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    Difference amplifier
    28.
    发明授权
    Difference amplifier 失效
    差分放大器

    公开(公告)号：US3671772A

    公开(公告)日：1972-06-20

    申请号：US3671772D

    申请日：1969-10-01

    Applicant: IBM

    Inventor： HENLE ROBERT A

    IPC: H03F3/45 ,  G11C7/00 ,  G11C7/06 ,  G11C11/06 ,  G11C11/404 ,  G11C11/4091 ,  H03K5/02 ,  H03K3/26

    CPC classification number: H03K5/02 ,  G11C7/065 ,  G11C11/06007 ,  G11C11/404 ,  G11C11/4091

    Abstract: A difference amplifier used as a sense amplifier for stored binary data being read from a computer memory. The amplifier includes a pair of cross-coupled transistors, a power source providing an operating voltage for said transistors, and means for intermittently applying said power source to the crosscoupled transistors. Selective application means apply each of the pair of voltage signals to be differentiated from each other to a respective one of the pair of cross-couplings, i.e., the pair of cross-connected regions in the transistors. In the case of reading from binary storage, the voltage signals are applied from the pair of sense lines from the memory storage. The signals are applied during a period when the voltage source is not being applied and, consequently, both of the paired transistors are in the non-conductive state. The signals establish a stored charge in each of the transistors; the difference between these charges will determine which of the transistors assumes the conductive state when the power is subsequently applied.

    Abstract translation: 用于从计算机存储器读取存储的二进制数据的读出放大器的差分放大器。 放大器包括一对交叉耦合晶体管，为所述晶体管提供工作电压的电源，以及用于将所述电源间歇地施加到交叉耦合晶体管的装置。 选择性应用装置将要彼此差分的一对电压信号中的每一个施加到该对交叉耦合中的相应一个，即晶体管中的一对交叉连接区域中。 在从二进制存储器读取的情况下，从存储器存储器的一对感测线路施加电压信号。 在不施加电压源的期间施加信号，因此，两个成对的晶体管都处于非导通状态。 信号在每个晶体管中建立存储的电荷; 当随后施加功率时，这些电荷之间的差异将决定哪个晶体管呈现导通状态。

    Write once read only store semiconductor memory
    29.
    发明授权
    Write once read only store semiconductor memory 失效
    写入只读存储半导体存储器

    公开(公告)号：US3641516A

    公开(公告)日：1972-02-08

    申请号：US3641516D

    申请日：1969-09-15

    Applicant: IBM

    Inventor： CASTRUCCI PAUL P ,  GATES HARLAN R ,  HENLE ROBERT A ,  PRICER WILBUR DAVID ,  MORTON ROBERT M ,  MASON JOHN W ,  NORTH WILLIAM D

    IPC: F22B21/06 ,  G11C17/06 ,  G11C17/14 ,  G11C17/16 ,  H01L23/525 ,  H01L27/00 ,  H01L27/102 ,  G11C11/36 ,  G11C17/00

    CPC classification number: H01L27/1021 ,  F22B21/065 ,  G11C17/06 ,  G11C17/16 ,  H01L23/525 ,  H01L27/00 ,  H01L2924/0002 ,  Y10S148/055 ,  Y10S257/926 ,  H01L2924/00

    Abstract: A read only memory having the capability of being written into once after manufacture. The cells of the memory are capable of being fused or permanently altered by directing a fusing current to the selected cells. The cell is a monolithic semiconductor device comprising a diode to be biased in a forward direction and a diode to be biased in the reverse direction structured so as to form back-to-back diodes. The reverse diode has a lower reverse breakdown voltage than the forward diode, and a metal connection, unconnected to any remaining circuit elements contacts the semiconductor device between diode junctions. The fusing current causes a metal-semiconductor alloy to form and short out the reverse diode.

    Abstract translation: 一种只读存储器，具有在制造后被写入一次的能力。 存储器的单元能够通过将熔化电流引导到所选择的单元来融合或永久地改变。 电池是一个单片半导体器件，它包括一个正向偏置的二极管和一个反向偏置的二极管，以便形成背对背二极管。 反向二极管具有比正向二极管更低的反向击穿电压，并且未连接到任何剩余的电路元件的金属连接接触二极管接头之间的半导体器件。 熔断电流使金属半导体合金形成并短路反向二极管。

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