公开(公告)号：US08490573B2

公开(公告)日：2013-07-23

申请号：US12968114

申请日：2010-12-14

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

IPC分类号： B05C3/02 ,  B05D1/18

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

公开(公告)号：US08316866B2

公开(公告)日：2012-11-27

申请号：US11612352

申请日：2006-12-18

申请人： Erik M. Freer ,  John M. deLarios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker

发明人： Erik M. Freer ,  John M. deLarios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker

IPC分类号： B08B3/00

CPC分类号： H01L21/67092 ,  B08B3/00 ,  B08B7/00 ,  B08B7/02 ,  C11D9/02 ,  C11D11/0047 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02096 ,  H01L21/31133 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67086 ,  Y10T137/4891

摘要： A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.

摘要翻译： 提供一种清洗基板的方法。 该方法通过将激活溶液施加到基底的表面来启动。 活化溶液和基材的表面与固体清洁表面的表面接触。 活化溶液被吸收到固体清洁元件的一部分中，然后基底或固体清洁表面相对于彼此移动以清洁基底的表面。 还提供了一种用经历塑性变形的固体清洁元件来清洁基板的表面的方法。 还提供了相应的清洁装置。

公开(公告)号：US20120017950A1

公开(公告)日：2012-01-26

申请号：US13252859

申请日：2011-10-04

申请人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fred C. Redeker

发明人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fred C. Redeker

IPC分类号： B08B3/04

CPC分类号： H01L21/67057 ,  B08B3/003 ,  B08B7/0014 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described.

摘要翻译： 提供一种清洗基板的方法。 在该方法中，提供了非牛顿流体的流动，其中至少一部分流动呈现出流动。 为了从基板的表面去除颗粒，将基板的表面与显示塞子流的流动部分接触，使得显示塞子流的流动部分在基板的表面上移动。 还描述了用于清洁基板的附加方法和装置。

公开(公告)号：US08043441B2

公开(公告)日：2011-10-25

申请号：US11153957

申请日：2005-06-15

申请人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fred C. Redeker

发明人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fred C. Redeker

IPC分类号： B08B3/00

CPC分类号： H01L21/67057 ,  B08B3/003 ,  B08B7/0014 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described.

摘要翻译： 提供一种清洗基板的方法。 在该方法中，提供了非牛顿流体的流动，其中至少一部分流动呈现出流动。 为了从基板的表面去除颗粒，将基板的表面与显示塞子流的流动部分接触，使得显示塞子流的流动部分在基板的表面上移动。 还描述了用于清洁基板的附加方法和装置。

公开(公告)号：US20100170803A1

公开(公告)日：2010-07-08

申请号：US12724379

申请日：2010-03-15

申请人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

发明人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

IPC分类号： C25D7/12

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  H01L21/2885

摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

摘要翻译： 第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。 可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。 阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。 当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。 此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

公开(公告)号：US07704367B2

公开(公告)日：2010-04-27

申请号：US10879263

申请日：2004-06-28

申请人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

发明人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

IPC分类号： C25D7/12 ,  H01L21/288 ,  B23H7/26 ,  C25B11/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  H01L21/2885

摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

摘要翻译： 第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。 可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。 阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。 当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。 此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

公开(公告)号：US20090308410A1

公开(公告)日：2009-12-17

申请号：US11532491

申请日：2006-09-15

申请人： Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker

发明人： Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker

IPC分类号： C11D3/16 ,  B08B7/00

CPC分类号： H01L21/02052 ,  B08B3/04 ,  B08B7/00 ,  C11D11/0047 ,  C11D17/0013 ,  C11D17/0017 ,  G03F1/82 ,  H01L21/02057 ,  H01L21/02096 ,  H01L21/67051

摘要： Methods for cleaning using a tri-state body are disclosed. A substrate having a particle deposited thereon is provided. A tri-state body that has a solid portion, liquid portion, and a gas portion is generated. A force is applied over the tri-state body to promulgate an interaction between the solid portion and the particle. The tri-state body is removed along with the particle from the surface of the substrate. The interaction between the solid portion and the particle causing the particle to be removed along with the tri-state body.

摘要翻译： 公开了使用三态体进行清洁的方法。 提供了沉积有颗粒的基板。 产生具有固体部分，液体部分和气体部分的三态体。 在三态体上施加力以发出固体部分和颗粒之间的相互作用。 将三态体与来自衬底表面的颗粒一起去除。 固体部分和颗粒之间的相互作用导致颗粒与三态体一起被去除。

公开(公告)号：US20090242413A1

公开(公告)日：2009-10-01

申请号：US12482171

申请日：2009-06-10

申请人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker

发明人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker

IPC分类号： C25D21/10 ,  C25D3/02

CPC分类号： C25D5/026 ,  C25D5/02 ,  C25D5/06 ,  C25D17/14

摘要： An electroplating head is disposed above and proximate to an upper surface of a wafer. Cations are transferred from an anode to an electroplating solution within the electroplating head. The electroplating solution flows downward through a porous electrically resistive material at an exit of the electroplating head to be disposed on the upper surface of the wafer. An electric current is established between the anode and the upper surface of the wafer through the electroplating solution. The electric current is uniformly distributed by the porous electrically resistive material present between the anode and the upper surface of the wafer. The electric current causes the cations to be attracted to the upper surface of the wafer.

摘要翻译： 电镀头设置在晶片的上表面上方并靠近晶片的上表面。 阳离子从阳极转移到电镀头内的电镀溶液中。 电镀溶液在电镀头的出口处向下流过多孔电阻材料以设置在晶片的上表面上。 通过电镀溶液在晶片的阳极和上表面之间建立电流。 通过存在于阳极和晶片上表面之间的多孔电阻材料均匀分布电流。 电流导致阳离子被吸引到晶片的上表面。

公开(公告)号：US20080271992A1

公开(公告)日：2008-11-06

申请号：US10882712

申请日：2004-06-30

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D17/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US07416370B2

公开(公告)日：2008-08-26

申请号：US11154129

申请日：2005-06-15

申请人： John M. de Larios ,  Mike Ravkin ,  John Parks ,  Mikhail Korolik ,  Fred C. Redeker

发明人： John M. de Larios ,  Mike Ravkin ,  John Parks ,  Mikhail Korolik ,  Fred C. Redeker

IPC分类号： B65G51/16

CPC分类号： H01L21/67784 ,  H01L21/67057

摘要： A method for transporting a substrate is provided. In this method, a non-Newtonian fluid is provided and the substrate is suspended in the non-Newtonian fluid. The non-Newtonian fluid is capable of supporting the substrate. Thereafter, a supply force is applied on the non-Newtonian fluid to cause the non-Newtonian fluid to flow, whereby the flow is capable of moving the substrate along a direction of the flow. Apparatuses and systems for transporting the substrate using the non-Newtonian fluid also are described.

摘要翻译： 提供了一种输送基板的方法。 在该方法中，提供了非牛顿流体，并将基底悬挂在非牛顿流体中。 非牛顿流体能够支撑基底。 此后，向非牛顿流体施加供应力以使非牛顿流体流动，由此流动能够沿着流动方向移动基底。 还描述了使用非牛顿流体输送基底的装置和系统。