公开(公告)号：US20240280915A1

公开(公告)日：2024-08-22

申请号：US18609116

申请日：2024-03-19

Applicant: FujiFilm Corporation

Inventor： Kei YAMAMOTO ,  Naohiro TANGO ,  Michihiro SHIRAKAWA

IPC: G03F7/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30

CPC classification number: G03F7/7065 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30 ,  G03F7/706831 ,  G03F7/706837

Abstract: Provided are a method for testing a photosensitive composition and a method for producing a photosensitive composition that can easily test whether or not the photosensitive composition exhibits a predetermined LWR. The method for testing a photosensitive composition has a step 1 of using a reference photosensitive composition including an acid decomposable resin having a group that is decomposed by an action of an acid to generate a polar group and a photoacid generator, to form a resist film on a substrate 1, removing the resist film on the substrate 1 using a treatment liquid, and measuring a number of defects on the substrate 1 in which the resist film on the substrate 1 has been removed, to obtain reference data; a step 2 of using a photosensitive composition for measurement including components of the same types as types of components included in the reference photosensitive composition, to form a resist film on a substrate 2, removing the resist film on the substrate 2 using a treatment liquid, and measuring a number of defects on the substrate 2 in which the resist film on the substrate 2 has been removed, to obtain measurement data; and a step 3 of performing comparison between the reference data and the measurement data to determine whether or not an allowable range is satisfied, wherein the treatment liquid includes predetermined components.

公开(公告)号：US20210364917A1

公开(公告)日：2021-11-25

申请号：US17386440

申请日：2021-07-27

Applicant: FUJIFILM Corporation

Inventor： Minoru UEMURA ,  Masafumi KOJIMA ,  Akiyoshi GOTO ,  Kei YAMAMOTO ,  Takashi KAWASHIMA

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C07C381/12 ,  C07C317/28 ,  C07C317/44 ,  C07D327/06 ,  C07C255/17 ,  C07D333/46 ,  C07C311/16 ,  C07C25/02 ,  C07D317/72

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition having excellent storage stability during long-term storage. In addition, also provided are a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a compound represented by General Formula (I) and an acid-decomposable resin. M1+A−-L-B−M2+  (I)

公开(公告)号：US20210318616A1

公开(公告)日：2021-10-14

申请号：US17344967

申请日：2021-06-11

Applicant: FUJIFILM Corporation

Inventor： Daisuke ASAKAWA ,  Takashi KAWASHIMA ,  Akiyoshi GOTO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/40 ,  G03F7/32

Abstract: According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition including a resin P having a repeating unit represented by General Formula (P1) and a compound that generates an acid having a pKa of −1.40 or more upon irradiation with actinic rays or radiation; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the composition, are provided. Mp represents a single bond or a divalent linking group. Lp represents a divalent linking group. Xp represents O, S, or NRN1. RN1 represents a hydrogen atom or a monovalent organic group. Rp represents a monovalent organic group.

公开(公告)号：US20210088905A1

公开(公告)日：2021-03-25

申请号：US17106170

申请日：2020-11-29

Applicant: FUJIFILM Corporation

Inventor： Masafumi KOJIMA ,  Minoru UEMURA ,  Takashi KAWASHIMA ,  Akiyoshi GOTO ,  Kei YAMAMOTO ,  Kazuhiro MARUMO ,  Keiyu OU

IPC: G03F7/039 ,  G03F7/038 ,  C08L33/10 ,  G03F7/32

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a photoacid generator A that generates an acid represented by General Formula (I), the acid having a pKa of −1.00 or more; one or more selected from the group consisting of a photoacid generator B that generates an acid having a pKa larger than that of an acid generated from the photoacid generator A by 1.00 or more, and a nitrogen-containing compound C having a pKa of a conjugate acid thereof larger than that of the acid generated from the photoacid generator A by 1.00 or more; and an acid-decomposable resin, in which in a case where the actinic ray-sensitive or radiation-sensitive resin composition includes a photoacid generator D that generates an acid having a pKa of less than −1.00, a ratio of the number of moles of the photoacid generator A to the number of moles of the photoacid generator D in the composition, is 1.0 or more.

