Abstract:
An object of the invention is to provide a photo-alignment copolymer which makes it possible to produce a photo-alignment film having excellent solvent resistance and liquid crystal aligning properties, and a photo-alignment film and an optical laminate produced using the photo-alignment copolymer. A photo-alignment copolymer of the invention is a photo-alignment copolymer having a repeating unit A including a photo-alignment group represented by Formula (A) and a repeating unit B including a crosslinkable group represented by Formula (B).
Abstract:
The near infrared absorbing curable composition includes: a compound represented by Formula (1); and a compound having a crosslinking group. In Formula (1), X1 and X2 each independently represent O, S, or a dicyanomethylene group, and A and B each independently represent a group represented by Formula (2). In Formula (2), a wave line represents a binding site of Formula (1), YS represents a group having active hydrogen, A1 represents an aromatic hydrocarbon ring or an aromatic heterocycle, RZ represents a substituent, m1 represents an integer of 0 to mA, mA represents an integer representing the maximum number of RZ's which may be substituted in A1, YS may be bonded to A1 or RZ to form a ring, and RZ may be bonded to A1 to form a ring.
Abstract:
To provide an infrared cut filter that has a wide view angle and excellent infrared shieldability and in which the generation of defects is suppressed, and a solid-state imaging device. An infrared cut filter has: a transparent base 1; an infrared absorbing film 2 that contains an infrared absorbing agent; and a dielectric multi-layer film 3, the infrared absorbing film 2 has a maximum absorption wavelength in a wavelength region of 600 nm or greater, and a ratio B/A of, to absorbance A at the maximum absorption wavelength before the infrared absorbing film 2 is dipped in at least one organic solvent selected from propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl 3-methoxypropionate, ethyl lactate, acetone, and ethanol, absorbance B at the wavelength at which the absorbance A is measured after the infrared absorbing film 2 is dipped in the organic solvent for 2 minutes at 25° C. is 0.9 or greater.
Abstract:
Provided are an organic transistor having high carrier mobility that contains a compound represented by Formula (1-1) or (1-2) in a semiconductor active layer; a compound; an organic semiconductor material for a non-light-emitting organic semiconductor device; a material for an organic transistor; a coating solution for a non-light-emitting organic semiconductor device; and an organic semiconductor film for a non-light-emitting organic semiconductor device (X1 represents S, O, Se, or NR9; X2 represents S, O, or Se; each of R1 to R9 represents a hydrogen atom or a substituent; at least one of R1, R2, R3, R4, R5, R6, R7, R8, and R9 represents -L-R; each of R9 to R17 represents a hydrogen atom or a substituent; at least one of R9, R10, R11, R12, R13, R14, R15, R16, and R17 represents -L-R; L represents a specific divalent linking group; and R represents an alkyl group, a cyano group, a vinyl group, an ethynyl group, an oxyethylene group, an oligo-oxyethylene group, a siloxane group, an oligosiloxane group, or a trialkylsilyl group).
Abstract:
An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor active layer is an organic film transistor using a compound that results in high carrier mobility when being used in the semiconductor active layer of the organic film transistor and exhibits high solubility in an organic solvent. (Each of R1 and R2 represents a hydrogen atom or a substituent; each of Ar1 and Ar2 independently represents a heteroarylene group or an arylene group; V1 represents a divalent linking group; m represents an integer of 0 to 6; cy represents a naphthalene ring or an anthracene ring; each of R3 and R4 represents a hydrogen atom or a substituent; each of Ar3 and Ar4 represents a heterocyclic aromatic ring or an aromatic ring; V2 represents a divalent linking group; p represents an integer of 0 to 6; n represents an integer of equal to or greater than 2; A is a divalent linking group represented by Formula (101′); each of RA1 to RA6 represents a hydrogen atom, a substituent, or a direct bond with Ar101 or Ar102 in Formula (101); and among the groups represented by RA1 to RA6, two different groups are direct bonds with Ar101 and Ar102 in Formula (101) respectively.)
