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    Method and apparatus for plating semiconductor wafers
    1.
    发明授权
    Method and apparatus for plating semiconductor wafers 有权
    用于电镀半导体晶片的方法和装置

    公开(公告)号：US08048283B2

    公开(公告)日：2011-11-01

    申请号：US12724379

    申请日：2010-03-15

    申请人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

    发明人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

    IPC分类号： C25D5/02

    CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  H01L21/2885

    摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

    摘要翻译： 第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。 可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。 阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。 当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。 此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

    Method and Apparatus for Plating Semiconductor Wafers
    2.
    发明申请
    Method and Apparatus for Plating Semiconductor Wafers 有权
    用于电镀半导体晶片的方法和装置

    公开(公告)号：US20100170803A1

    公开(公告)日：2010-07-08

    申请号：US12724379

    申请日：2010-03-15

    申请人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

    发明人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

    IPC分类号： C25D7/12

    CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  H01L21/2885

    摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

    摘要翻译： 第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。 可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。 阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。 当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。 此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

    Method and apparatus for plating semiconductor wafers
    3.
    发明授权
    Method and apparatus for plating semiconductor wafers 有权
    用于电镀半导体晶片的方法和装置

    公开(公告)号：US07704367B2

    公开(公告)日：2010-04-27

    申请号：US10879263

    申请日：2004-06-28

    申请人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

    发明人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

    IPC分类号： C25D7/12 ,  H01L21/288 ,  B23H7/26 ,  C25B11/00

    CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  H01L21/2885

    摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

    摘要翻译： 第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。 可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。 阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。 当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。 此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

    Method and apparatus for plating semiconductor wafers
    4.
    发明申请
    Method and apparatus for plating semiconductor wafers 有权
    用于电镀半导体晶片的方法和装置

    公开(公告)号：US20050284767A1

    公开(公告)日：2005-12-29

    申请号：US10879263

    申请日：2004-06-28

    申请人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred Redeker ,  Carl Woods

    发明人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred Redeker ,  Carl Woods

    IPC分类号： C25D7/12 ,  H01L21/288

    CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  H01L21/2885

    摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

    摘要翻译： 第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。 可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。 阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。 当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。 此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

    Apparatus for plating semiconductor wafers
    6.
    发明授权
    Apparatus for plating semiconductor wafers 有权
    半导体晶片电镀设备

    公开(公告)号：US07862693B2

    公开(公告)日：2011-01-04

    申请号：US12554860

    申请日：2009-09-04

    申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

    发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

    IPC分类号： C25D21/12 ,  C25D19/00 ,  C25B15/00

    CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

    摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

    摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

    Edge wheel dry manifold
    9.
    发明授权
    Edge wheel dry manifold 有权
    边缘轮干歧管

    公开(公告)号：US07350315B2

    公开(公告)日：2008-04-01

    申请号：US10745219

    申请日：2003-12-22

    申请人： Glenn W. Davis ,  Carl Woods ,  John Parks ,  Fred C. Redeker ,  Mike Ravkin ,  Michael L. Orbock

    发明人： Glenn W. Davis ,  Carl Woods ,  John Parks ,  Fred C. Redeker ,  Mike Ravkin ,  Michael L. Orbock

    IPC分类号： F26B13/30 ,  B08B5/04

    CPC分类号： H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/68707

    摘要： A apparatus for drying a substrate includes a vacuum manifold positioned adjacent to an edge wheel. The edge wheel includes an edge wheel groove for receiving a peripheral edge of a substrate, and the edge wheel is capable of rotating the substrate at a desired set velocity. The vacuum manifold includes a proximity end having one or more vacuum ports defined therein. The proximity end is positioned at least partially within the edge wheel groove, and using supplied vacuum removes fluids that accumulate in the edge wheel groove and prevents re-deposit of trapped fluids around the peripheral edge of the substrate.

    摘要翻译： 用于干燥衬底的设备包括邻近边缘轮定位的真空歧管。 边缘轮包括用于接收基板周边的边缘轮槽，并且边缘轮能够以所需的设定速度旋转基板。 真空歧管包括具有限定在其中的一个或多个真空端口的邻近端。 邻近端部至少部分地定位在边缘轮槽内，并且使用提供的真空去除积聚在边缘轮槽中的流体并且防止捕获的流体围绕衬底的周边边缘重新沉积。