公开(公告)号：US20050089634A1

公开(公告)日：2005-04-28

申请号：US10986283

申请日：2004-11-12

申请人： Hayashi Otsuki

发明人： Hayashi Otsuki

IPC分类号： C23C16/02 ,  C23C16/30 ,  C23C16/34 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768

CPC分类号： H01L21/28088 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/308 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/45561 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L28/56 ,  H01L28/60 ,  H01L28/75 ,  H01L2221/1078

摘要： The present invention generally relates to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film. The TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, O and N to have a higher barrier characteristic than those of conventional TiN thin films, so that TiN-series thin film can suitably used as a barrier layer. In addition, a TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, N and P to have a lower resistance than those of conventional TiN films, so that TiN-series thin film can suitably used as a barrier layer or a capacitor top electrode. Moreover, if a TiN-series thin film containing Ti, O, N and P is formed by a CVD, the TiN-series thin film can have both of a high barrier characteristic and a low resistance characteristic.

摘要翻译： 本发明一般涉及用于沉积金属氮化物系列薄膜（通常为TiN系列薄膜）的方法。 根据本发明的TiN系薄膜通过CVD形成，并且包含Ti，O和N以具有比常规TiN薄膜更高的阻挡特性，使得TiN系薄膜可以适当地用作 阻挡层。 此外，通过CVD形成本发明的TiN系薄膜，其含有比现有的TiN膜低的电阻，因此TiN系薄膜可以适当地用作 阻挡层或电容器顶部电极。 此外，如果通过CVD形成含有Ti，O，N和P的TiN系薄膜，则TiN系薄膜可以具有高阻挡特性和低电阻特性。

公开(公告)号：US07894059B2

公开(公告)日：2011-02-22

申请号：US11933114

申请日：2007-10-31

申请人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

发明人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

IPC分类号： G01N21/00

CPC分类号： G01N1/24 ,  C23C16/4405 ,  C23C16/4412 ,  G01N15/06 ,  G01N2015/0693 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/68742 ,  Y10T137/8593 ,  Y10T137/87652 ,  Y10T137/8766

摘要： The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

摘要翻译： 本发明提供一种粒子测量系统，其设置在处理系统40中，该处理系统40产生通过真空泵98排出处理室48中的空气或气体而获得的气氛，并将与半导体制造有关的工艺应用于晶片W 附着在排气管90上，排气管90将处理室48的排气口86与真空泵98连接，并测量废气中的颗粒数量及其测量方法，该系统和方法提供处理 系统和清洁方法，其通过基于废气中的颗粒数量确定终点并执行不需要的膜的清洁来终止蚀刻工艺。

公开(公告)号：US20060231028A1

公开(公告)日：2006-10-19

申请号：US11446395

申请日：2006-06-05

申请人： Hayashi Otsuki

发明人： Hayashi Otsuki

IPC分类号： C23C16/00

CPC分类号： H01L21/28088 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/308 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/45561 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L28/56 ,  H01L28/60 ,  H01L28/75 ,  H01L2221/1078

摘要： The present invention generally relates to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film. The TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, O and N to have a higher barrier characteristic than those of conventional TiN thin films, so that TiN-series thin film can suitably used as a barrier layer. In addition, a TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, N and P to have a lower resistance than those of conventional TiN films, so that TiN-series thin film can suitably used as a barrier layer or a capacitor top electrode. Moreover, if a TiN-series thin film containing Ti, O, N and P is formed by a CVD, the TiN-series thin film can have both of a high barrier characteristic and a low resistance characteristic.

公开(公告)号：US06817381B2

公开(公告)日：2004-11-16

申请号：US10437396

申请日：2003-05-14

申请人： Hayashi Otsuki ,  Yutaka Miura

发明人： Hayashi Otsuki ,  Yutaka Miura

IPC分类号： F16K1110

CPC分类号： F16K11/0856 ,  F17D1/04 ,  Y10T137/87885

摘要： A process gas line (255) for carrying WF6 gas for nucleation, a process gas line (257) for carrying WF6 gas for film deposition after nucleation are joined at a single joint (280) to a carrier gas line (256). A gas line (271) is connected to the joint (280) to carry a mixed gas of the carrier gas and WF6 gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line (256) and the gas line (271) extending on the opposite sides of the joint (280) extend along a straight line, and the process gas lines (255, 257) are perpendicular to the gas line (271).