公开(公告)号：US20170349686A1

公开(公告)日：2017-12-07

申请号：US15683884

申请日：2017-08-23

Applicant: FUJIFILM Corporation

Inventor： Naoki INOUE ,  Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO ,  Akiyoshi GOTO

IPC: C08F212/14 ,  G03F7/004 ,  C08F222/38 ,  C08F12/22 ,  G03F7/039 ,  C08F12/20

CPC classification number: C08F212/14 ,  C08F12/20 ,  C08F12/22 ,  C08F222/38 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/325

Abstract: A pattern forming method includes the following steps (a) to (d): (a) applying an actinic ray-sensitive or radiation-sensitive resin composition including a resin capable of increasing a polarity by the action of an acid onto a substrate to form a resist film, (b) forming an upper layer film on the resist film, (c) exposing the resist film having the upper layer film formed thereon, and (d) developing the exposed resist film using an organic developer to form a pattern, in which the resin capable of increasing the polarity by the action of an acid includes an acid-decomposable repeating unit having an acid-leaving group a having 4 to 7 carbon atoms, and the maximum value of the number of carbon atoms and the protection rate of the acid-leaving group a satisfy specific conditions.

公开(公告)号：US20160070174A1

公开(公告)日：2016-03-10

申请号：US14938061

申请日：2015-11-11

Applicant: FUJIFILM CORPORATION

Inventor： Shuhei YAMAGUCHI ,  Kei YAMAMOTO ,  Shohei KATAOKA

IPC: G03F7/32 ,  G03F7/20 ,  G03F7/038 ,  G03F7/16

CPC classification number: G03F7/325 ,  C08F220/28 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/20

Abstract: Disclosed is a pattern forming method including forming an active light sensitive or radiation sensitive film by coating a substrate with an active light sensitive or radiation sensitive resin composition; exposing the active light sensitive or radiation sensitive film; and forming a negative type pattern by developing the exposed active light sensitive or radiation sensitive film using a developer which includes an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) which includes a repeating unit (a) which has an acidic group and a lactone structure and of which, due to a polarity thereof being increased by an action of an acid, a solubility decreases with respect to a developer which includes an organic solvent.

Abstract translation: 公开了一种图案形成方法，包括通过用活性光敏或辐射敏感性树脂组合物涂布基底来形成活性光敏或辐射敏感膜; 暴露有源光敏或辐射敏感膜; 并使用包括有机溶剂的显影剂，通过显影曝光的有源光敏感或感光膜形成负型图案，其中活性光敏或辐射敏感性树脂组合物含有包含重复单元（a）的树脂（A） ），其具有酸性基团和内酯结构，并且由于其极性由于酸的作用而增加，相对于包含有机溶剂的显影剂，溶解度降低。

公开(公告)号：US20160004157A1

公开(公告)日：2016-01-07

申请号：US14853574

申请日：2015-09-14

Applicant: FUJIFILM CORPORATION

Inventor： Junichi ITO ,  Akinori SHIBUYA ,  Akiyoshi GOTO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO ,  Fumihiro YOSHINO

IPC: G03F7/038 ,  G03F7/32 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/038 ,  C07C381/12 ,  C08F220/14 ,  C08F220/18 ,  C08F220/26 ,  C08F220/28 ,  C08F220/30 ,  C08F220/36 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0274

Abstract: A method of forming a pattern includes (a) forming a film of an actinic-ray- or radiation-sensitive resin composition, (b) exposing the film to light, and (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern. The actinic-ray- or radiation-sensitive resin composition includes (A) a resin whose solubility in the developer comprising an organic solvent is lowered when acted on by an acid, which resin contains a repeating unit with any of lactone structures of general formula (1) below, and (B) a compound that when exposed to actinic rays or radiation, generates an acid.

