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公开(公告)号：US20080265238A1
公开(公告)日：2008-10-30
申请号：US12056227
申请日：2008-03-26
Applicant: Frederick T. Chen , Yen Chuo , Hong-Hui Hsu , Jyi-Tyan Yeh , Ming-Jinn Tsai
Inventor： Frederick T. Chen , Yen Chuo , Hong-Hui Hsu , Jyi-Tyan Yeh , Ming-Jinn Tsai
IPC: H01L45/00
CPC classification number: H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/144 , H01L45/1666 , H01L45/1691
Abstract: Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a first electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer and the first electrode. A phase change material layer disposed in the second dielectric layer to electrically contact the first electrode. A third dielectric layer is disposed over the second dielectric layer. A second electrode is disposed in the third dielectric layer to electrically connect the phase change material layer and at least one gap disposed in the first dielectric layer or the second dielectric layer to thereby isolate portions of the phase change material layer and portions of the first or second dielectric layer adjacent thereto.
Abstract translation: 提供了相变存储器件及其制造方法。 相变存储器件的示例性实施例包括设置在第一介电层中的第一电极。 第二电介质层设置在第一电介质层和第一电极之上。 一种相变材料层，设置在第二电介质层中以与第一电极电接触。 第三电介质层设置在第二电介质层上。 第二电极设置在第三电介质层中以将相变材料层和布置在第一介电层或第二介电层中的至少一个间隙电连接，从而隔离相变材料层的部分和第一或 第二电介质层。
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公开(公告)号：US20080186762A1
公开(公告)日：2008-08-07
申请号：US12010761
申请日：2008-01-29
Applicant: Yen Chuo , Frederick T. Chen
Inventor： Yen Chuo , Frederick T. Chen
IPC: G11C11/00
CPC classification number: G11C13/0004 , G11C2213/56 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1683
Abstract: A phase-change memory is provided. The phase-change memory comprises first and second electrodes, wherein the first and second electrodes comprise phase-change material. A conductive path is formed between the first and second electrodes and electrically connects the first and second electrodes, wherein the conductive path comprises an embedded metal layer and a phase-change layer resulting in current from the first electrode to the second electrode or from the second electrode to the first electrode passing through the embedded metal layer and the phase change layer.
Abstract translation: 提供了相变存储器。 相变存储器包括第一和第二电极，其中第一和第二电极包括相变材料。 导电路径形成在第一和第二电极之间并且电连接第一和第二电极，其中导电路径包括嵌入金属层和相变层，其导致从第一电极到第二电极或第二电极的电流 电极通过嵌入金属层和相变层的第一电极。
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公开(公告)号：US20130087757A1
公开(公告)日：2013-04-11
申请号：US13339342
申请日：2011-12-28
Applicant: Wei-Su Chen , Frederick T. Chen , Shan-Yi Yang , Peng-Sheng Chen
Inventor： Wei-Su Chen , Frederick T. Chen , Shan-Yi Yang , Peng-Sheng Chen
CPC classification number: H01L45/04 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1691
Abstract: A method of manufacturing a resistive memory device is provided. A bottom electrode and a cup-shaped electrode connected to the bottom electrode are formed in an insulating layer. A cover layer extends along a first direction is formed and covers a first area surrounded by the cup-shaped electrode and exposes a second area and a third area surrounded by the cup-shaped electrode. A sacrificial layer is formed above the insulating layer. A stacked layer extends along a second direction and covers the second area surrounded by the cup-shaped electrode and a portion of the corresponding cover layer is formed. A conductive spacer material layer is formed on the stacked layer and the sacrificial layer. By using the sacrificial layer as an etch stop layer, the conductive spacer material layer is etched to form a conductive spacer at the sidewall of the stacked layer.