摘要翻译： 用于携带用于成核的WF6气体的工艺气体管线（255），用于承载成核后的用于膜沉积的WF6气体的工艺气体管线（257）在单个接头（280）连接到载气管线（256）。 气体管线（271）连接到接头（280），以将载气和WF 6气体的混合气体输送到由处理容器限定的处理室。 在接头（280）的相对侧延伸的载气管线（256）和气体管线（271）的截面沿直线延伸，并且工艺气体管线（255,257）垂直于气体管线 271）。

公开(公告)号：US07511814B2

公开(公告)日：2009-03-31

申请号：US11782031

申请日：2007-07-24

申请人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

发明人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

IPC分类号： G01N21/00

CPC分类号： G01N1/24 ,  C23C16/4405 ,  C23C16/4412 ,  G01N15/06 ,  G01N2015/0693 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/68742 ,  Y10T137/8593 ,  Y10T137/87652 ,  Y10T137/8766

摘要： The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

公开(公告)号：US20080069966A1

公开(公告)日：2008-03-20

申请号：US11980570

申请日：2007-10-31

申请人： Hayashi Otsuki

发明人： Hayashi Otsuki

IPC分类号： C23C4/10 ,  C23C16/06 ,  C23C16/44 ,  C23F1/00 ,  C23C30/00

CPC分类号： C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

摘要： A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al2O3 and Y2O3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.

摘要翻译： 本发明的处理装置具有安装有半导体晶片的安装室，并且具有用于在加热，等离子体和工艺气体或其组合中的任一种下对基板进行加工的构件，其中Al 2膜 在该室的内壁表面上和在其内部的那些暴露的表面上形成有3个O 3和3个O 3 并且具有高耐腐蚀性和绝缘性，并且当将工艺气体引入到半导体晶片的加工表面并扩散到其中时，任何产品较不易于沉积在等离子体产生区域和那些构件上 在房间内举行。

公开(公告)号：US20070264444A1

公开(公告)日：2007-11-15

申请号：US11782013

申请日：2007-07-24

申请人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

发明人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

IPC分类号： C23C16/00 ,  H05H1/24 ,  C23C8/00

CPC分类号： G01N1/24 ,  C23C16/4405 ,  C23C16/4412 ,  G01N15/06 ,  G01N2015/0693 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/68742 ,  Y10T137/8593 ,  Y10T137/87652 ,  Y10T137/8766

摘要： The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

公开(公告)号：US20060011131A1

公开(公告)日：2006-01-19

申请号：US11154944

申请日：2005-06-17

申请人： Hayashi Otsuki ,  Satoru Nogami

发明人： Hayashi Otsuki ,  Satoru Nogami

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C23C16/325

摘要： A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes of the β-Sic csystals to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes Of the β-SiC crystals is 0.15 or above. The SiC material may contain both β-SiC crystals and α-SiC crystals of 6H structure. A base body with a SiC material by a CVD process is used as an internal component member of a semiconductor device fabricating system.

摘要翻译： 通过CVD工艺在基体上形成高耐腐蚀性的SiC材料。 SiC材料包含如此取向的β-SiC晶体，使得β-Sic晶体的（220）和（311）面的x射线衍射的峰值强度之和与x射线衍射的峰值强度之和的比率 对于β-SiC晶体的（111），（200），（220），（311）和（222）面，为0.15以上。 SiC材料可以含有6H结构的β-SiC晶体和α-SiC晶体。 使用通过CVD工艺具有SiC材料的基体作为半导体器件制造系统的内部部件。

公开(公告)号：US06936102B1

公开(公告)日：2005-08-30

申请号：US10048622

申请日：2000-08-02

申请人： Hayashi Otsuki ,  Satoru Nogami

发明人： Hayashi Otsuki ,  Satoru Nogami

IPC分类号： C23C16/32 ,  C30B25/00 ,  C04B35/565

CPC分类号： C23C16/325

摘要： A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes of the β-SiC csystals to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes of the β-Sic crystals is 0.15 or above. The SiC material may contain both β-SiC crystals and α-SiC crystals of 6H structure. A base body with a SiC material by a CVD process is used as an internal component member of a semiconductor device fabricating system.

摘要翻译： 通过CVD工艺在基体上形成高耐腐蚀性的SiC材料。 SiC材料含有如此取向的β-SiC晶体，使得β-SiC晶体的（220）和（311）面的x射线衍射的峰值强度之和与x射线衍射的峰值强度之和的比率 对于β-Sic晶体的（111），（200），（220），（311）和（222）平面为0.15以上。 SiC材料可以含有6H结构的β-SiC晶体和α-SiC晶体。 使用通过CVD工艺具有SiC材料的基体作为半导体器件制造系统的内部部件。

公开(公告)号：US08100147B2

公开(公告)日：2012-01-24

申请号：US11782090

申请日：2007-07-24

申请人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

发明人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

IPC分类号： B01F5/18

CPC分类号： G01N1/24 ,  C23C16/4405 ,  C23C16/4412 ,  G01N15/06 ,  G01N2015/0693 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/68742 ,  Y10T137/8593 ,  Y10T137/87652 ,  Y10T137/8766

摘要： The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

摘要翻译： 本发明提供一种粒子测量系统，其设置在处理系统40中，该处理系统40产生通过真空泵98排出处理室48中的空气或气体而获得的气氛，并将与半导体制造有关的工艺应用于晶片W 附着在排气管90上，排气管90将处理室48的排气口86与真空泵98连接，并测量废气中的颗粒数量及其测量方法，该系统和方法提供处理 系统和清洁方法，其通过基于废气中的颗粒数量确定终点并执行不需要的膜的清洁来终止蚀刻工艺。