Abstract translation: 形成图案的方法包括（a）形成光化射线或辐射敏感性树脂组合物的膜，（b）将膜曝光，和（c）用包含有机溶剂的显影剂显影曝光的膜 从而形成负模式。 光化射线或辐射敏感性树脂组合物包括（A）当在含有有机溶剂的显影剂中的溶解度降低的树脂（A）作用于酸时，树脂含有具有通式（III）的内酯结构的重复单元 1）和（B）当暴露于光化射线或辐射时产生酸的化合物。

公开(公告)号：US20150079508A1

公开(公告)日：2015-03-19

申请号：US14550181

申请日：2014-11-21

Applicant: FUJIFILM Corporation

Inventor： Junichi ITO ,  Shuhei YAMAGUCHI ,  Hidenori TAKAHASHI ,  Kei YAMAMOTO

IPC: G03F7/038 ,  G03F7/30

CPC classification number: G03F7/0046 ,  C08F220/18 ,  C08F220/22 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/325 ,  G03F7/40 ,  H01L21/027 ,  H01L21/0273

Abstract: There is provided a pattern forming method comprising (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition; (ii) a step of exposing the film; and (iii) a step of performing development by using a developer containing an organic solvent to form a negative pattern, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin capable of increasing the polarity by an action of an acid to decrease the solubility in a developer containing an organic solvent, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin having a repeating unit having a fluorine atom and not having a CF3 partial structure.

Abstract translation: 提供了一种图案形成方法，其包括（i）通过光化射线敏感或辐射敏感树脂组合物形成膜的步骤; （ii）曝光胶片的步骤; （iii）通过使用含有有机溶剂的显影剂形成负型图案进行显影的工序，其中，所述光化射线敏感性或辐射敏感性树脂组合物含有（A）能够通过 降低在含有有机溶剂的显影剂中的溶解性的酸，（B）在用光化射线或辐射照射时能够产生酸的化合物，（C）溶剂，（D）具有重复单元的树脂， 不具有CF 3部分结构的氟原子。

公开(公告)号：US20240248397A1

公开(公告)日：2024-07-25

申请号：US18610965

申请日：2024-03-20

Applicant: FUJIFILM Corporation

Inventor： Naohiro TANGO ,  Michihiro SHIRAKAWA ,  Kei YAMAMOTO

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0045 ,  G03F7/038 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/325

Abstract: An object of the present invention to provide an actinic ray-sensitive or radiation-sensitive resin composition that has high preservation stability and is characterized in that when etching treatment is performed using a resist pattern formed from the resist composition as a mask, defects are less likely to occur in a pattern formed. Another object of the present invention is to provide a method for producing a resist pattern.
An actinic ray-sensitive or radiation-sensitive resin composition according to the present invention contains a resin that becomes more polar under the action of acid, a photoacid generator, a compound Y that is at least one selected from the group consisting of a compound represented by formula (1) and a compound represented by formula (2), and a metal atom. The mass ratio of the content of the compound Y to the content of the metal atom is 1.0×10 to 1.0×109.

公开(公告)号：US20220283499A1

公开(公告)日：2022-09-08

申请号：US17748500

申请日：2022-05-19

Applicant: FUJIFILM Corporation

Inventor： Takeshi KAWABATA ,  Kei YAMAMOTO ,  Kazuyoshi MIZUTANI

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/32 ,  G03F7/20

Abstract: The present invention provides a composition for forming an underlayer film, with which an underlayer film having excellent surface flatness and solvent resistance can be formed. In addition, the present invention provides a resist pattern forming method and a manufacturing method of an electronic device, which are related to the composition for forming an underlayer film. The composition for forming an underlayer film according to the present invention is a composition for forming an underlayer film, which is used for forming an underlayer film under a resist film, including a monomer or a polymer containing an aromatic ring and a halogen-based organic solvent, in which a content of the halogen-based organic solvent is 0.001 to 50 ppm by mass with respect to a total mass of the composition for forming an underlayer film.