Abstract translation: 提供一种制造电阻式存储器件的方法。 连接到底部电极的底部电极和杯形电极形成在绝缘层中。 形成沿着第一方向延伸的覆盖层，并且覆盖由杯状电极包围的第一区域，并露出由杯状电极包围的第二区域和第三区域。 在绝缘层之上形成牺牲层。 堆叠层沿着第二方向延伸并且覆盖由杯形电极包围的第二区域，并且形成相应覆盖层的一部分。 导电间隔物层形成在堆叠层和牺牲层上。 通过使用牺牲层作为蚀刻停止层，蚀刻导电间隔物材料层，以在堆叠层的侧壁处形成导电间隔物。
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公开(公告)号：US20130001494A1
公开(公告)日：2013-01-03
申请号：US13173945
申请日：2011-06-30
Applicant: Frederick T. Chen , Heng-Yuan Lee , Yu-Sheng Chen
Inventor： Frederick T. Chen , Heng-Yuan Lee , Yu-Sheng Chen
IPC: H01L45/00
CPC classification number: G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/74 , G11C2213/76 , H01L27/2418 , H01L27/2427 , H01L27/249 , H01L45/08 , H01L45/1226 , H01L45/146
Abstract: A memory cell includes a memory element, a current-limiting element electrically coupled to the memory element, and a high-selection-ratio element electrically coupled to the current-limiting element. The memory element is configured to store data as a resistance state. The current-limiting element is a voltage-controlled resistor (VCR) having a resistance that decreases when a voltage applied thereto increases. The high-selection-ratio element has a first resistance that is small when a voltage applied to the memory cell is approximately equal to a selection voltage of the memory cell, and has a second resistance that is substantially larger than the first resistance when the voltage applied to the memory cell is approximately equal to one-half of the selection voltage.
Abstract translation: 存储单元包括存储元件，电耦合到存储元件的限流元件，以及电耦合到限流元件的高选择比元件。 存储元件被配置为将数据存储为电阻状态。 限流元件是具有当施加的电压增加时电阻降低的压控电阻器（VCR）。 高选择比元件在施加到存储单元的电压近似等于存储单元的选择电压时具有小的第一电阻，并且具有比电压的第一电阻显着大于第一电阻的第二电阻 施加到存储单元大约等于选择电压的一半。
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Patent Agency Ranking
公开(公告)号：US08198620B2
公开(公告)日：2012-06-12
申请号：US12636794
申请日：2009-12-14
Applicant: Frederick T. Chen , Ming-Jinn Tsai , Wei-Su Chen , Heng-Yuan Lee
Inventor： Frederick T. Chen , Ming-Jinn Tsai , Wei-Su Chen , Heng-Yuan Lee
CPC classification number: H01L45/08 , H01L27/2436 , H01L27/2463 , H01L45/124 , H01L45/1266 , H01L45/146 , H01L45/16
Abstract: A resistance switching memory is introduced herein. The resistance switching memory includes a highly-insulating or resistance-switching material formed to cover the sidewall of a patterned metal line, and extended alongside a dielectric layer sidewall to further contact a portion of the top surface of the lower electrode. The other part of the top surface of the lower electrode is covered by an insulating layer between the top electrode and the lower electrode. An oxygen gettering metal layer in the lower electrode occupies a substantial central part of the top surface of the lower electrode and is partially covered by the highly-insulating or resistance-switching material. A switching area is naturally very well confined to the substantial central part of the oxygen gettering metal layer of the lower electrode.
