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    Semiconductor light receiving element and optical communication device
    23.
    发明授权
    Semiconductor light receiving element and optical communication device 有权
    半导体光接收元件和光通信装置

    公开(公告)号：US08637951B2

    公开(公告)日：2014-01-28

    申请号：US12811863

    申请日：2009-01-09

    申请人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi

    发明人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi

    IPC分类号： H01L31/0232 ,  H01L31/0352 ,  H01L31/0216

    CPC分类号： H01L31/03529 ,  H01L31/02165 ,  Y02E10/50

    摘要： A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer.

    摘要翻译： 半导体光接收元件包括：基板，形成在基板上的第一导电类型的半导体层，形成在第一导电类型的半导体层上的非掺杂半导体光吸收层，第二导电类型的半导体层 形成在非掺杂半导体光吸收层上的导电层和形成在第二导电类型的半导体层上的导电层。 周期排列的多个开口形成在由导电层，第二导电类型的半导体层和非掺杂半导体光吸收层组成的层叠体中。 开口的宽度小于或等于入射光的波长，并且开口穿过导电层和第二导电类型的半导体层以到达非掺杂半导体光吸收层。

    Arm structure
    25.
    发明授权
    Arm structure 有权
    手臂结构

    公开(公告)号：US08324501B2

    公开(公告)日：2012-12-04

    申请号：US12878425

    申请日：2010-09-09

    申请人： Tomoyasu Terada ,  Tsukasa Sekino ,  Mitsunobu Katou ,  Hiroshi Yamashita ,  Daisuke Okamoto ,  Tomoaki Nishimura ,  Motonari Inagaki

    发明人： Tomoyasu Terada ,  Tsukasa Sekino ,  Mitsunobu Katou ,  Hiroshi Yamashita ,  Daisuke Okamoto ,  Tomoaki Nishimura ,  Motonari Inagaki

    IPC分类号： H01B7/00 ,  H02G3/04 ,  B60J5/06

    CPC分类号： B60R16/0215

    摘要： An arm structure includes a first arm pivotally supported on a body, and a second arm pivotally supported on the first arm at an axis portion formed on a distal end side of the first arm. A wire harness fixing portion for fixing a wire harness is provided at a distal end side of the second arm. A guide portion having a curved face for guiding the wire harness is provided at an end portion at an end side of the second arm, the end side being opposite to the distal end side. A width of the guide portion is larger than a width of a portion of the second arm corresponding to the axis portion, in a width direction perpendicular to a longitudinal direction of the second arm.

    摘要翻译： 臂结构包括枢转地支撑在主体上的第一臂和在形成在第一臂的远端侧上的轴部分枢转地支撑在第一臂上的第二臂。 用于固定线束的线束固定部分设置在第二臂的远端侧。 具有用于引导线束的弯曲面的引导部设置在第二臂的端侧的端部，其端侧与前端侧相对。 在与第二臂的长度方向垂直的宽度方向上，引导部的宽度比第二臂的与轴部对应的部分的宽度大。

    SiGe photodiode
    26.
    发明授权
    SiGe photodiode 有权
    SiGe光电二极管

    公开(公告)号：US08269303B2

    公开(公告)日：2012-09-18

    申请号：US12919638

    申请日：2009-03-09

    申请人： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

    发明人： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

    IPC分类号： H01L31/105

    CPC分类号： H01L31/105 ,  G02B6/12004 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

    摘要： The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.

