摘要:
A radiation detector formed using silicon-on-insulator technology. The radiation detector includes a silicon layer formed on an insulating substrate, wherein the silicon layer includes a PNPN structure, and a gate layer formed over the PNPN structure, wherein the gate layer includes a PN gate. Latch-up occurs in the radiation detector only in response to incident radiation.
摘要:
An integrated circuit that includes a dynamic logic gate having an output node at which a logical output value of the logic gate is detected and also includes a circuit for selectable alteration of the soft error susceptibility of the dynamic logic gate.
摘要:
A domino circuit design for handling high stress conditions. The domino logic circuit includes a programmable mechanism for choosing whether the circuit is operating during normal operations or during a stress test, such as a burn-in procedure. In particular, the circuit includes a dual purpose transistor that is controllable by either a precharge signal or an output signal, and includes a mechanism for selecting whether the precharge signal or the output signal is to control the gate input of the dual purpose transistor. Accordingly, the dual purpose transistor will either act in parallel with the precharge device, or a keeper device depending on the mode of operation chosen.
摘要:
A static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.
摘要:
A method, system and computer program product for estimating a static power consumption of an integrated circuit are disclosed. The static power consumption of a cell of the integrated circuit is characterized based on contributions of an input node(s) and an output node(s) of the cell. A contribution considers a leakage weight and a leakage probability of a node. A logic template of the cell may be created to better represent a contribution of an internal node to the static power consumption of the cell.
摘要:
An error-correction code is generated on a line-by-line basis of the physical logic register and latch contents that store encoded words within a processor just before the processor is put into sleep mode, and later-generated syndrome bits are checked for any soft errors when the processor wakes back up, e.g., as part of the power-up sequence.
摘要:
A design structure for a static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.
摘要:
A static random access memory (SRAM) circuit includes first SRAM cell and a second SRAM cell that are configured to operate in a shared mode and/or an independent mode. In one example, a shared mode includes the sharing of a memory node of a first SRAM cell. In another example, an independent mode includes isolating a first SRAM cell from a second SRAM cell such that they operate independently.
摘要:
A radiation detecting system including a radiation detecting section having one or more radiation detecting circuits and a circuit adjustment section for adjusting other circuitry to be protected. Radiation detecting circuits are provided to detect a pulse of radiation and/or a total radiation dose accumulation.
摘要:
A method of forming a silicon on insulator (SOI) body contact at a pair of field effect transistors (FETs), a sense amplifier including a balanced pair of such FETs and a RAM including the sense amplifiers. A pair of gates are formed on a SOI silicon surface layer. A dielectric bridge is formed between a pair of gates when sidewall spacers are formed along the gates. Source/drain (S/D) conduction regions are formed in the SOI surface layer adjacent the sidewalls at the pair of gates. The dielectric bridge blocks selectively formation of S/D conduction regions. A passivating layer is formed over the pair of gates and the dielectric bridge. Contacts are opened partially through the passivation layer. Then, a body contact is opened through the bridge to SOI surface layer and a body contact diffusion is formed. Contact openings are completed through the passivation layer at the S/D diffusions. Tungsten studs are formed in the contact openings.