公开(公告)号：US11926521B2

公开(公告)日：2024-03-12

申请号：US17150527

申请日：2021-01-15

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Carsten Ahrens ,  Stefan Jost ,  Ulrich Krumbein ,  Matthias Reinwald

IPC: B81B7/00 ,  B81C1/00 ,  G01N29/24 ,  G01N33/00

CPC classification number: B81B7/0067 ,  B81C1/00317 ,  G01N29/2418 ,  G01N33/0027 ,  B81B2201/0214 ,  B81B2203/0127 ,  B81B2207/095

Abstract: An infrared emitter with a glass lid for emitting infrared radiation comprises a package enclosing a cavity, wherein a first part is transparent for infrared radiation and a second part comprises a glass material and a heating structure configured for emitting the infrared radiation, wherein the heating structure is arranged in the cavity between the first part and the second part of the package.

公开(公告)号：US11608265B2

公开(公告)日：2023-03-21

申请号：US17357234

申请日：2021-06-24

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Carsten Ahrens ,  Stefan Jost ,  Ulrich Krumbein

IPC: B81C1/00 ,  B81B3/00

Abstract: A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.

公开(公告)号：US10575101B2

公开(公告)日：2020-02-25

申请号：US15897946

申请日：2018-02-15

Applicant: Infineon Technologies AG

Inventor： Arnaud Walther ,  Alfons Dehe ,  Gerhard Metzger-Brueckl ,  Johann Strasser ,  Carsten Ahrens

IPC: H04R19/04 ,  B81B3/00 ,  B81C1/00 ,  H04R31/00 ,  H04R19/00

Abstract: A microelectromechanical microphone includes a reference electrode, a first membrane arranged on a first side of the reference electrode and displaceable by sound to be detected, and a second membrane arranged on a second side of the reference electrode, said second side being situated opposite the first side of the reference electrode, and displaceable by sound to be detected. A region of one from the first and second membranes that is displaceable by sound relative to the reference electrode, independently of said region's position relative to the reference electrode, can comprise a planar section and also an undulatory section adjoining the planar section and arranged in a region of overlap one of the first membrane or the second membrane with the other one of the first membrane and or the second membrane.

公开(公告)号：US20200028504A1

公开(公告)日：2020-01-23

申请号：US16506343

申请日：2019-07-09

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Carsten Ahrens ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher

IPC: H03K17/06

Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.

公开(公告)号：US20180294790A1

公开(公告)日：2018-10-11

申请号：US15934387

申请日：2018-03-23

Applicant: Infineon Technologies AG

Inventor： Hans-Joerg Timme ,  Carsten Ahrens ,  Ruediger Bauder

IPC: H03H3/02 ,  H03H9/58

Abstract: Methods for manufacturing resonator structures and corresponding resonator structures are described. A first wafer including a first piezoelectric material is singulated and bonded to a second wafer.

公开(公告)号：US20180234774A1

公开(公告)日：2018-08-16

申请号：US15897946

申请日：2018-02-15

Applicant: Infineon Technologies AG

Inventor： Arnaud Walther ,  Alfons Dehe ,  Gerhard Metzger-Brueckl ,  Johann Strasser ,  Carsten Ahrens

IPC: H04R19/04 ,  B81B3/00 ,  B81C1/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: H04R19/04 ,  B81B3/001 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81B2203/04 ,  B81C1/00182 ,  H04R19/005 ,  H04R31/003 ,  H04R2201/003

Abstract: A microelectromechanical microphone includes a reference electrode, a first membrane arranged on a first side of the reference electrode and displaceable by sound to be detected, and a second membrane arranged on a second side of the reference electrode, said second side being situated opposite the first side of the reference electrode, and displaceable by sound to be detected. A region of one from the first and second membranes that is displaceable by sound relative to the reference electrode, independently of said region's position relative to the reference electrode, can comprise a planar section and also an undulatory section adjoining the planar section and arranged in a region of overlap one of the first membrane or the second membrane with the other one of the first membrane and or the second membrane.

公开(公告)号：US20180201504A1

公开(公告)日：2018-07-19

申请号：US15923599

申请日：2018-03-16

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stephan Pindl ,  Bernhard Knott ,  Carsten Ahrens

IPC: B81C1/00 ,  H04R31/00 ,  H04R19/00 ,  H04R19/04

CPC classification number: B81C1/00825 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00873 ,  B81C2201/017 ,  B81C2201/053 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

公开(公告)号：US09938140B2

公开(公告)日：2018-04-10

申请号：US15206836

申请日：2016-07-11

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stephan Pindl ,  Bernhard Knott ,  Carsten Ahrens

IPC: B81C1/00 ,  H04R19/04 ,  H04R19/00 ,  H04R31/00

CPC classification number: B81C1/00825 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00873 ,  B81C2201/017 ,  B81C2201/053 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

公开(公告)号：US20170076961A1

公开(公告)日：2017-03-16

申请号：US15361108

申请日：2016-11-25

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Andre Schmenn ,  Damian Sojka ,  Isabella Goetz ,  Gudrun Stranzl ,  Sebastian Werner ,  Thomas Fischer ,  Carsten Ahrens ,  Edward Fuergut

IPC: H01L21/56 ,  H01L27/02 ,  H01L23/498 ,  H01L21/78 ,  H01L23/31

CPC classification number: H01L21/561 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/49838 ,  H01L27/0248 ,  H01L27/0255 ,  H01L29/861 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/00

Abstract: An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.

Abstract translation: 提供了一种安排。 该布置可以包括：具有前侧和后侧的基板，基板内的管芯区域，限定管芯区域的背面的多用途层以及设置在多用途层之间的蚀刻停止层， 多用途层和背面。 多用途层可以由欧姆材料形成，并且蚀刻停止层可以是第一掺杂浓度的第一导电类型。

公开(公告)号：US09363609B2

公开(公告)日：2016-06-07

申请号：US14044654

申请日：2013-10-02

Applicant: Infineon Technologies AG

Inventor： Wolfgang Friza ,  Thomas Grille ,  Klaus Muemmler ,  Guenter Ziegler ,  Carsten Ahrens

IPC: H01L29/00 ,  H04R23/00 ,  B81C1/00 ,  G01L9/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: H04R23/00 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00936 ,  B81C2201/0109 ,  G01L9/0042 ,  H04R19/005 ,  H04R31/006

Abstract: Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.