    摘要翻译： Ge层与Si层之间的晶格失配大至4％左右。 因此，当Ge层在Si层上生长时，引入穿透位错以在p-i-n结处引起漏电流。 因此，光检测灵敏度降低，并且元件的可靠性也降低。 此外，在与Si波导的连接中，还存在由于Si和Ge之间的折射率的差异以及由金属电极引起的吸收损耗的反射损耗的问题。 为了解决所述问题，根据本发明，提供了一种垂直型pin-SiGe光电二极管，其具有嵌入到形成在Si层的一部分中的凹槽中的结构，其中p型或n- 在沟槽的下部形成有型掺杂层，其中在通过层叠i-Si层和SiGe缓冲层而形成的层叠结构上形成具有矩形或倒锥形的i-SiGe层 凹槽的下部和侧壁。 此外，在具有Si波导的光学连接部中，通过由i-Si层和SiGe缓冲层构成的层叠结构实现阻抗匹配，并且将上部金属层与其分离，使得多Si桥结构 用于将上部金属层电连接到其上。

    OPTICAL PHASE MODULATION ELEMENT AND OPTICAL MODULATOR USING THE SAME
    28.
    发明申请
    OPTICAL PHASE MODULATION ELEMENT AND OPTICAL MODULATOR USING THE SAME 有权
    光学相位调制元件和光学调制器

    公开(公告)号：US20100316325A1

    公开(公告)日：2010-12-16

    申请号：US12526107

    申请日：2007-12-25

    申请人： Daisuke Okamoto ,  Masafumi Nakada ,  Junichi Fujikata

    发明人： Daisuke Okamoto ,  Masafumi Nakada ,  Junichi Fujikata

    IPC分类号： G02F1/035

    CPC分类号： G02B6/1226 ,  B82Y20/00 ,  G02B6/12007 ,  G02F1/015 ,  G02F1/025 ,  G02F2202/20 ,  G02F2203/10 ,  G02F2203/50

    摘要： Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength and a core formed by a dielectric metal material having a complex dielectric constant having a positive real part in the used wavelength. The Plasmon waveguide is connected to an optical waveguide including a clad and a core both having a complex dielectric constant having a positive real part. The core of the Plasmon waveguide and the core of the optical waveguide are formed, at least partially, of the same semiconductor material. The Plasmon waveguide has a function to phase-modulate the incident light when voltage is applied.

    摘要翻译： 提供了一种小尺寸光相位调制元件和使用它的光调制器。 光学相位调制元件包括具有由金属材料制成的包层的等离子体波导，所述金属材料具有在所使用的波长中具有负实部的复介电常数和由具有正实部的复介电常数的介电金属材料形成的芯 在使用的波长。 等离子体波导连接到包括具有正实部的复介电常数的包层和芯的光波导。 至少部分地由相同的半导体材料形成等离子体波导的核心和光波导的核心。 等离子体波导具有在施加电压时对入射光进行相位调制的功能。

    Photodetector, optical communication device equipped with the same, method for making of photodetector, and method for making of optical communication device
    30.
    发明授权
    Photodetector, optical communication device equipped with the same, method for making of photodetector, and method for making of optical communication device 有权
    光检测器，配备该光通信装置的光通信装置的制造方法以及光通信装置的制造方法

    公开(公告)号：US08853812B2

    公开(公告)日：2014-10-07

    申请号：US13810360

    申请日：2011-06-15

    申请人： Daisuke Okamoto ,  Junichi Fujikata

    发明人： Daisuke Okamoto ,  Junichi Fujikata

    IPC分类号： H01L31/036 ,  H01L31/105 ,  H01L21/205 ,  H01L31/103 ,  G02F1/00 ,  G02B6/12 ,  G02B6/42

    CPC分类号： G02B6/12004 ,  G02B6/4214 ,  G02B6/4246 ,  G02F1/00 ,  H01L31/1035 ,  H01L31/105 ,  H01L31/1085

    摘要： The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.

    摘要翻译： 本发明提供了一种解决光电检测器的灵敏度低的问题的光检测器，配备该光检测器的光通信装置及其制造方法，以及制造该光通信装置的方法。 该光检测器包括基板，布置在基板上的下包覆层，布置在下包层上的光波导，布置在光波导上的中间层，布置在中间层上的光吸收层，一对电极， 所述光吸收层，其中所述光吸收层包括IV族或III-V族单晶半导体，并且所述光吸收层吸收通过所述光波导传播的光信号。