Abstract translation:在半导体有源层中含有由式(1-1),(1-2)或(101)表示的n个重复单元构成的化合物的有机薄膜晶体管是使用结果的化合物的有机薄膜晶体管 当在有机薄膜晶体管的半导体有源层中使用时具有高载流子迁移率,并且在有机溶剂中表现出高溶解度。 (R 1和R 2各自表示氢原子或取代基; Ar 1和Ar 2各自独立地表示亚杂芳基或亚芳基; V1表示二价连接基团; m表示0〜6的整数; cy表示萘环 或蒽环; R 3和R 4各自表示氢原子或取代基; Ar 3和Ar 4各自表示杂环芳香环或芳香环; V2表示二价连接基团; p表示0〜6的整数; n 表示等于或大于2的整数; A是由式(101')表示的二价连接基团; RA 1至RA 6各自表示氢原子,取代基或与式(101)中的Ar 101或Ar 102直接结合 );在由RA1〜RA6表示的基团中,两个不同的基团分别是式(101)中的Ar 101和Ar 102的直接键。
Abstract:
An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that at least one of R1 to R4 and R6 to R9 represents a substituent represented by -L-R, L represents a specific divalent linking group, and R represents an alkyl group, an oligooxyethylene group, an oligosiloxane group, or a trialkylsilyl group.
Abstract translation:具有含有式(1)表示的化合物的半导体活性层的有机薄膜晶体管在重复操作之后具有高载流子迁移率和阈值电压的小变化。 R 1至R 10表示H或取代基,条件是R 1至R 4和R 6至R 9中的至少一个表示由-LR表示的取代基,L表示特定二价连接基团,R表示烷基,低聚氧乙烯基, 低聚硅氧烷基或三烷基甲硅烷基。
Abstract:
The present invention provides a laminate having excellent clearness of reflected light without impairing visibility of an image, a visual-line tracking system using the laminate, and a head-mounted display on which the visual-line tracking system is mounted. The laminate including a near infrared light reflecting layer and a near infrared light absorbing layer, in which a visible light transmittance of the laminate is 60% or more, the near infrared light absorbing layer contains a near infrared absorbing compound, and the following expressions (1) and (2) are satisfied.
Δθ1≤3° (1)
R2/R1≤0.1 (2)
Δθ1: a half-width of a peak of near infrared reflected light with the highest intensity, which is obtained from a measurement result of an angle dependence of intensity of near infrared light reflected by the near infrared light reflecting layer R1: the highest intensity of near infrared reflected light among peaks of the near infrared reflected light obtained from the measurement result of the angle dependence of the intensity of near infrared light reflected by the near infrared light reflecting layer R2: the second highest intensity of near infrared reflected light among the peaks of the near infrared reflected light obtained from the measurement result of the angle dependence of the intensity of near infrared light reflected by the near infrared light reflecting layer
Abstract:
A light absorption anisotropic film which has absorption in a range of a near-infrared region (particularly, a wavelength of 700 to 1600 nm) and is excellent in bendability, a manufacturing method of a light absorption anisotropic film, a display device, a camera, a sensor, and an apparatus. The light absorption anisotropic film contains a dichroic substance having a hydrophilic group, in which a film thickness is 10 m or less and the light absorption anisotropic film has a maximal absorption wavelength in a wavelength range of 700 to 1600 nm.
Abstract:
Provided is a composition capable of forming an optically anisotropic film exhibiting reverse wavelength dispersibility and an Nz factor of about 0.50 (0.40 to 0.60); as well as an optically anisotropic, a circularly polarizing plate, and a display device. The composition includes a non-colorable rod-like compound having an acid group or a salt thereof, a non-colorable plate-like compound having an acid group or a salt thereof, and a salt consisting of a cation and an anion, and exhibiting lyotropic liquid crystallinity, in which a ratio W obtained by Expression (W) is 0.25 to 1.75, and a maximum absorption wavelength in a wavelength range of 230 to 400 nm of the rod-like compound is smaller than a maximum absorption wavelength in a wavelength range of 230 to 400 nm of the plate-like compound. Ratio W = ( C 1 + C 2 + C 3 ) - ( A 1 + A 2 ) A 2 ( W )
Abstract:
An object to be achieved by the present invention is to provide an organic semiconductor element and an organic semiconductor film having high mobility and excellent heat resistance, and a manufacturing method thereof, to provide a novel compound that is suitable as an organic semiconductor, and to provide a composition for forming an organic semiconductor film in which coating film formability is excellent, with which an organic semiconductor element that has high mobility can be obtained, and in which heat resistance is excellent, an organic semiconductor element in which the composition for forming an organic semiconductor film is used, and a manufacturing method thereof.The organic semiconductor element according to the present invention includes a compound represented by Formula 1 below included in an organic semiconductor layer.