Abstract translation: 本文介绍了电阻切换存储器。 电阻切换存储器包括形成为覆盖图案化金属线的侧壁的高绝缘或电阻切换材料，并且沿着介电层侧壁延伸以进一步接触下电极的顶表面的一部分。 下电极的顶表面的另一部分被顶电极和下电极之间的绝缘层覆盖。 下电极中的吸氧金属层占据下电极顶表面的实质中心部分，并被高绝缘或电阻切换材料部分地覆盖。 开关区域自然非常好地局限在下电极的吸氧金属层的实质中心部分。
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公开(公告)号：US20110140067A1
公开(公告)日：2011-06-16
申请号：US12636794
申请日：2009-12-14
Applicant: Frederick T. Chen , Ming-Jinn Tsai , Wei-Su Chen , Heng-Yuan Lee
Inventor： Frederick T. Chen , Ming-Jinn Tsai , Wei-Su Chen , Heng-Yuan Lee
CPC classification number: H01L45/08 , H01L27/2436 , H01L27/2463 , H01L45/124 , H01L45/1266 , H01L45/146 , H01L45/16
Abstract: A resistance switching memory is introduced herein. The resistance switching memory includes a highly-insulating or resistance-switching material formed to cover the sidewall of a patterned metal line, and extended alongside a dielectric layer sidewall to further contact a portion of the top surface of the lower electrode. The other part of the top surface of the lower electrode is covered by an insulating layer between the top electrode and the lower electrode. An oxygen gettering metal layer in the lower electrode occupies a substantial central part of the top surface of the lower electrode and is partially covered by the highly-insulating or resistance-switching material. A switching area is naturally very well confined to the substantial central part of the oxygen gettering metal layer of the lower electrode.
Abstract translation: 本文介绍了电阻切换存储器。 电阻切换存储器包括形成为覆盖图案化金属线的侧壁的高绝缘或电阻切换材料，并且沿着介电层侧壁延伸以进一步接触下电极的顶表面的一部分。 下电极的顶表面的另一部分被顶电极和下电极之间的绝缘层覆盖。 下电极中的吸氧金属层占据下电极顶表面的实质中心部分，并被高绝缘或电阻切换材料部分地覆盖。 开关区域自然非常好地局限在下电极的吸氧金属层的实质中心部分。
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公开(公告)号：US20100117050A1
公开(公告)日：2010-05-13
申请号：US12269282
申请日：2008-11-12
Applicant: Frederick T. Chen , Ming-Jinn Tsai
Inventor： Frederick T. Chen , Ming-Jinn Tsai
CPC classification number: H01L45/06 , H01L27/24 , H01L27/2409 , H01L27/2436 , H01L45/122 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/1246 , H01L45/1253 , H01L45/128 , H01L45/14 , H01L45/144 , H01L45/1608 , H01L45/1691
Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.
Abstract translation: 提供具有电隔离导体的相变存储元件。 相变存储元件包括：第一电极和第二电极; 电连接到第一电极和第二电极的相变材料层; 以及设置在第一电极和第二电极之间的至少两个电隔离导体，直接接触相变材料层。
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公开(公告)号：US20090045386A1
公开(公告)日：2009-02-19
申请号：US11889522
申请日：2007-08-14
Applicant: Frederick T. Chen
Inventor： Frederick T. Chen
CPC classification number: G11C11/5678 , G11C13/0004 , G11C2213/56 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
Abstract: A phase-change memory element. The phase-change memory element comprises a first electrode and a second electrode. A first phase change layer is electrically coupled to the first electrode. A second phase change layer is electrically coupled to the second electrode. A conductive bridge is formed between and electrically coupled to the first and second phase change layers.
Abstract translation: 相变存储元件。 相变存储元件包括第一电极和第二电极。 第一相变层电耦合到第一电极。 第二相变层电耦合到第二电极。 导电桥形成在电耦合到第一和第二相变层之间。
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公开(公告)号：US20080145796A1
公开(公告)日：2008-06-19
申请号：US11613121
申请日：2006-12-19
Applicant: Frederick T. Chen
Inventor： Frederick T. Chen
IPC: G03F7/213
CPC classification number: G03F7/2022 , G03F7/0035 , G03F7/095
Abstract: A method of photolithographic exposure is disclosed. The photolithographic exposure method comprises providing a substrate, forming a first resist layer thereon, forming a second resist layer on the first resist layer, the second resist layer providing a transmission which first increases then decreases as exposure dose increases, and exposing the second resist layer.
Abstract translation: 公开了一种光刻曝光方法。 光刻曝光方法包括提供基板，在其上形成第一抗蚀剂层，在第一抗蚀剂层上形成第二抗蚀剂层，提供首先增加的透射率的第二抗蚀剂层随着曝光剂量增加而减小，并且暴露第二抗蚀剂层 。
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