductor layer containing Si formed on a semiconductor substrate; forming the semiconductor layer into a mesa structure by performing etching with the use of the mask, the mesa structure extending in a direction parallel to an upper face of the semiconductor substrate; narrowing a distance between two sidewalls of the mesa structure and flattening the sidewalls by performing a heat treatment in a hydrogen atmosphere, the two sidewalls extending in the direction and facing each other; forming a gate insulating film covering the mesa structure having the sidewalls flattened; forming a gate electrode covering the gate insulating film; and forming source and drain regions at portions of the mesa structure, the portions being located on two sides of the gate electrode.

摘要翻译： 一种场效应晶体管的制造方法，包括：在半导体衬底上形成的含有Si的半导体层上形成绝缘膜的掩模; 通过使用所述掩模进行蚀刻，将所述半导体层形成为台面结构，所述台面结构在与所述半导体基板的上表面平行的方向上延伸; 缩小台面结构的两个侧壁之间的距离，并通过在氢气氛中进行热处理使两侧壁平坦化，两个侧壁在该方向上相互延伸并面对彼此; 形成覆盖所述侧壁平坦化的所述台面结构的栅极绝缘膜; 形成覆盖所述栅极绝缘膜的栅电极; 以及在所述台面结构的部分处形成源极和漏极区域，所述部分位于所述栅电极的两侧。

公开(公告)号：US20100197146A1

公开(公告)日：2010-08-05

申请号：US12656232

申请日：2010-01-21

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/302

CPC分类号： C30B33/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/67109

摘要： In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.

摘要翻译： 在通过切片由切克劳斯基法制造的硅单晶锭进行切片而得到的晶片的热处理方法中，通过将保持时间设定为1200℃以上的最终温度，进行快速加热/冷却热处理， 在含有氧分压为1.0％以上且20％以下的氧和氩气的混合气体气氛中，硅的熔点以下等于或大于1秒且等于或小于60秒， 因此在硅晶片的表面上形成厚度为9.1nm以下或24.3nm以上的氧化膜。

公开(公告)号：US20100148379A1

公开(公告)日：2010-06-17

申请号：US12600578

申请日：2008-05-14

申请人： Hiroshi Noro ,  Naohide Takamoto ,  Eiji Toyoda

发明人： Hiroshi Noro ,  Naohide Takamoto ,  Eiji Toyoda

IPC分类号： H01L23/29 ,  C08L63/00

CPC分类号： H01L23/293 ,  C08G59/621 ,  C08G59/688 ,  C08K5/55 ,  H01L2924/0002 ,  C08L63/00 ,  H01L2924/00

摘要： An epoxy resin composition for semiconductor encapsulation, which comprises: (A) an epoxy resin having at least two epoxy groups in a molecule thereof; (B) a compound having at least two phenolic hydroxyl groups in a molecule thereof; and (C) particles of a compound represented by general formula (1), the particles having a maximum particle diameter of not greater than 30 μm and a standard deviation of not greater than 5 μm, the particles being dispersed in the epoxy resin composition: wherein X1 to X5, which may be the same or different, are each a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or a fluorine atom. The epoxy resin composition is an encapsulation material excellent in pot life, fluidity and curability, and has a lower chloride ion content. The epoxy resin composition provides a highly reliable semiconductor device excellent in moisture resistant reliability.

摘要翻译： 一种用于半导体封装的环氧树脂组合物，其包含：（A）在其分子中具有至少两个环氧基的环氧树脂; （B）在其分子中具有至少两个酚羟基的化合物; 和（C）由通式（1）表示的化合物的颗粒，最大粒径不大于30μm，标准偏差不大于5μm的颗粒，分散在环氧树脂组合物中的颗粒： 其中X1〜X5可以相同或不同，分别为氢原子，碳原子数为1〜9的烷基或氟原子。 环氧树脂组合物是适用期，流动性和固化性优异的氯化物离子含量低的封装材料。 环氧树脂组合物提供了高可靠性的耐湿可靠性优异的半导体装置。

公开(公告)号：US20080164572A1

公开(公告)日：2008-07-10

申请号：US11960061

申请日：2007-12-19

申请人： Eiji Toyoda ,  Takeshi Senda ,  Akiko Narita ,  Hiromichi Isogai ,  Koji Izunome

发明人： Eiji Toyoda ,  Takeshi Senda ,  Akiko Narita ,  Hiromichi Isogai ,  Koji Izunome

IPC分类号： H01L29/04 ,  H01L21/304 ,  H01L21/18

CPC分类号： H01L21/3247 ,  H01L21/76254 ,  H01L29/045 ,  H01L29/78

摘要： A semiconductor substrate whose surface roughness is reduced by optimizing an inclination (off angle) with respect to a {110} surface of the semiconductor substrate surface and a manufacturing method thereof are provided. The surface of the semiconductor substrate has the inclination (off angle) of 0 degree or more and 0.12 degrees or less, or 5 degrees or more and 11 degrees or less, preferably 6 degrees or more and 9 degrees or less with respect to the {110} surface. The manufacturing method of a semiconductor substrate has a process in which a semiconductor single crystal ingot is sliced at an inclination (off angle) of 5 degrees or more and 11 degrees or less, preferably 6 degrees or more and 9 degrees or less with respect to the {110} surface.

摘要翻译： 提供通过优化相对于半导体衬底表面的{110}表面的倾斜度（偏角）来减小其表面粗糙度的半导体衬底及其制造方法。 半导体衬底的表面具有相对于{...的角度为0度以上且0.12度以下或5度以上且11度以下，优选为6度以上且9度以下的倾斜度（偏离角） 110}表面。 半导体衬底的制造方法具有这样的处理：半导体单晶锭相对于5度以上且11度以下，优选6度以上且9度以下的倾斜（偏离角）切割 {110}表面。

公开(公告)号：US06602599B1

公开(公告)日：2003-08-05

申请号：US09590131

申请日：2000-06-09

申请人： Eiji Toyoda ,  Makoto Namikawa ,  Yoshio Terada

发明人： Eiji Toyoda ,  Makoto Namikawa ,  Yoshio Terada

IPC分类号： B32B2730

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J2203/31 ,  C09J2203/326 ,  H01L2221/68327 ,  Y10T428/1452 ,  Y10T428/1462 ,  Y10T428/2852 ,  Y10T428/287 ,  Y10T428/2891

摘要： A low-staining adhesive sheet provided with an adhesive layer containing as the main component a pressure-sensitive adhesive polymer on a base film, wherein the pressure-sensitive adhesive polymer is substantially free from oligomeric low-molecular weight matters; and a method for removing a resist material by using this low-staining adhesive sheet. This low-staining adhesive sheet gives no organic staining matters remaining on the surface of article (for example, substrate) to be used as an adherend and is useful in removing a resist material and foreign matters, and re-peeling surface-protectors, masking materials, and other materials.

摘要翻译： 一种低染色粘合片，其具有在基膜上含有压敏粘合剂聚合物作为主要成分的粘合剂层，其中该粘合剂聚合物基本上不含低聚物低分子量物质; 以及通过使用该低色粘接片除去抗蚀剂材料的方法。 这种低染色粘合片不会在用作被粘物的物品（例如基材）的表面上残留有机染色物质，并且可用于除去抗蚀剂材料和异物，并且再剥离表面保护剂，掩蔽 材料等材料。